{"id":"https://openalex.org/W4410394840","doi":"https://doi.org/10.1109/irps48204.2025.10983281","title":"Improved HCI in SOI-based next generation RF Power Amplifier FETs using device optimization approach","display_name":"Improved HCI in SOI-based next generation RF Power Amplifier FETs using device optimization approach","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410394840","doi":"https://doi.org/10.1109/irps48204.2025.10983281"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10983281","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983281","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021561041","display_name":"Oscar H. Gonzalez","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"O. H. Gonzalez","raw_affiliation_strings":["Globalfoundries US Inc,Malta,NY,USA,12020"],"affiliations":[{"raw_affiliation_string":"Globalfoundries US Inc,Malta,NY,USA,12020","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037178870","display_name":"P. Srinivasan","orcid":"https://orcid.org/0000-0002-9973-5212"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. Srinivasan","raw_affiliation_strings":["Globalfoundries US Inc,Malta,NY,USA,12020"],"affiliations":[{"raw_affiliation_string":"Globalfoundries US Inc,Malta,NY,USA,12020","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013633689","display_name":"S. Cimino","orcid":"https://orcid.org/0000-0002-0947-1920"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Cimino","raw_affiliation_strings":["Globalfoundries US Inc,Malta,NY,USA,12020"],"affiliations":[{"raw_affiliation_string":"Globalfoundries US Inc,Malta,NY,USA,12020","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021114758","display_name":"K. Shanbhag","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Shanbhag","raw_affiliation_strings":["Globalfoundries US Inc,Malta,NY,USA,12020"],"affiliations":[{"raw_affiliation_string":"Globalfoundries US Inc,Malta,NY,USA,12020","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036903090","display_name":"S. Jain","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Jain","raw_affiliation_strings":["Globalfoundries US Inc,Malta,NY,USA,12020"],"affiliations":[{"raw_affiliation_string":"Globalfoundries US Inc,Malta,NY,USA,12020","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5021561041"],"corresponding_institution_ids":["https://openalex.org/I35662394"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10789428,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"P54.PI","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9850000143051147,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9850000143051147,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9553999900817871,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9513999819755554,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.6774393916130066},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.6636934280395508},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6350429654121399},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4675622880458832},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.4652111828327179},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4630091190338135},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46010980010032654},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44716864824295044},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4161064624786377},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.38169413805007935},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27547791600227356},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.2225724160671234},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.20970526337623596},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14255329966545105}],"concepts":[{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.6774393916130066},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6636934280395508},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6350429654121399},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4675622880458832},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.4652111828327179},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4630091190338135},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46010980010032654},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44716864824295044},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4161064624786377},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38169413805007935},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27547791600227356},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2225724160671234},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.20970526337623596},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14255329966545105},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48204.2025.10983281","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983281","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8299999833106995,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W3159778260","https://openalex.org/W4225311919","https://openalex.org/W4403937902"],"related_works":["https://openalex.org/W313219734","https://openalex.org/W2166364432","https://openalex.org/W1989581869","https://openalex.org/W2123894529","https://openalex.org/W3209221379","https://openalex.org/W2156294920","https://openalex.org/W3044227975","https://openalex.org/W3193712762","https://openalex.org/W2725938747","https://openalex.org/W2481061691"],"abstract_inverted_index":{"Hot":[0],"Carrier":[1],"Injection":[2],"(HCI)":[3],"in":[4,13],"drain":[5],"engineered":[6],"thick":[7],"oxide":[8,65],"devices":[9,40],"(ADDGNFETs)":[10],"are":[11],"studied":[12],"both":[14,53],"conducting":[15],"(c-HCI)":[16],"and":[17,28,74],"non-conducting":[18],"state":[19],"(nc-HCI).":[20],"While":[21],"the":[22,58],"initial":[23],"device":[24],"architecture":[25,60,70],"improved":[26,52],"c-HCI":[27],"nc-HCI":[29,55],"without":[30,61],"compromising":[31,63],"RF":[32,78],"Figures":[33],"of":[34,38,57],"Merit,":[35],"process":[36],"optimization":[37,50],"these":[39],"was":[41],"further":[42,62,71],"performed":[43],"to":[44],"improve":[45],"life-time":[46],"Vd.,max":[47],"margin.":[48],"This":[49],"strategy":[51],"c-and":[54],"reliability":[56],"newer":[59],"gate":[64],"breakdown":[66],"characteristics,":[67],"making":[68],"ADDGNFET":[69],"attractive,":[72],"robust":[73],"suitable":[75],"for":[76],"demanding":[77],"applications.":[79]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}