{"id":"https://openalex.org/W4410395146","doi":"https://doi.org/10.1109/irps48204.2025.10983206","title":"A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO<sub>2</sub> and its Comparison with 2D Gate Dielectrics","display_name":"A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO<sub>2</sub> and its Comparison with 2D Gate Dielectrics","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410395146","doi":"https://doi.org/10.1109/irps48204.2025.10983206"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10983206","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983206","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012609593","display_name":"Ernest Y. Wu","orcid":"https://orcid.org/0000-0003-4979-1029"},"institutions":[{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ernest Y. Wu","raw_affiliation_strings":["Essex Junction,IBM Research Division,Vermont"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Essex Junction,IBM Research Division,Vermont","institution_ids":["https://openalex.org/I4210134083"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078561472","display_name":"Richard G. Southwick","orcid":null},"institutions":[{"id":"https://openalex.org/I4210116763","display_name":"Albany Research Institute","ror":"https://ror.org/01hv1yg09","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I1322918889","https://openalex.org/I2799886695","https://openalex.org/I4210094901","https://openalex.org/I4210116763"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Richard G. Southwick","raw_affiliation_strings":["Albany,New York"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Albany,New York","institution_ids":["https://openalex.org/I4210116763"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101406297","display_name":"Baozhen Li","orcid":"https://orcid.org/0000-0002-9563-9821"},"institutions":[{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Baozhen Li","raw_affiliation_strings":["Essex Junction,IBM Infrastructure,Vermont,USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Essex Junction,IBM Infrastructure,Vermont,USA","institution_ids":["https://openalex.org/I4210134083"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":13.8817,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.98875014,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":98,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"10"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9915000200271606,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/polarity","display_name":"Polarity (international relations)","score":0.799745500087738},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.7751572132110596},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7110556364059448},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.6653976440429688},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5970488786697388},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5578626990318298},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.5180142521858215},{"id":"https://openalex.org/keywords/temperature-measurement","display_name":"Temperature measurement","score":0.4841495156288147},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44390127062797546},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.4338011145591736},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4305759072303772},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4157865047454834},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.33769822120666504},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16843417286872864},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.11370253562927246},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.101157546043396},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09386655688285828}],"concepts":[{"id":"https://openalex.org/C2777361361","wikidata":"https://www.wikidata.org/wiki/Q1112585","display_name":"Polarity (international relations)","level":3,"score":0.799745500087738},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7751572132110596},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7110556364059448},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6653976440429688},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5970488786697388},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5578626990318298},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.5180142521858215},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.4841495156288147},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44390127062797546},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.4338011145591736},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4305759072303772},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4157865047454834},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.33769822120666504},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16843417286872864},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.11370253562927246},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.101157546043396},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09386655688285828},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C1491633281","wikidata":"https://www.wikidata.org/wiki/Q7868","display_name":"Cell","level":2,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48204.2025.10983206","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983206","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5600000023841858}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":64,"referenced_works":["https://openalex.org/W1555263166","https://openalex.org/W1603518645","https://openalex.org/W1903496172","https://openalex.org/W1964180067","https://openalex.org/W1983739222","https://openalex.org/W1999720723","https://openalex.org/W2011493114","https://openalex.org/W2011589247","https://openalex.org/W2019185749","https://openalex.org/W2020230041","https://openalex.org/W2021750186","https://openalex.org/W2029869373","https://openalex.org/W2035369625","https://openalex.org/W2038634467","https://openalex.org/W2040559176","https://openalex.org/W2043365391","https://openalex.org/W2045607365","https://openalex.org/W2045619009","https://openalex.org/W2048169209","https://openalex.org/W2050852906","https://openalex.org/W2055889942","https://openalex.org/W2059074447","https://openalex.org/W2059537683","https://openalex.org/W2070588354","https://openalex.org/W2070871477","https://openalex.org/W2080989378","https://openalex.org/W2084689762","https://openalex.org/W2094040752","https://openalex.org/W2097990647","https://openalex.org/W2098488747","https://openalex.org/W2098550459","https://openalex.org/W2106874988","https://openalex.org/W2113343033","https://openalex.org/W2116771315","https://openalex.org/W2118871138","https://openalex.org/W2122365183","https://openalex.org/W2122413127","https://openalex.org/W2123350152","https://openalex.org/W2124402727","https://openalex.org/W2125904563","https://openalex.org/W2129940722","https://openalex.org/W2134777911","https://openalex.org/W2139006661","https://openalex.org/W2153613757","https://openalex.org/W2155891660","https://openalex.org/W2158030211","https://openalex.org/W2169688698","https://openalex.org/W2171186719","https://openalex.org/W2519468954","https://openalex.org/W2782685893","https://openalex.org/W2790225740","https://openalex.org/W2949827370","https://openalex.org/W2974006943","https://openalex.org/W2993687996","https://openalex.org/W3023501022","https://openalex.org/W3042856480","https://openalex.org/W4200059493","https://openalex.org/W4366825856","https://openalex.org/W4385064090","https://openalex.org/W4396980768","https://openalex.org/W4404112722","https://openalex.org/W4404391689","https://openalex.org/W6668979459","https://openalex.org/W6670687352"],"related_works":["https://openalex.org/W1999781939","https://openalex.org/W2143770098","https://openalex.org/W4313561735","https://openalex.org/W3117450421","https://openalex.org/W2282268409","https://openalex.org/W1971979379","https://openalex.org/W2209174511","https://openalex.org/W2546473172","https://openalex.org/W2065583541","https://openalex.org/W3160961382"],"abstract_inverted_index":{"A":[0],"systematic":[1],"study":[2],"of":[3,14,66,79,82,115,125,133],"ramped$(\\mathbf{RVS})$compared":[4],"to":[5,18,29,123],"constant":[6],"(CVS)":[7],"voltage":[8],"stress":[9,83],"over":[10],"a":[11,46,60,64,72,76],"wide":[12,77],"range":[13,78],"temperature":[15],"(-50":[16],"\u00b0C":[17],"280":[19],"\u00b0C),":[20],"ramp":[21],"rate":[22],"(10$\\mathbf{V}/\\mathbf{s}$to":[23],"0.0002$\\mathrm{V}/\\mathrm{s})$,":[24],"thickness":[25,80],"-$t_{diel}$,":[26],"(~2.0":[27],"nm":[28],"12":[30],"nm),":[31],"and":[32,70,85],"polarity":[33],"dependence":[34],"for$\\text{SiO}_{2}$breakdown":[35],"(BD)":[36],"is":[37],"conducted.":[38],"We":[39,87],"report":[40],"three":[41],"important":[42],"new":[43,47],"findings:":[44],"1)":[45],"relation":[48],"explaining":[49],"the":[50,131],"large":[51],"difference":[52],"between":[53],"activation":[54],"energies$\\Delta":[55],"H_{TBD}(\\sim":[56],"0.7\\text{eV})$and$\\Delta":[57],"H_{VBD}(\\sim":[58],"0.01\\text{eV})$using":[59],"power-law":[61],"model;":[62],"2)":[63],"thickness-dependence":[65,74],"Weibull":[67],"slopes$(\\beta)$of":[68],"voltage-to-breakdown$(V_{BD})$;":[69],"3)":[71],"universal":[73],"of$\\boldsymbol{V}_{\\boldsymbol{BD}}$spanning":[75],"regardless":[81],"polarities":[84],"modes.":[86],"demonstrate":[88],"that":[89],"all":[90],"BD":[91],"parameters,$\\boldsymbol{n},":[92],"\\boldsymbol{\\beta}$,":[93],"and$\\boldsymbol{\\Delta}":[94],"\\boldsymbol{H}$collected":[95],"using":[96,104],"slow":[97],"CVS":[98],"tests":[99],"can":[100],"be":[101],"equally":[102],"obtained":[103],"fast":[105],"RVS":[106],"tests.":[107],"An":[108],"equivalent":[109],"reliability":[110],"projection":[111],"methodology":[112],"using$\\boldsymbol{V}_{\\boldsymbol{BD}}$data":[113],"instead":[114],"time-to-breakdown$(\\boldsymbol{T}_{BD})$to":[116],"calculate$\\boldsymbol{V}_{max}$is":[117],"presented.":[118],"Finally,":[119],"we":[120],"compare$\\boldsymbol{SiO}_{2}":[121],"\\boldsymbol{V}_{\\boldsymbol{BD}}$data":[122],"those":[124],"two-dimensional":[126],"(2D)":[127],"gate":[128],"dielectrics":[129],"showing":[130],"use":[132],"dielectric-strength$(B_{BD}=V_{BD}/t_{diel})$can":[134],"have":[135],"misleading":[136],"conclusions.":[137]},"counts_by_year":[{"year":2026,"cited_by_count":4}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}