{"id":"https://openalex.org/W4376606660","doi":"https://doi.org/10.1109/irps48203.2023.10118184","title":"V-Ramp test and gate oxide screening under the \u201clucky\u201d defect model","display_name":"V-Ramp test and gate oxide screening under the \u201clucky\u201d defect model","publication_year":2023,"publication_date":"2023-03-01","ids":{"openalex":"https://openalex.org/W4376606660","doi":"https://doi.org/10.1109/irps48203.2023.10118184"},"language":"en","primary_location":{"id":"doi:10.1109/irps48203.2023.10118184","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10118184","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023990409","display_name":"Kin P. Cheung","orcid":"https://orcid.org/0000-0003-2210-9907"},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"funder","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Kin P Cheung","raw_affiliation_strings":["National Institute of Standards & Technology,Gaithersburg,MD,USA,20899"],"affiliations":[{"raw_affiliation_string":"National Institute of Standards & Technology,Gaithersburg,MD,USA,20899","institution_ids":["https://openalex.org/I1321296531"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5023990409"],"corresponding_institution_ids":["https://openalex.org/I1321296531"],"apc_list":null,"apc_paid":null,"fwci":0.1418,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.41883892,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.7290360927581787},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5758181810379028},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.499037504196167},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.48514994978904724},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.4825005531311035},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4644792973995209},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4434857964515686},{"id":"https://openalex.org/keywords/quality","display_name":"Quality (philosophy)","score":0.44293487071990967},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.4311820864677429},{"id":"https://openalex.org/keywords/work","display_name":"Work (physics)","score":0.41763073205947876},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4013195335865021},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.396322101354599},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3685646057128906},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.364774227142334},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3429073095321655},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.2051546573638916},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1951003074645996},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.07294809818267822}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.7290360927581787},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5758181810379028},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.499037504196167},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.48514994978904724},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4825005531311035},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4644792973995209},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4434857964515686},{"id":"https://openalex.org/C2779530757","wikidata":"https://www.wikidata.org/wiki/Q1207505","display_name":"Quality (philosophy)","level":2,"score":0.44293487071990967},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.4311820864677429},{"id":"https://openalex.org/C18762648","wikidata":"https://www.wikidata.org/wiki/Q42213","display_name":"Work (physics)","level":2,"score":0.41763073205947876},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4013195335865021},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.396322101354599},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3685646057128906},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.364774227142334},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3429073095321655},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.2051546573638916},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1951003074645996},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.07294809818267822},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48203.2023.10118184","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10118184","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1964180067","https://openalex.org/W1982373709","https://openalex.org/W1985162339","https://openalex.org/W1993883223","https://openalex.org/W2001070608","https://openalex.org/W2045619009","https://openalex.org/W2080487545","https://openalex.org/W2119593521","https://openalex.org/W2121397305","https://openalex.org/W2129148142","https://openalex.org/W2159766222","https://openalex.org/W2517882799","https://openalex.org/W2800066024","https://openalex.org/W2800140244","https://openalex.org/W3159859197","https://openalex.org/W4306931100"],"related_works":["https://openalex.org/W1998662473","https://openalex.org/W2075391483","https://openalex.org/W2129617696","https://openalex.org/W2038820605","https://openalex.org/W2742348144","https://openalex.org/W2121416564","https://openalex.org/W2159313014","https://openalex.org/W2124923340","https://openalex.org/W1509811800","https://openalex.org/W2102648694"],"abstract_inverted_index":{"The":[0,28],"persistent":[1],"(after":[2],"exhaustive":[3],"wafer":[4],"cleaning)":[5],"extrinsic":[6],"breakdown":[7,16],"distribution":[8],"of":[9,30,43,51],"thick":[10],"gate":[11],"oxides":[12],"requires":[13],"an":[14],"early":[15,62,96],"mechanism":[17],"that":[18,70,87],"goes":[19],"beyond":[20],"the":[21,31,49,53,56,71,80,88],"popular":[22],"local":[23],"thinning":[24],"model":[25,34],"to":[26,60,75,93],"explain.":[27],"success":[29],"\u201cLucky\u201d":[32],"defect":[33],"in":[35],"fulfilling":[36],"this":[37,65],"role":[38],"deserves":[39],"a":[40],"further":[41],"exploration":[42],"its":[44],"implications.":[45],"This":[46],"work":[47],"examines":[48],"implications":[50],"using":[52],"V-Ramp":[54,72],"and":[55,86],"high-voltage":[57],"screening":[58,90],"methods":[59],"identify":[61],"failures.":[63,97],"In":[64],"study,":[66],"it":[67],"is":[68],"shown":[69],"method":[73,91],"fails":[74,92],"produce":[76],"useful":[77],"information":[78],"about":[79],"oxide":[81],"quality":[82],"at":[83],"operation":[84],"voltages":[85],"high-field":[89],"screen":[94],"out":[95]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}