{"id":"https://openalex.org/W4410394245","doi":"https://doi.org/10.1109/irps48204.2025.10983620","title":"Multiscale Modeling and Calibration of Hot-Carrier Stress Degradation in SiGe DRAM Peripheral MOSFETs","display_name":"Multiscale Modeling and Calibration of Hot-Carrier Stress Degradation in SiGe DRAM Peripheral MOSFETs","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410394245","doi":"https://doi.org/10.1109/irps48204.2025.10983620"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10983620","doi":"https://doi.org/10.1109/irps48204.2025.10983620","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983620","pdf_url":null,"source":{"id":"https://openalex.org/S4210238090","display_name":"IEEE International Reliability Physics Symposium proceedings","issn_l":"0735-0791","issn":["0735-0791","1541-7026","1938-1891"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"L. Silvestri","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1335490905","display_name":"Synopsys (Switzerland)","ror":"https://ror.org/03mb54f81","country_code":"CH","type":"company","lineage":["https://openalex.org/I1335490905","https://openalex.org/I4210088951"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"L. Silvestri","raw_affiliation_strings":["Synopsys Switzerland LLC,Zurich,Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Synopsys Switzerland LLC,Zurich,Switzerland","institution_ids":["https://openalex.org/I1335490905"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071860796","display_name":"Soo\u2010Min Jin","orcid":"https://orcid.org/0000-0002-6283-9958","observed_orcids":["https://orcid.org/0000-0002-6283-9958"]},"institutions":[{"id":"https://openalex.org/I4405272917","display_name":"SK Hynix (South Korea)","ror":"https://ror.org/04z2p0w98","country_code":"KR","type":"company","lineage":["https://openalex.org/I4405272917"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Jin","raw_affiliation_strings":["SK hynix Inc.,Icheon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Republic of Korea","institution_ids":["https://openalex.org/I4405272917"]}]},{"author_position":"middle","author":{"id":null,"display_name":"W. Jeong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405272917","display_name":"SK Hynix (South Korea)","ror":"https://ror.org/04z2p0w98","country_code":"KR","type":"company","lineage":["https://openalex.org/I4405272917"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"W. Jeong","raw_affiliation_strings":["SK hynix Inc.,Icheon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Republic of Korea","institution_ids":["https://openalex.org/I4405272917"]}]},{"author_position":"middle","author":{"id":null,"display_name":"H. Shim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405272917","display_name":"SK Hynix (South Korea)","ror":"https://ror.org/04z2p0w98","country_code":"KR","type":"company","lineage":["https://openalex.org/I4405272917"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"H. Shim","raw_affiliation_strings":["SK hynix Inc.,Icheon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Republic of Korea","institution_ids":["https://openalex.org/I4405272917"]}]},{"author_position":"middle","author":{"id":null,"display_name":"W. Yim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405272917","display_name":"SK Hynix (South Korea)","ror":"https://ror.org/04z2p0w98","country_code":"KR","type":"company","lineage":["https://openalex.org/I4405272917"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"W. Yim","raw_affiliation_strings":["SK hynix Inc.,Icheon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Republic of Korea","institution_ids":["https://openalex.org/I4405272917"]}]},{"author_position":"middle","author":{"id":null,"display_name":"H. Kwon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405272917","display_name":"SK Hynix (South Korea)","ror":"https://ror.org/04z2p0w98","country_code":"KR","type":"company","lineage":["https://openalex.org/I4405272917"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"H. Kwon","raw_affiliation_strings":["SK hynix Inc.,Icheon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Republic of Korea","institution_ids":["https://openalex.org/I4405272917"]}]},{"author_position":"middle","author":{"id":null,"display_name":"D. Oh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405272917","display_name":"SK Hynix (South Korea)","ror":"https://ror.org/04z2p0w98","country_code":"KR","type":"company","lineage":["https://openalex.org/I4405272917"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"D. Oh","raw_affiliation_strings":["SK hynix Inc.,Icheon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Republic of Korea","institution_ids":["https://openalex.org/I4405272917"]}]},{"author_position":"middle","author":{"id":null,"display_name":"S. Son","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405272917","display_name":"SK Hynix (South Korea)","ror":"https://ror.org/04z2p0w98","country_code":"KR","type":"company","lineage":["https://openalex.org/I4405272917"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Son","raw_affiliation_strings":["SK hynix Inc.,Icheon,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SK hynix Inc.,Icheon,Republic of Korea","institution_ids":["https://openalex.org/I4405272917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012061356","display_name":"Nikolas Zographos","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1335490905","display_name":"Synopsys (Switzerland)","ror":"https://ror.org/03mb54f81","country_code":"CH","type":"company","lineage":["https://openalex.org/I1335490905","https://openalex.org/I4210088951"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"N. Zographos","raw_affiliation_strings":["Synopsys Switzerland LLC,Zurich,Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Synopsys Switzerland LLC,Zurich,Switzerland","institution_ids":["https://openalex.org/I1335490905"]}]},{"author_position":"middle","author":{"id":null,"display_name":"N. Kim","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"N. Kim","raw_affiliation_strings":["Synopsys Korea Inc.,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Synopsys Korea Inc.,Gyeonggi-do,Republic of Korea","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026114830","display_name":"Xi\u2013Wei Lin","orcid":"https://orcid.org/0000-0003-0098-0638","observed_orcids":["https://orcid.org/0000-0003-0098-0638"]},"institutions":[{"id":"https://openalex.org/I4210088951","display_name":"Synopsys (United States)","ror":"https://ror.org/013by2m91","country_code":"US","type":"company","lineage":["https://openalex.org/I4210088951"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"X.-W. Lin","raw_affiliation_strings":["Synopsys Inc.,Sunnyvale,CA,USA,94085"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Synopsys Inc.,Sunnyvale,CA,USA,94085","institution_ids":["https://openalex.org/I4210088951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110244778","display_name":"Louis Sponton","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1335490905","display_name":"Synopsys (Switzerland)","ror":"https://ror.org/03mb54f81","country_code":"CH","type":"company","lineage":["https://openalex.org/I1335490905","https://openalex.org/I4210088951"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"L. Sponton","raw_affiliation_strings":["Synopsys Switzerland LLC,Zurich,Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Synopsys Switzerland LLC,Zurich,Switzerland","institution_ids":["https://openalex.org/I1335490905"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5012676193","display_name":"Youngseok Lee","orcid":"https://orcid.org/0000-0003-0900-166X","observed_orcids":["https://orcid.org/0000-0003-0900-166X"]},"institutions":[{"id":"https://openalex.org/I1335490905","display_name":"Synopsys (Switzerland)","ror":"https://ror.org/03mb54f81","country_code":"CH","type":"company","lineage":["https://openalex.org/I1335490905","https://openalex.org/I4210088951"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Y. Lee","raw_affiliation_strings":["Synopsys Switzerland LLC,Zurich,Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Synopsys Switzerland LLC,Zurich,Switzerland","institution_ids":["https://openalex.org/I1335490905"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.08303695,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.573199987411499,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.573199987411499,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.39750000834465027,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.005799999926239252,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sige-mosfet","display_name":"SiGe MOSFET","score":0.9309999942779541},{"id":"https://openalex.org/keywords/multiscale-modeling","display_name":"multiscale modeling","score":0.8220000267028809},{"id":"https://openalex.org/keywords/first-principles-calculations","display_name":"first-principles calculations","score":0.6430000066757202},{"id":"https://openalex.org/keywords/spherical-harmonics-expansion","display_name":"spherical harmonic expansion","score":0.8859999775886536},{"id":"https://openalex.org/keywords/boltzmann-equation","display_name":"Boltzmann equation","score":0.9990000128746033},{"id":"https://openalex.org/keywords/device-reliability","display_name":"device reliability","score":0.597000002861023}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7500985860824585},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6853832006454468},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6700491309165955},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6002018451690674},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.5669553279876709},{"id":"https://openalex.org/C165838908","wikidata":"https://www.wikidata.org/wiki/Q736777","display_name":"Calibration","level":2,"score":0.5570013523101807},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.523023784160614},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.45009076595306396},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21296542882919312},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15957379341125488},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1217711865901947},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1110820472240448},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48204.2025.10983620","doi":"https://doi.org/10.1109/irps48204.2025.10983620","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983620","pdf_url":null,"source":{"id":"https://openalex.org/S4210238090","display_name":"IEEE International Reliability Physics Symposium proceedings","issn_l":"0735-0791","issn":["0735-0791","1541-7026","1938-1891"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[{"id":"https://metadata.un.org/sdg/13","score":0.6899999976158142,"display_name":"Climate action"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W16528636","https://openalex.org/W1994350206","https://openalex.org/W2021373668","https://openalex.org/W2029347203","https://openalex.org/W2039508508","https://openalex.org/W2064404588","https://openalex.org/W2128923591","https://openalex.org/W2137096648","https://openalex.org/W2164546751","https://openalex.org/W2289750143","https://openalex.org/W2311120308","https://openalex.org/W2895705225","https://openalex.org/W2944119246","https://openalex.org/W2946479584"],"related_works":["https://openalex.org/W3120961607","https://openalex.org/W4401568740","https://openalex.org/W3148568549","https://openalex.org/W2098207691","https://openalex.org/W1648516568","https://openalex.org/W361036515","https://openalex.org/W2161286015","https://openalex.org/W2269474412","https://openalex.org/W2433923775","https://openalex.org/W2621126165"],"abstract_inverted_index":{"A":[0],"new":[1],"multiscale":[2],"simulation":[3],"flow":[4],"for":[5,34,61],"hot-carrier":[6],"stress":[7],"(HCS)":[8],"degradation":[9,63],"that":[10],"combines":[11],"ab-initio,":[12],"Spherical":[13],"Harmonic":[14],"Expansion":[15],"of":[16],"Boltzmann":[17],"transport":[18],"equation":[19],"and":[20,25,51,64],"TCAD":[21,36],"simulations":[22,42],"is":[23],"developed":[24],"applied":[26],"to":[27,68],"DRAM":[28,72],"peripheral":[29,73],"MOSFETs.":[30],"Automatic":[31],"calibration":[32],"strategies":[33],"the":[35,57],"model":[37],"are":[38,43],"also":[39],"implemented.":[40],"The":[41],"validated":[44],"against":[45],"experimental":[46],"data":[47],"from":[48],"Si/SiGe":[49],"n-":[50],"p-MOSFETs,":[52],"thus":[53],"giving":[54],"insights":[55],"into":[56],"physical":[58],"mechanisms":[59],"responsible":[60],"HCS":[62],"showing":[65],"its":[66],"efficiency":[67],"rapidly":[69],"design":[70],"reliable":[71],"transistors.":[74]},"counts_by_year":[],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2025-10-10T00:00:00"}