{"id":"https://openalex.org/W4376606666","doi":"https://doi.org/10.1109/irps48203.2023.10118271","title":"TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection","display_name":"TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection","publication_year":2023,"publication_date":"2023-03-01","ids":{"openalex":"https://openalex.org/W4376606666","doi":"https://doi.org/10.1109/irps48203.2023.10118271"},"language":"en","primary_location":{"id":"doi:10.1109/irps48203.2023.10118271","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48203.2023.10118271","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5032852091","display_name":"Laura Zunarelli","orcid":null},"institutions":[{"id":"https://openalex.org/I4210098188","display_name":"Laboratori Guglielmo Marconi (Italy)","ror":"https://ror.org/01r3vad87","country_code":"IT","type":"company","lineage":["https://openalex.org/I4210098188"]},{"id":"https://openalex.org/I9360294","display_name":"University of Bologna","ror":"https://ror.org/01111rn36","country_code":"IT","type":"education","lineage":["https://openalex.org/I9360294"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"Laura Zunarelli","raw_affiliation_strings":["ARCES and Department of Electronic Engineering Guglielmo Marconi,Bologna,Italy,40136","University of Bologna, Bologna, Italy"],"affiliations":[{"raw_affiliation_string":"ARCES and Department of Electronic Engineering Guglielmo Marconi,Bologna,Italy,40136","institution_ids":["https://openalex.org/I4210098188"]},{"raw_affiliation_string":"University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080980065","display_name":"Luigi Balestra","orcid":"https://orcid.org/0000-0002-0598-899X"},"institutions":[{"id":"https://openalex.org/I9360294","display_name":"University of Bologna","ror":"https://ror.org/01111rn36","country_code":"IT","type":"education","lineage":["https://openalex.org/I9360294"]},{"id":"https://openalex.org/I4210098188","display_name":"Laboratori Guglielmo Marconi (Italy)","ror":"https://ror.org/01r3vad87","country_code":"IT","type":"company","lineage":["https://openalex.org/I4210098188"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Luigi Balestra","raw_affiliation_strings":["ARCES and Department of Electronic Engineering Guglielmo Marconi,Bologna,Italy,40136","University of Bologna, Bologna, Italy"],"affiliations":[{"raw_affiliation_string":"ARCES and Department of Electronic Engineering Guglielmo Marconi,Bologna,Italy,40136","institution_ids":["https://openalex.org/I4210098188"]},{"raw_affiliation_string":"University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031723360","display_name":"Susanna Reggiani","orcid":"https://orcid.org/0000-0002-9616-8558"},"institutions":[{"id":"https://openalex.org/I9360294","display_name":"University of Bologna","ror":"https://ror.org/01111rn36","country_code":"IT","type":"education","lineage":["https://openalex.org/I9360294"]},{"id":"https://openalex.org/I4210098188","display_name":"Laboratori Guglielmo Marconi (Italy)","ror":"https://ror.org/01r3vad87","country_code":"IT","type":"company","lineage":["https://openalex.org/I4210098188"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Susanna Reggiani","raw_affiliation_strings":["ARCES and Department of Electronic Engineering Guglielmo Marconi,Bologna,Italy,40136","University of Bologna, Bologna, Italy"],"affiliations":[{"raw_affiliation_string":"ARCES and Department of Electronic Engineering Guglielmo Marconi,Bologna,Italy,40136","institution_ids":["https://openalex.org/I4210098188"]},{"raw_affiliation_string":"University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075039706","display_name":"Raj Sankaralingam","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Raj Sankaralingam","raw_affiliation_strings":["Texas Instruments,Dallas,TX,75243"],"affiliations":[{"raw_affiliation_string":"Texas Instruments,Dallas,TX,75243","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067864152","display_name":"Mariano Dissegna","orcid":"https://orcid.org/0000-0001-6633-487X"},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mariano Dissegna","raw_affiliation_strings":["Texas Instruments,Dallas,TX,75243"],"affiliations":[{"raw_affiliation_string":"Texas Instruments,Dallas,TX,75243","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042319750","display_name":"Gianluca Boselli","orcid":"https://orcid.org/0000-0003-0665-4630"},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Gianluca Boselli","raw_affiliation_strings":["Texas Instruments,Dallas,TX,75243"],"affiliations":[{"raw_affiliation_string":"Texas Instruments,Dallas,TX,75243","institution_ids":["https://openalex.org/I74760111"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5032852091"],"corresponding_institution_ids":["https://openalex.org/I4210098188","https://openalex.org/I9360294"],"apc_list":null,"apc_paid":null,"fwci":0.1418,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.41884721,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"34","issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ldmos","display_name":"LDMOS","score":0.8002545833587646},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6636778712272644},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6260643005371094},{"id":"https://openalex.org/keywords/irradiation","display_name":"Irradiation","score":0.5884275436401367},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.566714882850647},{"id":"https://openalex.org/keywords/rectifier","display_name":"Rectifier (neural networks)","score":0.5331235527992249},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5325267314910889},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.44061216711997986},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.42681777477264404},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.4179953932762146},{"id":"https://openalex.org/keywords/thermal-runaway","display_name":"Thermal runaway","score":0.4160116910934448},{"id":"https://openalex.org/keywords/nuclear-engineering","display_name":"Nuclear engineering","score":0.35553449392318726},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3479820787906647},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.34675145149230957},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16895708441734314},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.16332697868347168}],"concepts":[{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.8002545833587646},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6636778712272644},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6260643005371094},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.5884275436401367},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.566714882850647},{"id":"https://openalex.org/C50100734","wikidata":"https://www.wikidata.org/wiki/Q7303176","display_name":"Rectifier (neural networks)","level":5,"score":0.5331235527992249},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5325267314910889},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.44061216711997986},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.42681777477264404},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.4179953932762146},{"id":"https://openalex.org/C72688512","wikidata":"https://www.wikidata.org/wiki/Q908282","display_name":"Thermal runaway","level":4,"score":0.4160116910934448},{"id":"https://openalex.org/C116915560","wikidata":"https://www.wikidata.org/wiki/Q83504","display_name":"Nuclear engineering","level":1,"score":0.35553449392318726},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3479820787906647},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.34675145149230957},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16895708441734314},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.16332697868347168},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0},{"id":"https://openalex.org/C86582703","wikidata":"https://www.wikidata.org/wiki/Q7617824","display_name":"Stochastic neural network","level":4,"score":0.0},{"id":"https://openalex.org/C147168706","wikidata":"https://www.wikidata.org/wiki/Q1457734","display_name":"Recurrent neural network","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C555008776","wikidata":"https://www.wikidata.org/wiki/Q267298","display_name":"Battery (electricity)","level":3,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps48203.2023.10118271","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48203.2023.10118271","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:cris.unibo.it:11585/955752","is_oa":false,"landing_page_url":"https://hdl.handle.net/11585/955752","pdf_url":null,"source":{"id":"https://openalex.org/S4306402579","display_name":"Archivio istituzionale della ricerca (Alma Mater Studiorum Universit\u00e0 di Bologna)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4210117483","host_organization_name":"Istituto di Ematologia di Bologna","host_organization_lineage":["https://openalex.org/I4210117483"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8899999856948853,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1990094913","https://openalex.org/W2008380966","https://openalex.org/W2021718487","https://openalex.org/W2023608678","https://openalex.org/W2083156957","https://openalex.org/W2113641455","https://openalex.org/W2133205546","https://openalex.org/W2158400675","https://openalex.org/W2179658663","https://openalex.org/W2576917329","https://openalex.org/W2765834827","https://openalex.org/W2945667101","https://openalex.org/W3014312775","https://openalex.org/W4205417124","https://openalex.org/W4225292572","https://openalex.org/W4237466143","https://openalex.org/W4298033106","https://openalex.org/W6745501591","https://openalex.org/W6762314325"],"related_works":["https://openalex.org/W2145161686","https://openalex.org/W2408925259","https://openalex.org/W1969791423","https://openalex.org/W2394001729","https://openalex.org/W4205733161","https://openalex.org/W4211129232","https://openalex.org/W2057219218","https://openalex.org/W2080313083","https://openalex.org/W2164060541","https://openalex.org/W2043845193"],"abstract_inverted_index":{"This":[0],"paper":[1],"investigates":[2],"a":[3,11,22],"method":[4],"to":[5,73,98],"increase":[6,67],"the":[7,38,51,69,82,91,99],"holding":[8,33,70,92],"voltage":[9,29,34,71],"in":[10,81,90],"conventional":[12],"Silicon":[13],"Controlled":[14],"Rectifier":[15],"(SCR)":[16],"for":[17,59],"ESD":[18],"power":[19],"clamping.":[20],"Specifically,":[21],"SCR-LDMOS":[23],"device":[24],"with":[25],"150":[26],"V":[27,32,75],"trigger":[28],"and":[30,48],"9":[31],"is":[35,57],"investigated":[36],"assuming":[37],"application":[39],"of":[40,55,68,87],"high-energy":[41],"electron":[42],"irradiation.":[43],"Based":[44],"on":[45],"previous":[46],"experimental":[47],"TCAD":[49],"investigations,":[50],"most":[52],"relevant":[53],"kind":[54],"defects":[56],"accounted":[58],"at":[60],"different":[61],"irradiation":[62],"levels":[63],"clearly":[64],"showing":[65],"an":[66],"up":[72,97],"16":[74],"without":[76],"any":[77],"other":[78],"significant":[79],"change":[80],"TLP":[83],"characteristics.":[84],"The":[85],"role":[86],"trapped":[88],"charges":[89],"regime":[93],"has":[94],"been":[95],"addressed":[96],"thermal":[100],"runaway":[101],"through":[102],"extensive":[103],"numerical":[104],"investigations.":[105]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2025-12-19T19:40:27.379048","created_date":"2023-05-17T00:00:00"}