{"id":"https://openalex.org/W4410394800","doi":"https://doi.org/10.1109/irps48204.2025.10983084","title":"Reliability Qualification of 1250V Lateral GaN HEMTs for High Reliability Industrial Applications (Invited)","display_name":"Reliability Qualification of 1250V Lateral GaN HEMTs for High Reliability Industrial Applications (Invited)","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410394800","doi":"https://doi.org/10.1109/irps48204.2025.10983084"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10983084","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983084","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047545700","display_name":"K.R. Varadarajan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210146886","display_name":"Power Integrations (United States)","ror":"https://ror.org/058d8a952","country_code":"US","type":"company","lineage":["https://openalex.org/I4210146886"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kamal Varadarajan","raw_affiliation_strings":["Power Integrations,San Jose,CA,USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Integrations,San Jose,CA,USA","institution_ids":["https://openalex.org/I4210146886"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079950867","display_name":"A. L. Ankoudinov","orcid":null},"institutions":[{"id":"https://openalex.org/I4210146886","display_name":"Power Integrations (United States)","ror":"https://ror.org/058d8a952","country_code":"US","type":"company","lineage":["https://openalex.org/I4210146886"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alexei Ankoudinov","raw_affiliation_strings":["Power Integrations,San Jose,CA,USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Integrations,San Jose,CA,USA","institution_ids":["https://openalex.org/I4210146886"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103155346","display_name":"Robert Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210146886","display_name":"Power Integrations (United States)","ror":"https://ror.org/058d8a952","country_code":"US","type":"company","lineage":["https://openalex.org/I4210146886"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Robert Yang","raw_affiliation_strings":["Power Integrations,San Jose,CA,USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Integrations,San Jose,CA,USA","institution_ids":["https://openalex.org/I4210146886"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113904895","display_name":"A. Kudymov","orcid":null},"institutions":[{"id":"https://openalex.org/I4210146886","display_name":"Power Integrations (United States)","ror":"https://ror.org/058d8a952","country_code":"US","type":"company","lineage":["https://openalex.org/I4210146886"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alexey Kudymov","raw_affiliation_strings":["Power Integrations,San Jose,CA,USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Integrations,San Jose,CA,USA","institution_ids":["https://openalex.org/I4210146886"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057334057","display_name":"Bhawani Shankar","orcid":"https://orcid.org/0000-0002-6674-3267"},"institutions":[{"id":"https://openalex.org/I4210146886","display_name":"Power Integrations (United States)","ror":"https://ror.org/058d8a952","country_code":"US","type":"company","lineage":["https://openalex.org/I4210146886"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bhawani Shankar","raw_affiliation_strings":["Power Integrations,San Jose,CA,USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Integrations,San Jose,CA,USA","institution_ids":["https://openalex.org/I4210146886"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045597986","display_name":"Karthick Murukesan","orcid":"https://orcid.org/0000-0002-4370-795X"},"institutions":[{"id":"https://openalex.org/I4210146886","display_name":"Power Integrations (United States)","ror":"https://ror.org/058d8a952","country_code":"US","type":"company","lineage":["https://openalex.org/I4210146886"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Karthick Murukesan","raw_affiliation_strings":["Power Integrations,San Jose,CA,USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Integrations,San Jose,CA,USA","institution_ids":["https://openalex.org/I4210146886"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045330063","display_name":"Sorin Georgescu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210146886","display_name":"Power Integrations (United States)","ror":"https://ror.org/058d8a952","country_code":"US","type":"company","lineage":["https://openalex.org/I4210146886"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sorin Georgescu","raw_affiliation_strings":["Power Integrations,San Jose,CA,USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Integrations,San Jose,CA,USA","institution_ids":["https://openalex.org/I4210146886"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.8159,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.83832149,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":98,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"3A.2","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9559999704360962,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9429000020027161,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.8499339818954468},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.7319158911705017},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.48797696828842163},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4614163339138031},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3985308110713959},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.38297605514526367},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3337525725364685},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3316809833049774},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2818679213523865},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07129848003387451},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.05520322918891907}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.8499339818954468},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.7319158911705017},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.48797696828842163},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4614163339138031},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3985308110713959},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38297605514526367},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3337525725364685},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3316809833049774},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2818679213523865},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07129848003387451},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.05520322918891907},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48204.2025.10983084","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10983084","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.550000011920929,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1557751906","https://openalex.org/W2168224221","https://openalex.org/W2507800947","https://openalex.org/W4313396607","https://openalex.org/W4317792938","https://openalex.org/W4391594662","https://openalex.org/W6780151065","https://openalex.org/W6791355830"],"related_works":["https://openalex.org/W2033512842","https://openalex.org/W4233600955","https://openalex.org/W4322734194","https://openalex.org/W3116237489","https://openalex.org/W4404996554","https://openalex.org/W2913665393","https://openalex.org/W2369695847","https://openalex.org/W3005535424","https://openalex.org/W2994319598","https://openalex.org/W2047067935"],"abstract_inverted_index":{"In":[0],"this":[1,94],"work,":[2],"we":[3,98],"present":[4],"detailed":[5],"high-voltage":[6],"reliability":[7,63],"qualification":[8],"results":[9],"for":[10,26,78,118],"the":[11,32,39,79],"industry's":[12],"first":[13,80],"1250Vrated":[14],"lateral":[15,83],"GaN":[16,41,84],"HEMT":[17],"with":[18,50,69],"significant":[19],"transient":[20],"overvoltage":[21],"capability":[22],"making":[23],"it":[24],"ideal":[25],"high-reliability":[27],"industrial":[28],"applications.":[29],"Based":[30],"on":[31],"PowiGaN\u2122":[33],"technology":[34],"platform":[35],"of":[36,55],"Power":[37],"Integrations,":[38],"1250V":[40,111],"cascode":[42],"device":[43],"shows":[44],"stable":[45],"off-state":[46,62],"leakage":[47],"beyond":[48],"2000V":[49],"a":[51,88,110],"typical":[52],"breakdown":[53],"voltage":[54,61,95],"2300":[56],"V.":[57],"Results":[58],"from":[59],"high":[60],"stresses":[64],"HTRB":[65],"and":[66],"H3TRB":[67],"along":[68],"hard-switching":[70],"DHTOL":[71],"stress":[72],"are":[73],"discussed":[74],"in":[75],"detail,":[76],"illustrating":[77],"time":[81],"that":[82],"HEMTs":[85],"can":[86],"be":[87],"realistic":[89],"wide":[90],"band-gap":[91],"solution":[92],"at":[93,106],"level.":[96],"Additionally,":[97],"have":[99],"also":[100],"demonstrated":[101],"high-efficiency":[102],"power":[103],"supply":[104],"operation":[105],"high-input":[107],"voltages":[108],"using":[109],"flyback":[112],"switcher":[113],"IC,":[114],"confirming":[115],"its":[116],"readiness":[117],"real-world":[119],"use.":[120]},"counts_by_year":[{"year":2026,"cited_by_count":2}],"updated_date":"2026-06-13T07:54:00.901334","created_date":"2025-10-10T00:00:00"}