{"id":"https://openalex.org/W4410395347","doi":"https://doi.org/10.1109/irps48204.2025.10983437","title":"3 Factor Accelerated Lifetime Testing in Lateral GaN Power HEMTs: A Tutorial","display_name":"3 Factor Accelerated Lifetime Testing in Lateral GaN Power HEMTs: A Tutorial","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410395347","doi":"https://doi.org/10.1109/irps48204.2025.10983437"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10983437","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983437","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067682768","display_name":"Steven Wienecke","orcid":"https://orcid.org/0000-0002-7926-3924"},"institutions":[{"id":"https://openalex.org/I75636454","display_name":"Renesas Electronics (United States)","ror":"https://ror.org/014775w70","country_code":"US","type":"company","lineage":["https://openalex.org/I4210153176","https://openalex.org/I75636454"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Wienecke","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117","institution_ids":["https://openalex.org/I75636454"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110192078","display_name":"Robert Barr","orcid":null},"institutions":[{"id":"https://openalex.org/I75636454","display_name":"Renesas Electronics (United States)","ror":"https://ror.org/014775w70","country_code":"US","type":"company","lineage":["https://openalex.org/I4210153176","https://openalex.org/I75636454"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Barr","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117","institution_ids":["https://openalex.org/I75636454"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5117554638","display_name":"W. Cruse","orcid":null},"institutions":[{"id":"https://openalex.org/I75636454","display_name":"Renesas Electronics (United States)","ror":"https://ror.org/014775w70","country_code":"US","type":"company","lineage":["https://openalex.org/I4210153176","https://openalex.org/I75636454"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W. Cruse","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117","institution_ids":["https://openalex.org/I75636454"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060152747","display_name":"Andy Kin On Wong","orcid":"https://orcid.org/0000-0001-8540-8854"},"institutions":[{"id":"https://openalex.org/I75636454","display_name":"Renesas Electronics (United States)","ror":"https://ror.org/014775w70","country_code":"US","type":"company","lineage":["https://openalex.org/I4210153176","https://openalex.org/I75636454"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Wong","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117","institution_ids":["https://openalex.org/I75636454"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042802004","display_name":"Li Shen","orcid":"https://orcid.org/0000-0001-5659-3464"},"institutions":[{"id":"https://openalex.org/I75636454","display_name":"Renesas Electronics (United States)","ror":"https://ror.org/014775w70","country_code":"US","type":"company","lineage":["https://openalex.org/I4210153176","https://openalex.org/I75636454"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. Shen","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117","institution_ids":["https://openalex.org/I75636454"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033881989","display_name":"Peter Smith","orcid":"https://orcid.org/0000-0001-8286-4563"},"institutions":[{"id":"https://openalex.org/I75636454","display_name":"Renesas Electronics (United States)","ror":"https://ror.org/014775w70","country_code":"US","type":"company","lineage":["https://openalex.org/I4210153176","https://openalex.org/I75636454"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. Smith","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117","institution_ids":["https://openalex.org/I75636454"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028800017","display_name":"K. Shono","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Shono","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Kohoku-ku,Yokohama,Japan,2220002"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Kohoku-ku,Yokohama,Japan,2220002","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102789053","display_name":"R. Lal","orcid":"https://orcid.org/0000-0003-1950-7365"},"institutions":[{"id":"https://openalex.org/I75636454","display_name":"Renesas Electronics (United States)","ror":"https://ror.org/014775w70","country_code":"US","type":"company","lineage":["https://openalex.org/I4210153176","https://openalex.org/I75636454"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Lal","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117","institution_ids":["https://openalex.org/I75636454"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109352066","display_name":"Geetak Gupta","orcid":null},"institutions":[{"id":"https://openalex.org/I75636454","display_name":"Renesas Electronics (United States)","ror":"https://ror.org/014775w70","country_code":"US","type":"company","lineage":["https://openalex.org/I4210153176","https://openalex.org/I75636454"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. Gupta","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117","institution_ids":["https://openalex.org/I75636454"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044270131","display_name":"Davide Bisi","orcid":"https://orcid.org/0000-0002-1660-5261"},"institutions":[{"id":"https://openalex.org/I75636454","display_name":"Renesas Electronics (United States)","ror":"https://ror.org/014775w70","country_code":"US","type":"company","lineage":["https://openalex.org/I4210153176","https://openalex.org/I75636454"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Bisi","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117","institution_ids":["https://openalex.org/I75636454"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5082864885","display_name":"Carl J. Neufeld","orcid":null},"institutions":[{"id":"https://openalex.org/I75636454","display_name":"Renesas Electronics (United States)","ror":"https://ror.org/014775w70","country_code":"US","type":"company","lineage":["https://openalex.org/I4210153176","https://openalex.org/I75636454"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Neufeld","raw_affiliation_strings":["GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Power Device, Renesas Electronics,Quality Assurance,Goleta,CA,USA,93117","institution_ids":["https://openalex.org/I75636454"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"3A.1","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.996399998664856,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9732999801635742,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/factor","display_name":"Factor (programming language)","score":0.5497055053710938},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.528506338596344},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4890511929988861},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.47604990005493164},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4686797261238098},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4683733880519867},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.452929824590683},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3996388912200928},{"id":"https://openalex.org/keywords/nuclear-engineering","display_name":"Nuclear engineering","score":0.3204852044582367},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.18490055203437805},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16934993863105774},{"id":"https://openalex.org/keywords/programming-language","display_name":"Programming language","score":0.0912400484085083},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.08610481023788452}],"concepts":[{"id":"https://openalex.org/C2781039887","wikidata":"https://www.wikidata.org/wiki/Q1391724","display_name":"Factor (programming language)","level":2,"score":0.5497055053710938},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.528506338596344},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4890511929988861},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47604990005493164},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4686797261238098},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4683733880519867},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.452929824590683},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3996388912200928},{"id":"https://openalex.org/C116915560","wikidata":"https://www.wikidata.org/wiki/Q83504","display_name":"Nuclear engineering","level":1,"score":0.3204852044582367},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18490055203437805},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16934993863105774},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0912400484085083},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.08610481023788452},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48204.2025.10983437","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983437","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/4","score":0.49000000953674316,"display_name":"Quality Education"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2201078567","https://openalex.org/W2292267183","https://openalex.org/W3209812439","https://openalex.org/W3212391347","https://openalex.org/W4200011672","https://openalex.org/W4390691388"],"related_works":["https://openalex.org/W2000487630","https://openalex.org/W2017113730","https://openalex.org/W2109359929","https://openalex.org/W2654716541","https://openalex.org/W2037936622","https://openalex.org/W1988167421","https://openalex.org/W4297582192","https://openalex.org/W2533157014","https://openalex.org/W4289782876","https://openalex.org/W4385624134"],"abstract_inverted_index":{"This":[0,137],"work":[1],"introduces":[2],"a":[3,29,95,118,140],"novel":[4],"accelerated":[5],"lifetime":[6,119,147,169],"testing":[7],"(ALT)":[8],"methodology":[9,138],"for":[10,105,146],"Lateral":[11,40,74,89],"GaN-on-Si":[12,172],"high":[13,56],"electron":[14],"mobility":[15],"transistors":[16],"(HEMTs)":[17],"called":[18],"\u201cThree":[19],"Factor":[20],"Acceleration":[21,101],"Testing.\u201d":[22],"By":[23,157],"introducing":[24],"2DEG":[25],"density":[26],"(Ns)":[27],"as":[28],"third":[30,111],"acceleration":[31,116],"factor,":[32],"this":[33,60,159],"method":[34],"enables":[35],"accurate":[36,142],"characterization":[37],"of":[38,98,129,168,177],"the":[39,46,73,87,109,126,161,166,175],"Gate-Drain":[41],"failure":[42,50],"mode":[43,51,76,91],"while":[44],"avoiding":[45],"Vertical":[47],"buffer":[48],"breakdown":[49],"that":[52,86,150],"often":[53],"dominates":[54],"at":[55],"voltages.":[57],"To":[58],"validate":[59],"method,":[61],"intentionally":[62],"fabricated":[63],"\u201cweak\u201d":[64],"parts":[65],"with":[66],"increased":[67],"Ns":[68,99],"were":[69,103],"used":[70],"to":[71],"accelerate":[72],"Failure":[75,90],"under":[77,133],"reasonable":[78],"voltage":[79],"and":[80,108,143],"temperature":[81],"conditions.":[82,136],"Time-to-failure":[83],"experiments":[84],"confirmed":[85],"same":[88],"was":[92,121],"dominant":[93],"across":[94],"wide":[96],"range":[97],"values.":[100],"factors":[102,117],"extracted":[104],"temperature,":[106],"voltage,":[107],"new":[110],"variable":[112],"Ns.":[113],"From":[114],"these":[115],"model":[120],"built":[122],"which":[123],"can":[124,163],"predict":[125],"operational":[127],"lifespan":[128],"our":[130],"GaN":[131],"HEMT":[132],"specific":[134],"operating":[135],"provides":[139],"more":[141],"reliable":[144],"framework":[145],"prediction,":[148],"ensuring":[149],"reliability":[151],"assessments":[152],"better":[153],"reflect":[154],"real-world":[155],"operation.":[156],"adopting":[158],"approach,":[160],"industry":[162],"significantly":[164],"improve":[165],"accuracy":[167],"modeling":[170],"in":[171],"HEMTs,":[173],"reducing":[174],"risk":[176],"unexpected":[178],"field":[179],"failures.":[180]},"counts_by_year":[],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}