{"id":"https://openalex.org/W4410394662","doi":"https://doi.org/10.1109/irps48204.2025.10983851","title":"Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs","display_name":"Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETs","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410394662","doi":"https://doi.org/10.1109/irps48204.2025.10983851"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10983851","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983851","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5007746953","display_name":"R. Asanovski","orcid":"https://orcid.org/0000-0001-7127-6184"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"R. Asanovski","raw_affiliation_strings":["imec,Leuven,Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052618332","display_name":"H. Arimura","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"H. Arimura","raw_affiliation_strings":["imec,Leuven,Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000520516","display_name":"Jhuma Ganguly","orcid":"https://orcid.org/0000-0001-5119-6144"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"J. Ganguly","raw_affiliation_strings":["imec,Leuven,Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033037232","display_name":"Pierpaolo Palestri","orcid":"https://orcid.org/0000-0002-1672-1166"},"institutions":[{"id":"https://openalex.org/I122346577","display_name":"University of Modena and Reggio Emilia","ror":"https://ror.org/02d4c4y02","country_code":"IT","type":"education","lineage":["https://openalex.org/I122346577"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"P. Palestri","raw_affiliation_strings":["Universit&#x00E0; degli Studi di Modena e Reggio Emilia,Modena,Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universit&#x00E0; degli Studi di Modena e Reggio Emilia,Modena,Italy","institution_ids":["https://openalex.org/I122346577"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051359840","display_name":"Alexander Grill","orcid":"https://orcid.org/0000-0003-1615-1033"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"A. Grill","raw_affiliation_strings":["imec,Leuven,Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107405723","display_name":"B. Kaczer","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"B. Kaczer","raw_affiliation_strings":["imec,Leuven,Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065113949","display_name":"Naoto Horiguchi","orcid":"https://orcid.org/0000-0001-5490-0416"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"N. Horiguchi","raw_affiliation_strings":["imec,Leuven,Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033649205","display_name":"Lidia Selmi","orcid":null},"institutions":[{"id":"https://openalex.org/I122346577","display_name":"University of Modena and Reggio Emilia","ror":"https://ror.org/02d4c4y02","country_code":"IT","type":"education","lineage":["https://openalex.org/I122346577"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"L. Selmi","raw_affiliation_strings":["Universit&#x00E0; degli Studi di Modena e Reggio Emilia,Modena,Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universit&#x00E0; degli Studi di Modena e Reggio Emilia,Modena,Italy","institution_ids":["https://openalex.org/I122346577"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5068577719","display_name":"J. Franco","orcid":"https://orcid.org/0000-0002-7382-8605"},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"J. Franco","raw_affiliation_strings":["imec,Leuven,Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"imec,Leuven,Belgium","institution_ids":["https://openalex.org/I4210114974"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":9,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.5352,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.65836422,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.6346837282180786},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5522933006286621},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5197384357452393},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.49735787510871887},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.49178531765937805},{"id":"https://openalex.org/keywords/work-function","display_name":"Work function","score":0.4748300015926361},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.46009036898612976},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4077121913433075},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.2891039252281189},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.24579203128814697},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18217134475708008},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.17245203256607056},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.14507395029067993},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0793580412864685},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.05575522780418396},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.05550581216812134}],"concepts":[{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.6346837282180786},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5522933006286621},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5197384357452393},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.49735787510871887},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.49178531765937805},{"id":"https://openalex.org/C115235246","wikidata":"https://www.wikidata.org/wiki/Q783800","display_name":"Work function","level":3,"score":0.4748300015926361},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.46009036898612976},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4077121913433075},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.2891039252281189},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.24579203128814697},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18217134475708008},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.17245203256607056},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.14507395029067993},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0793580412864685},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.05575522780418396},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.05550581216812134},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps48204.2025.10983851","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983851","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:iris.unimore.it:11380/1378948","is_oa":false,"landing_page_url":"https://hdl.handle.net/11380/1378948","pdf_url":null,"source":{"id":"https://openalex.org/S4306400718","display_name":"IRIS UNIMORE (University of Modena and Reggio Emilia)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I122346577","host_organization_name":"University of Modena and Reggio Emilia","host_organization_lineage":["https://openalex.org/I122346577"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1972409839","https://openalex.org/W2035374584","https://openalex.org/W2076468286","https://openalex.org/W2084199425","https://openalex.org/W2097061230","https://openalex.org/W2128428769","https://openalex.org/W2144935111","https://openalex.org/W2149229127","https://openalex.org/W2280456807","https://openalex.org/W2330049606","https://openalex.org/W2755984005","https://openalex.org/W2786278916","https://openalex.org/W2791653589","https://openalex.org/W2946534967","https://openalex.org/W3006249588","https://openalex.org/W3111607930","https://openalex.org/W3194971064","https://openalex.org/W4212867390","https://openalex.org/W4224124454","https://openalex.org/W4317794554","https://openalex.org/W4387011135","https://openalex.org/W4391021607","https://openalex.org/W4393960771","https://openalex.org/W4396949761","https://openalex.org/W4407693593"],"related_works":["https://openalex.org/W2369525038","https://openalex.org/W2811342899","https://openalex.org/W1984159254","https://openalex.org/W2467475793","https://openalex.org/W1604674423","https://openalex.org/W2114948497","https://openalex.org/W3156355944","https://openalex.org/W2143757641","https://openalex.org/W2129167813","https://openalex.org/W2545530459"],"abstract_inverted_index":{"This":[0],"study":[1],"explores":[2],"how":[3],"gate":[4,22,55,71,107],"metal":[5,23,56,108],"work":[6,109],"function":[7,110],"affects":[8],"1/f":[9],"noise":[10,58,63,80],"in":[11,59,81],"Replacement":[12],"Metal":[13],"Gate":[14],"(RMG)":[15],"MOSFETs.":[16],"In":[17],"particular,":[18],"we":[19],"investigate":[20],"various":[21],"stacks":[24],"and":[25],"assess":[26],"the":[27,62,70,93,106],"influence":[28],"of":[29,64,105],"several":[30],"defect":[31,74,95],"passivation":[32,75,96],"techniques,":[33],"including":[34],"novel":[35],"ones":[36],"developed":[37],"for":[38,118],"low":[39],"thermal":[40],"budget":[41],"(<tex":[42],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[43,84],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$T$</tex>":[44],"<450\u00b0C)":[45],"RMG":[46],"fabrication.":[47],"We":[48],"find":[49],"that":[50],"using":[51],"a":[52],"TiN":[53],"p-type":[54],"increases":[57],"nMOSFETs,":[60,86],"while":[61],"pMOSFETs":[65],"is":[66],"largely":[67],"unaffected":[68],"by":[69],"metal.":[72],"Various":[73],"methods":[76],"fail":[77],"to":[78,89],"reduce":[79],"high":[82],"V<inf":[83],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</inf>":[85],"likely":[87],"due":[88],"surface":[90],"potential":[91],"affecting":[92],"interface":[94],"efficiency":[97],"during":[98],"post-metallization":[99],"annealing.":[100],"Experiments":[101],"with":[102],"gradual":[103],"modulation":[104],"further":[111],"support":[112],"this":[113],"hypothesis,":[114],"offering":[115],"new":[116],"insights":[117],"process":[119],"integration.":[120]},"counts_by_year":[{"year":2026,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}