{"id":"https://openalex.org/W4376606724","doi":"https://doi.org/10.1109/irps48203.2023.10118286","title":"Monolithic 3D Integrated BEOL Dual-Port Ferroelectric FET to Break the Tradeoff Between the Memory Window and the Ferroelectric Thickness","display_name":"Monolithic 3D Integrated BEOL Dual-Port Ferroelectric FET to Break the Tradeoff Between the Memory Window and the Ferroelectric Thickness","publication_year":2023,"publication_date":"2023-03-01","ids":{"openalex":"https://openalex.org/W4376606724","doi":"https://doi.org/10.1109/irps48203.2023.10118286"},"language":"en","primary_location":{"id":"doi:10.1109/irps48203.2023.10118286","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48203.2023.10118286","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030362624","display_name":"Om Prakash","orcid":"https://orcid.org/0000-0003-1219-2700"},"institutions":[{"id":"https://openalex.org/I155173764","display_name":"Rochester Institute of Technology","ror":"https://ror.org/00v4yb702","country_code":"US","type":"education","lineage":["https://openalex.org/I155173764"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Om Prakash","raw_affiliation_strings":["Rochester Institute of Technology,USA","Rochester Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Rochester Institute of Technology,USA","institution_ids":["https://openalex.org/I155173764"]},{"raw_affiliation_string":"Rochester Institute of Technology, USA","institution_ids":["https://openalex.org/I155173764"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075633314","display_name":"Kai Ni","orcid":"https://orcid.org/0000-0002-3628-3431"},"institutions":[{"id":"https://openalex.org/I155173764","display_name":"Rochester Institute of Technology","ror":"https://ror.org/00v4yb702","country_code":"US","type":"education","lineage":["https://openalex.org/I155173764"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kai Ni","raw_affiliation_strings":["Rochester Institute of Technology,USA","Rochester Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Rochester Institute of Technology,USA","institution_ids":["https://openalex.org/I155173764"]},{"raw_affiliation_string":"Rochester Institute of Technology, USA","institution_ids":["https://openalex.org/I155173764"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059133190","display_name":"Hussam Amrouch","orcid":"https://orcid.org/0000-0002-5649-3102"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hussam Amrouch","raw_affiliation_strings":["University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Germany","Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Chair of Semiconductor Test and Reliability (STAR), University of Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5030362624"],"corresponding_institution_ids":["https://openalex.org/I155173764"],"apc_list":null,"apc_paid":null,"fwci":0.8027,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.71162219,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9923999905586243,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.7967762351036072},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.550329864025116},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5313743948936462},{"id":"https://openalex.org/keywords/amorphous-solid","display_name":"Amorphous solid","score":0.5034143328666687},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4702516794204712},{"id":"https://openalex.org/keywords/window","display_name":"Window (computing)","score":0.46562665700912476},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4568335711956024},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.44799157977104187},{"id":"https://openalex.org/keywords/port","display_name":"Port (circuit theory)","score":0.424164354801178},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.34305280447006226},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3199589252471924},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3174450993537903},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16189897060394287},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.13707926869392395},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.11819642782211304},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.11608460545539856},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.08429640531539917}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.7967762351036072},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.550329864025116},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5313743948936462},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.5034143328666687},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4702516794204712},{"id":"https://openalex.org/C2778751112","wikidata":"https://www.wikidata.org/wiki/Q835016","display_name":"Window (computing)","level":2,"score":0.46562665700912476},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4568335711956024},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.44799157977104187},{"id":"https://openalex.org/C32802771","wikidata":"https://www.wikidata.org/wiki/Q2443617","display_name":"Port (circuit theory)","level":2,"score":0.424164354801178},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.34305280447006226},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3199589252471924},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3174450993537903},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16189897060394287},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.13707926869392395},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.11819642782211304},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.11608460545539856},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.08429640531539917},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48203.2023.10118286","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48203.2023.10118286","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2339000942","https://openalex.org/W3038698523","https://openalex.org/W3095256020","https://openalex.org/W3137059735","https://openalex.org/W3164011397","https://openalex.org/W4226199505"],"related_works":["https://openalex.org/W2795319754","https://openalex.org/W2410108108","https://openalex.org/W2248971758","https://openalex.org/W2109115373","https://openalex.org/W4327948915","https://openalex.org/W2390901981","https://openalex.org/W1974020084","https://openalex.org/W2129539607","https://openalex.org/W2166508075","https://openalex.org/W4376612721"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3,48],"applied":[4,56],"the":[5,10,13,24,37,40,59,66,77,84,90,95,103,109,112],"dual-port":[6],"concept":[7],"to":[8,58],"decouple":[9],"trade-off":[11],"between":[12],"Ferroelectric":[14],"(FE)":[15],"thickness":[16],"<tex>$(t_{FE})$</tex>":[17],"scaling":[18,100],"and":[19,44,55,74,80,87,97],"Memory":[20],"Window":[21],"(MW)":[22],"in":[23,68,102],"amorphous":[25,60],"channel":[26,61,98],"ferroelectric":[27],"FET":[28],"(FeFET)":[29],"for":[30,111],"monolithic":[31],"3D":[32],"BEOL":[33],"integration.":[34],"To":[35],"prove":[36],"effectiveness":[38],"of":[39],"proposed":[41],"device":[42],"structure":[43],"explore":[45],"design":[46],"space,":[47],"developed":[49],"a":[50],"fully":[51],"cali-brated":[52],"TCAD":[53],"model":[54],"it":[57],"FeFET":[62,114],"study.":[63],"We":[64,93],"demonstrate":[65],"MW":[67],"two":[69],"different":[70],"scenarios:":[71],"(i)":[72],"write":[73,82],"read":[75,88],"from":[76,83,89],"front":[78,85],"gate,":[79],"(ii)":[81],"gate":[86],"back":[91],"gate.":[92],"show":[94],"<tex>$t_{FE}$</tex>":[96],"length":[99],"possibility":[101,110],"second":[104],"scenario,":[105],"as":[106,108],"well":[107],"multi-bit":[113],"memory":[115],"application.":[116]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":5}],"updated_date":"2026-03-05T09:29:38.588285","created_date":"2025-10-10T00:00:00"}