{"id":"https://openalex.org/W4410394900","doi":"https://doi.org/10.1109/irps48204.2025.10982816","title":"A Study on the Origin of Dynamic Charge Loss of Next Generation DRAM Cell Array Transistor","display_name":"A Study on the Origin of Dynamic Charge Loss of Next Generation DRAM Cell Array Transistor","publication_year":2025,"publication_date":"2025-03-30","ids":{"openalex":"https://openalex.org/W4410394900","doi":"https://doi.org/10.1109/irps48204.2025.10982816"},"language":"en","primary_location":{"id":"doi:10.1109/irps48204.2025.10982816","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10982816","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063191788","display_name":"Moonyoung Jeong","orcid":"https://orcid.org/0000-0002-5655-1931"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Moonyoung Jeong","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069559205","display_name":"Hyungjun Noh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyungjun Noh","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100330714","display_name":"Sangho Lee","orcid":"https://orcid.org/0000-0002-6817-5339"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangho Lee","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113209387","display_name":"Yootak Jun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yootak Jun","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048891008","display_name":"Jeong\u2010Hoon Oh","orcid":"https://orcid.org/0000-0002-9185-7362"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jeonghoon Oh","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005600710","display_name":"Jemin Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jemin Park","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5020871427","display_name":"Jaihyuk Song","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaihyuk Song","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9218000173568726,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9218000173568726,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.917900025844574,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.9177045822143555},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6957764625549316},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.4855332374572754},{"id":"https://openalex.org/keywords/dynamic-random-access-memory","display_name":"Dynamic random-access memory","score":0.4750407040119171},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45701104402542114},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.425857275724411},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.42335769534111023},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.39648935198783875},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.34974873065948486},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2330622375011444},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21277642250061035},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.18760782480239868},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.12153089046478271},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09620332717895508}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.9177045822143555},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6957764625549316},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.4855332374572754},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.4750407040119171},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45701104402542114},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.425857275724411},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42335769534111023},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39648935198783875},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.34974873065948486},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2330622375011444},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21277642250061035},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.18760782480239868},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.12153089046478271},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09620332717895508},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48204.2025.10982816","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48204.2025.10982816","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8299999833106995,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W573955463","https://openalex.org/W2053658133","https://openalex.org/W4385192512","https://openalex.org/W4391622573","https://openalex.org/W4396949279","https://openalex.org/W4401881675","https://openalex.org/W4407691879"],"related_works":["https://openalex.org/W2518930778","https://openalex.org/W4408861635","https://openalex.org/W2979599569","https://openalex.org/W3007039213","https://openalex.org/W2533585248","https://openalex.org/W2559795407","https://openalex.org/W2944414554","https://openalex.org/W3009022466","https://openalex.org/W4407575299","https://openalex.org/W2123644672"],"abstract_inverted_index":{"Dynamic":[0],"charge":[1,24],"loss":[2,25],"of":[3,13],"next":[4],"generation":[5],"DRAM":[6],"with":[7],"a":[8,14],"cell":[9],"array":[10],"transistor":[11],"consisting":[12],"bulk-less":[15],"thin":[16],"body":[17,28],"was":[18,34],"studied.":[19],"The":[20],"relationship":[21],"between":[22],"dynamic":[23,64],"and":[26,38,51,62],"floating":[27],"effect":[29],"during":[30],"bit":[31],"line":[32],"disturbance":[33],"shown":[35],"by":[36],"experimental":[37],"simulation":[39],"results.":[40],"It":[41],"is":[42],"necessary":[43],"to":[44,59],"minimize":[45],"both":[46],"the":[47,52],"SN":[48],"contact":[49,55],"GIDL":[50,56],"BL":[53],"node":[54],"in":[57],"order":[58],"manage":[60],"\u2018d0\u2019":[61],"\u2018d1\u2019":[63],"operation":[65],"characteristics":[66],"simultaneously.":[67]},"counts_by_year":[{"year":2026,"cited_by_count":3}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}