{"id":"https://openalex.org/W4410395032","doi":"https://doi.org/10.1109/irps48204.2025.10983209","title":"NBTI Improvement of HfO<sub>2</sub>/TiN Gated pMOSFET by Low-Temperature Remote Hydrogen Plasma Treatment","display_name":"NBTI Improvement of HfO<sub>2</sub>/TiN Gated pMOSFET by Low-Temperature Remote Hydrogen Plasma Treatment","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410395032","doi":"https://doi.org/10.1109/irps48204.2025.10983209"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10983209","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983209","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089680704","display_name":"Songyi Jiang","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Songyi Jiang","raw_affiliation_strings":["Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100367632","display_name":"Junjie Li","orcid":"https://orcid.org/0000-0001-5191-7992"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junjie Li","raw_affiliation_strings":["Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055401873","display_name":"Hong Yang","orcid":"https://orcid.org/0000-0003-2860-5901"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hong Yang","raw_affiliation_strings":["Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100363004","display_name":"Qianqian Liu","orcid":"https://orcid.org/0000-0001-5093-2779"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qianqian Liu","raw_affiliation_strings":["Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004319046","display_name":"Yunfei Shi","orcid":"https://orcid.org/0000-0002-5527-1014"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yunfei Shi","raw_affiliation_strings":["Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100784279","display_name":"Shuai Yang","orcid":"https://orcid.org/0000-0001-9798-2239"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shuai Yang","raw_affiliation_strings":["Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002760019","display_name":"Runsheng Wang","orcid":"https://orcid.org/0000-0002-7514-0767"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Runsheng Wang","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100367723","display_name":"Xiaolei Wang","orcid":"https://orcid.org/0000-0002-9750-1906"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaolei Wang","raw_affiliation_strings":["Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100749903","display_name":"Jun Luo","orcid":"https://orcid.org/0000-0002-5122-6806"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun Luo","raw_affiliation_strings":["Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"last","author":{"id":null,"display_name":"Wenwu Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wenwu Wang","raw_affiliation_strings":["Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences,Beijing,China,100029","institution_ids":["https://openalex.org/I19820366"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"P56.PI","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/tin","display_name":"Tin","score":0.7521729469299316},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6751453876495361},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6084473133087158},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.5898492336273193},{"id":"https://openalex.org/keywords/hydrogen","display_name":"Hydrogen","score":0.5659126043319702},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5168662667274475},{"id":"https://openalex.org/keywords/performance-improvement","display_name":"Performance improvement","score":0.4512443244457245},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3449326753616333},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23757556080818176},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23676759004592896},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.17677649855613708},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.13255292177200317},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10790997743606567},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10245904326438904}],"concepts":[{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.7521729469299316},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6751453876495361},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6084473133087158},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.5898492336273193},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.5659126043319702},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5168662667274475},{"id":"https://openalex.org/C2778915421","wikidata":"https://www.wikidata.org/wiki/Q3643177","display_name":"Performance improvement","level":2,"score":0.4512443244457245},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3449326753616333},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23757556080818176},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23676759004592896},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.17677649855613708},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.13255292177200317},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10790997743606567},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10245904326438904},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C21547014","wikidata":"https://www.wikidata.org/wiki/Q1423657","display_name":"Operations management","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48204.2025.10983209","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983209","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5799999833106995,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2007858431","https://openalex.org/W2151860561","https://openalex.org/W2552274731","https://openalex.org/W2772734258","https://openalex.org/W2806545428","https://openalex.org/W3106859121","https://openalex.org/W3139354298","https://openalex.org/W4226354697"],"related_works":["https://openalex.org/W1148372108","https://openalex.org/W2492470561","https://openalex.org/W2040310861","https://openalex.org/W2273391071","https://openalex.org/W2332218522","https://openalex.org/W2312192749","https://openalex.org/W1983393460","https://openalex.org/W1483162499","https://openalex.org/W4244232650","https://openalex.org/W2233460958"],"abstract_inverted_index":{"A":[0],"remote":[1],"hydrogen":[2],"plasma":[3],"(H*)":[4],"technique":[5],"in":[6],"pMOSFETs":[7],"is":[8,57,69],"studied.":[9],"The":[10,31],"V<inf":[11],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[12],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">th</inf>":[13],"shift":[14],"of":[15,41,45,53,62,75],"H*-treated":[16],"device":[17],"under":[18],"NBTI":[19],"stress":[20],"at":[21],"125":[22],"\u00b0C":[23],"decreases":[24],"by":[25,66],"58%\u223c74%":[26],"compare":[27],"to":[28,38,59],"baseline":[29],"device.":[30],"H*":[32],"treatment":[33],"induces":[34],"EOT":[35],"increase":[36,40],"due":[37],"the":[39,42,51,60,72],"dielectric":[43],"constant":[44],"interfacial":[46],"layer.":[47],"It":[48],"shows":[49],"that":[50],"reduction":[52],"interface":[54],"state":[55],"density":[56],"attributed":[58],"passivation":[61],"surface":[63],"dangling":[64],"bonds":[65],"H*,":[67],"which":[68],"located":[70],"near":[71],"conduction":[73],"band":[74],"silicon.":[76]},"counts_by_year":[{"year":2026,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}