{"id":"https://openalex.org/W4410395117","doi":"https://doi.org/10.1109/irps48204.2025.10983694","title":"Investigation of Screening Methods for 1.2 kV 4H-SiC MOSFETs Using High Gate Voltage Pulses and Unclampled Inductive Switching","display_name":"Investigation of Screening Methods for 1.2 kV 4H-SiC MOSFETs Using High Gate Voltage Pulses and Unclampled Inductive Switching","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410395117","doi":"https://doi.org/10.1109/irps48204.2025.10983694"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10983694","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983694","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101405544","display_name":"Seung Yup Jang","orcid":"https://orcid.org/0000-0002-2202-8800"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Seung Yup Jang","raw_affiliation_strings":["NoMIS Power Corporation Albany,New York,USA"],"affiliations":[{"raw_affiliation_string":"NoMIS Power Corporation Albany,New York,USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037088031","display_name":"Justin Lynch","orcid":"https://orcid.org/0000-0001-8497-9954"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Justin Lynch","raw_affiliation_strings":["NoMIS Power Corporation Albany,New York,USA"],"affiliations":[{"raw_affiliation_string":"NoMIS Power Corporation Albany,New York,USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080969197","display_name":"Adam J. Morgan","orcid":"https://orcid.org/0000-0002-8330-4792"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Adam J. Morgan","raw_affiliation_strings":["NoMIS Power Corporation Albany,New York,USA"],"affiliations":[{"raw_affiliation_string":"NoMIS Power Corporation Albany,New York,USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5115026945","display_name":"Dinuth C. Y. B. Yapa Mudiyanselage","orcid":null},"institutions":[{"id":"https://openalex.org/I392282","display_name":"University at Albany, State University of New York","ror":"https://ror.org/012zs8222","country_code":"US","type":"education","lineage":["https://openalex.org/I392282"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dinuth C. Y. B. Yapa Mudiyanselage","raw_affiliation_strings":["College of Nanotechnology Science and Engineering, University at Albany,Albany,New York,USA"],"affiliations":[{"raw_affiliation_string":"College of Nanotechnology Science and Engineering, University at Albany,Albany,New York,USA","institution_ids":["https://openalex.org/I392282"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072043921","display_name":"Woongje Sung","orcid":"https://orcid.org/0000-0003-0960-5973"},"institutions":[{"id":"https://openalex.org/I392282","display_name":"University at Albany, State University of New York","ror":"https://ror.org/012zs8222","country_code":"US","type":"education","lineage":["https://openalex.org/I392282"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Woongje Sung","raw_affiliation_strings":["College of Nanotechnology Science and Engineering, University at Albany,Albany,New York,USA"],"affiliations":[{"raw_affiliation_string":"College of Nanotechnology Science and Engineering, University at Albany,Albany,New York,USA","institution_ids":["https://openalex.org/I392282"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079950801","display_name":"Limeng Shi","orcid":null},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Limeng Shi","raw_affiliation_strings":["The Ohio State University,Department of Electrical & Computer Engineering,Columbus,Ohio,USA"],"affiliations":[{"raw_affiliation_string":"The Ohio State University,Department of Electrical & Computer Engineering,Columbus,Ohio,USA","institution_ids":["https://openalex.org/I52357470"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5060123137","display_name":"Anant Agarwal","orcid":"https://orcid.org/0000-0003-0228-8039"},"institutions":[{"id":"https://openalex.org/I52357470","display_name":"The Ohio State University","ror":"https://ror.org/00rs6vg23","country_code":"US","type":"education","lineage":["https://openalex.org/I52357470"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Anant K. Agarwal","raw_affiliation_strings":["The Ohio State University,Department of Electrical & Computer Engineering,Columbus,Ohio,USA"],"affiliations":[{"raw_affiliation_string":"The Ohio State University,Department of Electrical & Computer Engineering,Columbus,Ohio,USA","institution_ids":["https://openalex.org/I52357470"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5101405544"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10802007,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.9957000017166138,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12898","display_name":"Induction Heating and Inverter Technology","score":0.9926000237464905,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.649285078048706},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.628080427646637},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.6062207221984863},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5912337899208069},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.580337643623352},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4966745972633362},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4446036219596863},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.43845292925834656},{"id":"https://openalex.org/keywords/gate-voltage","display_name":"Gate voltage","score":0.4186607003211975},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.33980217576026917},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2222883403301239},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19130155444145203}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.649285078048706},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.628080427646637},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.6062207221984863},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5912337899208069},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.580337643623352},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4966745972633362},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4446036219596863},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.43845292925834656},{"id":"https://openalex.org/C2984119601","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Gate voltage","level":4,"score":0.4186607003211975},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33980217576026917},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2222883403301239},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19130155444145203},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48204.2025.10983694","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983694","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5600000023841858}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2517882799","https://openalex.org/W2569142040","https://openalex.org/W3040603639","https://openalex.org/W3157629010","https://openalex.org/W3158160418","https://openalex.org/W3159859197","https://openalex.org/W4223585602","https://openalex.org/W4376606758","https://openalex.org/W4391491907","https://openalex.org/W4391603700","https://openalex.org/W4396949300","https://openalex.org/W6791761946"],"related_works":["https://openalex.org/W2965295431","https://openalex.org/W2254931227","https://openalex.org/W4319440797","https://openalex.org/W2885194652","https://openalex.org/W2366088579","https://openalex.org/W2225406648","https://openalex.org/W2117239775","https://openalex.org/W2386785728","https://openalex.org/W2966234605","https://openalex.org/W3190489116"],"abstract_inverted_index":{"This":[0],"study":[1],"investigates":[2],"the":[3],"effectiveness":[4],"of":[5,57],"high":[6,46],"gate":[7,22,47],"voltage":[8,48],"pulse":[9],"(HVP)":[10],"stress":[11,49],"and":[12,38,71],"unclamped":[13],"inductive":[14],"switching":[15],"(UIS)":[16],"tests":[17],"in":[18,25,52],"screening":[19,40,58,69],"out":[20,83],"infant":[21,54],"oxide":[23],"failures":[24],"1.2":[26],"kV":[27],"SiC":[28],"MOSFETs.":[29],"Foundry-fabricated":[30],"pristine":[31],"devices":[32,63],"were":[33],"systematically":[34],"tested":[35],"using":[36],"HVP":[37],"UIS":[39],"conditions":[41],"at":[42],"room":[43],"temperature.":[44],"Short-duration":[45],"proved":[50],"effective":[51],"identifying":[53],"failures.":[55],"Analysis":[56],"results":[59],"from":[60],"over":[61],"4,000":[62],"revealed":[64],"a":[65],"strong":[66],"correlation":[67],"between":[68],"rates":[70],"drain":[72,77],"leakage,":[73],"suggesting":[74],"that":[75],"stringent":[76],"leakage":[78],"criteria":[79],"can":[80],"help":[81],"rule":[82],"potentially":[84],"weak":[85],"devices.":[86]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}