{"id":"https://openalex.org/W4410394682","doi":"https://doi.org/10.1109/irps48204.2025.10982905","title":"Comprehensive Analysis of DC, Pulsed, and RF Performance of Submicron GaN-on-Si MIS-HEMTs Under Gamma Radiation","display_name":"Comprehensive Analysis of DC, Pulsed, and RF Performance of Submicron GaN-on-Si MIS-HEMTs Under Gamma Radiation","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410394682","doi":"https://doi.org/10.1109/irps48204.2025.10982905"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10982905","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10982905","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113199626","display_name":"Anant Johari","orcid":"https://orcid.org/0009-0008-1165-6175"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Anant Johari","raw_affiliation_strings":["International College of Semiconductor Technology, National Yang Ming Chiao Tung University,Hsinchu,Taiwan"],"affiliations":[{"raw_affiliation_string":"International College of Semiconductor Technology, National Yang Ming Chiao Tung University,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069548552","display_name":"Chin-Ya Su","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chin-Ya Su","raw_affiliation_strings":["International College of Semiconductor Technology, National Yang Ming Chiao Tung University,Hsinchu,Taiwan"],"affiliations":[{"raw_affiliation_string":"International College of Semiconductor Technology, National Yang Ming Chiao Tung University,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029733726","display_name":"Der-Sheng Chao","orcid":"https://orcid.org/0000-0002-5591-9757"},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Der-Sheng Chao","raw_affiliation_strings":["National Tsing Hua University,Nuclear Science and Technology Development Center,Hsinchu,Taiwan"],"affiliations":[{"raw_affiliation_string":"National Tsing Hua University,Nuclear Science and Technology Development Center,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100602567","display_name":"Ankur Gupta","orcid":"https://orcid.org/0000-0003-2179-3612"},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ankur Gupta","raw_affiliation_strings":["Indian Institute of Technology Delhi,School of Interdisciplinary Research,New Delhi,India"],"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology Delhi,School of Interdisciplinary Research,New Delhi,India","institution_ids":["https://openalex.org/I68891433"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104323954","display_name":"Rajendra Singh","orcid":null},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Rajendra Singh","raw_affiliation_strings":["Indian Institute of Technology Delhi,School of Interdisciplinary Research,New Delhi,India"],"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology Delhi,School of Interdisciplinary Research,New Delhi,India","institution_ids":["https://openalex.org/I68891433"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005018373","display_name":"Tian\u2010Li Wu","orcid":"https://orcid.org/0000-0001-6788-5470"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tian-Li Wu","raw_affiliation_strings":["International College of Semiconductor Technology, National Yang Ming Chiao Tung University,Hsinchu,Taiwan"],"affiliations":[{"raw_affiliation_string":"International College of Semiconductor Technology, National Yang Ming Chiao Tung University,Hsinchu,Taiwan","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5113199626"],"corresponding_institution_ids":["https://openalex.org/I148366613"],"apc_list":null,"apc_paid":null,"fwci":1.3954,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.80816493,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7351069450378418},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7047980427742004},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.5589877367019653},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5358283519744873},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.5268726944923401},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4544723927974701},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3038102686405182},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1403067708015442},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.13672715425491333},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12574797868728638},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12326952815055847}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7351069450378418},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7047980427742004},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.5589877367019653},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5358283519744873},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.5268726944923401},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4544723927974701},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3038102686405182},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1403067708015442},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.13672715425491333},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12574797868728638},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12326952815055847},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48204.2025.10982905","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10982905","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.44999998807907104,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1971261619","https://openalex.org/W2018404067","https://openalex.org/W2121443541","https://openalex.org/W2593495332","https://openalex.org/W2620750081","https://openalex.org/W2768105855","https://openalex.org/W2796755023","https://openalex.org/W2902860220","https://openalex.org/W2925056891","https://openalex.org/W2969334475","https://openalex.org/W2971053863","https://openalex.org/W2995828448","https://openalex.org/W2998534174","https://openalex.org/W3004152857","https://openalex.org/W3006010459","https://openalex.org/W4225839343","https://openalex.org/W4285235394","https://openalex.org/W4312683744","https://openalex.org/W4327797463","https://openalex.org/W4396688871","https://openalex.org/W4399727021","https://openalex.org/W4406495801"],"related_works":["https://openalex.org/W2000487630","https://openalex.org/W2017113730","https://openalex.org/W2109359929","https://openalex.org/W2654716541","https://openalex.org/W2037936622","https://openalex.org/W1988167421","https://openalex.org/W4297582192","https://openalex.org/W2533157014","https://openalex.org/W4289782876","https://openalex.org/W4385624134"],"abstract_inverted_index":{"This":[0],"study":[1,107],"comprehensively":[2],"investigates":[3],"the":[4,10,64,80,100,142],"impact":[5],"of":[6,16,24,95,129,145],"gamma":[7,149],"radiation":[8],"on":[9],"DC,":[11],"pulse,":[12],"and":[13,36,42,50,67,75,89,118,124,135,156],"RF":[14,127],"performance":[15,29],"GaN-on-Si":[17,146],"MIS-HEMTs":[18,147],"exposed":[19],"to":[20,71],"a":[21],"total":[22],"dose":[23],"100":[25],"kGy.":[26],"The":[27,106],"DC":[28],"reveals":[30],"an":[31],"enhancement":[32],"in":[33,99,111],"drain":[34],"current":[35,91],"transconductance":[37],"along":[38],"with":[39],"reduced":[40,72,90],"contact":[41],"sheet":[43],"resistance,":[44],"as":[45,131],"confirmed":[46],"through":[47],"input,":[48],"output":[49],"TLM":[51],"measurements.":[52,137],"Breakdown":[53],"analysis":[54],"further":[55],"supports":[56],"these":[57],"improvements,":[58],"revealing":[59],"decreased":[60],"leakage":[61,73],"currents":[62],"across":[63],"gate,":[65],"drain,":[66],"buffer,":[68],"which":[69],"lead":[70],"paths":[74],"higher":[76],"breakdown":[77],"voltages.":[78],"Furthermore,":[79],"pulse":[81],"I-V":[82],"measurements":[83],"show":[84],"minimal":[85],"threshold":[86],"voltage":[87],"shift":[88],"collapse,":[92],"providing":[93],"evidence":[94],"diminished":[96],"trapping":[97],"sites":[98],"gate-drain":[101],"access":[102],"region":[103],"post-gamma":[104],"radiation.":[105],"also":[108],"explores":[109],"improvements":[110],"small-signal":[112],"(<tex":[113],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[114,116,120,122],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$f$</tex><inf":[115,121],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</inf>":[117],"<tex":[119],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">MAX</inf>)":[123],"large-signal":[125],"(\u03b7)":[126],"figures":[128],"merit,":[130],"evidenced":[132],"by":[133],"S-parameter":[134],"load-pull":[136],"These":[138],"experimental":[139],"findings":[140],"highlight":[141],"exceptional":[143],"robustness":[144],"under":[148],"radiation,":[150],"enhancing":[151],"their":[152],"suitability":[153],"for":[154],"harsh":[155],"space":[157],"applications.":[158]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}