{"id":"https://openalex.org/W4410395293","doi":"https://doi.org/10.1109/irps48204.2025.10983219","title":"Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage","display_name":"Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410395293","doi":"https://doi.org/10.1109/irps48204.2025.10983219"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10983219","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983219","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5017312737","display_name":"Yixin Qin","orcid":"https://orcid.org/0000-0002-9298-9404"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yixin Qin","raw_affiliation_strings":["University of Notre Dame,Department of Electrical Engineering,Notre Dame,IN,USA,46556"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame,Department of Electrical Engineering,Notre Dame,IN,USA,46556","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056623827","display_name":"Saikat Chakraborty","orcid":"https://orcid.org/0000-0002-1662-653X"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Saikat Chakraborty","raw_affiliation_strings":["The Univeristy of Texas at Austin,Department of Electrical and Computer Engineering,Austin,TX,USA,78712"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Univeristy of Texas at Austin,Department of Electrical and Computer Engineering,Austin,TX,USA,78712","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049877206","display_name":"Zijian Zhao","orcid":"https://orcid.org/0000-0001-5191-6447"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zijian Zhao","raw_affiliation_strings":["University of Notre Dame,Department of Electrical Engineering,Notre Dame,IN,USA,46556"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame,Department of Electrical Engineering,Notre Dame,IN,USA,46556","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067654486","display_name":"Shawming Ma","orcid":null},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sizhe Ma","raw_affiliation_strings":["University of Notre Dame,Department of Electrical Engineering,Notre Dame,IN,USA,46556"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame,Department of Electrical Engineering,Notre Dame,IN,USA,46556","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057500521","display_name":"Moonyoung Jung","orcid":"https://orcid.org/0000-0002-5467-9085"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Moonyoung Jung","raw_affiliation_strings":["Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000054315","display_name":"Kijoon Kim","orcid":"https://orcid.org/0000-0003-2689-8376"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kijoon Kim","raw_affiliation_strings":["Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079841922","display_name":"Suhwan Lim","orcid":"https://orcid.org/0000-0003-3578-5488"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Suhwan Lim","raw_affiliation_strings":["Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111918918","display_name":"Kwangyou Seo","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kwangyou Seo","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5106407194","display_name":"Kwangsoo Kim","orcid":"https://orcid.org/0009-0002-7216-7099"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwangsoo Kim","raw_affiliation_strings":["Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Wanki Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Wanki Kim","raw_affiliation_strings":["Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015290434","display_name":"Daewon Ha","orcid":"https://orcid.org/0000-0002-9061-8626"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Daewon Ha","raw_affiliation_strings":["Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd,Hwaseong-si,Gyeonggi-do,Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105710755","display_name":"Vijaykrishnan Narayanan","orcid":null},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vijaykrishnan Narayanan","raw_affiliation_strings":["Pennsylvania State University,Department of Computer Science and Engineering,State College,PA,USA,16802"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pennsylvania State University,Department of Computer Science and Engineering,State College,PA,USA,16802","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003048953","display_name":"Jaydeep P. Kulkarni","orcid":"https://orcid.org/0000-0002-0258-6776"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jaydeep P. Kulkarni","raw_affiliation_strings":["The Univeristy of Texas at Austin,Department of Electrical and Computer Engineering,Austin,TX,USA,78712"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Univeristy of Texas at Austin,Department of Electrical and Computer Engineering,Austin,TX,USA,78712","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075633314","display_name":"Kai Ni","orcid":"https://orcid.org/0000-0002-3628-3431"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kai Ni","raw_affiliation_strings":["University of Notre Dame,Department of Electrical Engineering,Notre Dame,IN,USA,46556"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Notre Dame,Department of Electrical Engineering,Notre Dame,IN,USA,46556","institution_ids":["https://openalex.org/I107639228"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":14,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.0704,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.77375584,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"01","last_page":"06"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.7833137512207031},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.7002588510513306},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6194278597831726},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.5695562362670898},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5575792193412781},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.46209636330604553},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3507981300354004},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13718181848526},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.10643252730369568}],"concepts":[{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.7833137512207031},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.7002588510513306},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6194278597831726},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.5695562362670898},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5575792193412781},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.46209636330604553},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3507981300354004},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13718181848526},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.10643252730369568}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48204.2025.10983219","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983219","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.46000000834465027}],"awards":[{"id":"https://openalex.org/G6671028488","display_name":null,"funder_award_id":"2344819","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1987850127","https://openalex.org/W2056781482","https://openalex.org/W2068708188","https://openalex.org/W2617220603","https://openalex.org/W2744296672","https://openalex.org/W3108694058","https://openalex.org/W3126503310","https://openalex.org/W4281568781","https://openalex.org/W4285127971","https://openalex.org/W4292388301","https://openalex.org/W4385215131","https://openalex.org/W4391622517","https://openalex.org/W4396985745","https://openalex.org/W4403295626","https://openalex.org/W4407692671","https://openalex.org/W6773568562","https://openalex.org/W6788325247","https://openalex.org/W6851775633"],"related_works":["https://openalex.org/W2539463647","https://openalex.org/W2097792885","https://openalex.org/W3165307257","https://openalex.org/W2515312339","https://openalex.org/W2145098804","https://openalex.org/W4391183748","https://openalex.org/W4226211266","https://openalex.org/W2991151827","https://openalex.org/W1987306842","https://openalex.org/W2130440338"],"abstract_inverted_index":{"This":[0],"study":[1],"investigates":[2],"the":[3,24,39,44,72,80,100],"retention":[4,32,53,64,101],"behavior":[5],"of":[6,79,105],"gate-side":[7],"injection":[8],"ferroelectric":[9,45,49,57,108],"FETs":[10],"for":[11],"vertical":[12,107],"NAND":[13,109],"applications.":[14],"Experimental":[15],"results":[16],"demonstrate":[17],"that":[18],"thicker":[19,56],"blocking":[20],"oxide":[21],"layers":[22,50,58],"enhance":[23,99],"initial":[25],"memory":[26],"window":[27],"but":[28],"result":[29],"in":[30],"greater":[31],"loss":[33],"at":[34],"elevated":[35],"temperatures":[36],"due":[37],"to":[38,98],"higher":[40],"depolarization":[41,87],"field":[42],"within":[43],"layer.":[46],"Additionally,":[47],"thinner":[48],"exhibit":[51],"accelerated":[52],"degradation,":[54],"while":[55],"provide":[59],"improved":[60],"stability":[61],"and":[62,86,103],"polarization":[63],"over":[65],"time.":[66],"TCAD":[67],"simulations":[68],"align":[69],"closely":[70],"with":[71],"experimental":[73],"observations,":[74],"providing":[75],"a":[76],"detailed":[77],"understanding":[78],"interplay":[81],"between":[82],"polarization,":[83],"charge":[84],"trapping,":[85],"fields.":[88],"These":[89],"findings":[90],"offer":[91],"valuable":[92],"insights":[93],"into":[94],"optimizing":[95],"layer":[96],"thicknesses":[97],"characteristics":[102],"reliability":[104],"future":[106],"storage":[110],"solutions.":[111]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}