{"id":"https://openalex.org/W4376606733","doi":"https://doi.org/10.1109/irps48203.2023.10118266","title":"Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology","display_name":"Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology","publication_year":2023,"publication_date":"2023-03-01","ids":{"openalex":"https://openalex.org/W4376606733","doi":"https://doi.org/10.1109/irps48203.2023.10118266"},"language":"en","primary_location":{"id":"doi:10.1109/irps48203.2023.10118266","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10118266","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101577578","display_name":"Shudong Huang","orcid":"https://orcid.org/0000-0002-1276-8696"},"institutions":[{"id":"https://openalex.org/I157725225","display_name":"University of Illinois Urbana-Champaign","ror":"https://ror.org/047426m28","country_code":"US","type":"education","lineage":["https://openalex.org/I157725225"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Shudong Huang","raw_affiliation_strings":["University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801"],"affiliations":[{"raw_affiliation_string":"University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801","institution_ids":["https://openalex.org/I157725225"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103323832","display_name":"Srivatsan Parthasarathy","orcid":null},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Srivatsan Parthasarathy","raw_affiliation_strings":["Analog Devices, Inc.,Wilmington,MA,USA","Analog Devices, Inc., Wilmington, MA, USA"],"affiliations":[{"raw_affiliation_string":"Analog Devices, Inc.,Wilmington,MA,USA","institution_ids":["https://openalex.org/I117023288"]},{"raw_affiliation_string":"Analog Devices, Inc., Wilmington, MA, USA","institution_ids":["https://openalex.org/I117023288"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103467160","display_name":"Yuanzhong Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuanzhong Paul Zhou","raw_affiliation_strings":["Analog Devices, Inc.,Wilmington,MA,USA","Analog Devices, Inc., Wilmington, MA, USA"],"affiliations":[{"raw_affiliation_string":"Analog Devices, Inc.,Wilmington,MA,USA","institution_ids":["https://openalex.org/I117023288"]},{"raw_affiliation_string":"Analog Devices, Inc., Wilmington, MA, USA","institution_ids":["https://openalex.org/I117023288"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110613093","display_name":"Jean-Jacques Hajjar","orcid":null},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jean-Jacques Hajjar","raw_affiliation_strings":["Analog Devices, Inc.,Wilmington,MA,USA","Analog Devices, Inc., Wilmington, MA, USA"],"affiliations":[{"raw_affiliation_string":"Analog Devices, Inc.,Wilmington,MA,USA","institution_ids":["https://openalex.org/I117023288"]},{"raw_affiliation_string":"Analog Devices, Inc., Wilmington, MA, USA","institution_ids":["https://openalex.org/I117023288"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019748322","display_name":"Elyse Rosenbaum","orcid":"https://orcid.org/0000-0002-3919-9833"},"institutions":[{"id":"https://openalex.org/I157725225","display_name":"University of Illinois Urbana-Champaign","ror":"https://ror.org/047426m28","country_code":"US","type":"education","lineage":["https://openalex.org/I157725225"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Elyse Rosenbaum","raw_affiliation_strings":["University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801"],"affiliations":[{"raw_affiliation_string":"University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801","institution_ids":["https://openalex.org/I157725225"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5101577578"],"corresponding_institution_ids":["https://openalex.org/I157725225"],"apc_list":null,"apc_paid":null,"fwci":0.5355,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.6366417,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9936000108718872,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.7865839004516602},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.773404598236084},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6452502012252808},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5892788171768188},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5071067810058594},{"id":"https://openalex.org/keywords/anode","display_name":"Anode","score":0.503173291683197},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.49663954973220825},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.49300476908683777},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.48411333560943604},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.46982383728027344},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.46025407314300537},{"id":"https://openalex.org/keywords/rectifier","display_name":"Rectifier (neural networks)","score":0.43012818694114685},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4015800952911377},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.28329628705978394},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2776332497596741},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.26615679264068604},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2588490843772888},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10061782598495483}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.7865839004516602},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.773404598236084},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6452502012252808},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5892788171768188},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5071067810058594},{"id":"https://openalex.org/C89395315","wikidata":"https://www.wikidata.org/wiki/Q181232","display_name":"Anode","level":3,"score":0.503173291683197},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.49663954973220825},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.49300476908683777},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.48411333560943604},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.46982383728027344},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46025407314300537},{"id":"https://openalex.org/C50100734","wikidata":"https://www.wikidata.org/wiki/Q7303176","display_name":"Rectifier (neural networks)","level":5,"score":0.43012818694114685},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4015800952911377},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.28329628705978394},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2776332497596741},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.26615679264068604},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2588490843772888},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10061782598495483},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C147168706","wikidata":"https://www.wikidata.org/wiki/Q1457734","display_name":"Recurrent neural network","level":3,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C86582703","wikidata":"https://www.wikidata.org/wiki/Q7617824","display_name":"Stochastic neural network","level":4,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48203.2023.10118266","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10118266","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7799999713897705,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1601797844","https://openalex.org/W1972227066","https://openalex.org/W2053293833","https://openalex.org/W2069170651","https://openalex.org/W2135978993","https://openalex.org/W2140025717","https://openalex.org/W2162693667","https://openalex.org/W2202631205","https://openalex.org/W2524892090","https://openalex.org/W2546260020","https://openalex.org/W2899467707","https://openalex.org/W3029349274","https://openalex.org/W4293519386","https://openalex.org/W4310585390"],"related_works":["https://openalex.org/W2992364380","https://openalex.org/W1982753365","https://openalex.org/W3038876531","https://openalex.org/W2401021868","https://openalex.org/W2150404448","https://openalex.org/W3181132583","https://openalex.org/W3188821611","https://openalex.org/W2000833818","https://openalex.org/W2097248724","https://openalex.org/W2356020693"],"abstract_inverted_index":{"This":[0],"work":[1],"presents":[2],"a":[3,11,22,27,46,61],"low-leakage":[4],"silicon-controlled-rectifier":[5],"(SCR)":[6],"for":[7,35],"ESD":[8],"protection":[9],"in":[10,76],"45-nm":[12],"PDSOI":[13],"CMOS":[14],"technology.":[15],"The":[16,51],"newly":[17],"proposed":[18],"trigger":[19,29],"circuit":[20],"utilizes":[21],"gate-coupled":[23],"NMOS":[24],"to":[25,44,59,73],"provide":[26,60],"low":[28,47,62],"voltage,":[30],"making":[31],"the":[32,55,68,84],"SCR":[33,56,70],"suitable":[34],"gate":[36],"oxide":[37],"protection.":[38],"Reverse":[39],"body":[40],"bias":[41],"is":[42,57],"used":[43],"achieve":[45],"DC":[48],"leakage":[49],"current.":[50],"anode-cathode":[52],"spacing":[53],"of":[54],"optimized":[58,69],"overshoot":[63,78],"voltage":[64,77],"while":[65],"avoiding":[66],"punchthrough.":[67],"shows":[71],"up":[72],"50%":[74],"improvement":[75],"during":[79],"very":[80],"fast":[81],"transients":[82],"on":[83],"CDM":[85],"timescale.":[86]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}