{"id":"https://openalex.org/W4376606783","doi":"https://doi.org/10.1109/irps48203.2023.10118173","title":"Recent Advances on Electromigration in Cu/SiO<sub>2</sub> to Cu/SiO<sub>2</sub> Hybrid Bonds for 3D Integrated Circuits","display_name":"Recent Advances on Electromigration in Cu/SiO<sub>2</sub> to Cu/SiO<sub>2</sub> Hybrid Bonds for 3D Integrated Circuits","publication_year":2023,"publication_date":"2023-03-01","ids":{"openalex":"https://openalex.org/W4376606783","doi":"https://doi.org/10.1109/irps48203.2023.10118173"},"language":"en","primary_location":{"id":"doi:10.1109/irps48203.2023.10118173","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10118173","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036400103","display_name":"S. Moreau","orcid":"https://orcid.org/0000-0001-6104-2050"},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]},{"id":"https://openalex.org/I899635006","display_name":"Universit\u00e9 Grenoble Alpes","ror":"https://ror.org/02rx3b187","country_code":"FR","type":"education","lineage":["https://openalex.org/I899635006"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"S. Moreau","raw_affiliation_strings":["Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000","institution_ids":["https://openalex.org/I899635006","https://openalex.org/I4210150049","https://openalex.org/I2738703131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042498129","display_name":"D. Bouchu","orcid":null},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]},{"id":"https://openalex.org/I899635006","display_name":"Universit\u00e9 Grenoble Alpes","ror":"https://ror.org/02rx3b187","country_code":"FR","type":"education","lineage":["https://openalex.org/I899635006"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"D. Bouchu","raw_affiliation_strings":["Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000","institution_ids":["https://openalex.org/I899635006","https://openalex.org/I4210150049","https://openalex.org/I2738703131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076482453","display_name":"J. Jourdon","orcid":"https://orcid.org/0000-0001-6594-1686"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J. Jourdon","raw_affiliation_strings":["STMicroelectronics,Crolles Cedex,France,F-38926"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics,Crolles Cedex,France,F-38926","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077684573","display_name":"B. Ayoub","orcid":"https://orcid.org/0009-0009-0774-5412"},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I899635006","display_name":"Universit\u00e9 Grenoble Alpes","ror":"https://ror.org/02rx3b187","country_code":"FR","type":"education","lineage":["https://openalex.org/I899635006"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"B. Ayoub","raw_affiliation_strings":["Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000","STMicroelectronics, Crolles Cedex, France","IMS Laboratory, University of Bordeaux, Talence, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000","institution_ids":["https://openalex.org/I899635006","https://openalex.org/I4210150049","https://openalex.org/I2738703131"]},{"raw_affiliation_string":"STMicroelectronics, Crolles Cedex, France","institution_ids":["https://openalex.org/I4210104693"]},{"raw_affiliation_string":"IMS Laboratory, University of Bordeaux, Talence, France","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I15057530"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060711149","display_name":"S. Lhostis","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Lhostis","raw_affiliation_strings":["STMicroelectronics,Crolles Cedex,France,F-38926"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics,Crolles Cedex,France,F-38926","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105889273","display_name":"H. Fr\u00e9mont","orcid":"https://orcid.org/0000-0003-3747-5774"},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"H. Fr\u00e9mont","raw_affiliation_strings":["University of Bordeaux,IMS Laboratory,Talence,France,F-33405"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Bordeaux,IMS Laboratory,Talence,France,F-33405","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I15057530"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5051003297","display_name":"P. Lamontagne","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Lamontagne","raw_affiliation_strings":["STMicroelectronics,Crolles Cedex,France,F-38926"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics,Crolles Cedex,France,F-38926","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5036400103"],"corresponding_institution_ids":["https://openalex.org/I2738703131","https://openalex.org/I4210150049","https://openalex.org/I899635006"],"apc_list":null,"apc_paid":null,"fwci":1.138,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.77439141,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.9955321550369263},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.811159610748291},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7087804079055786},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6949590444564819},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5065566301345825},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5056667327880859},{"id":"https://openalex.org/keywords/current-density","display_name":"Current density","score":0.46736571192741394},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4507066607475281},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.44343259930610657},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.4253714084625244},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41089892387390137},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3294829726219177},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.2723432779312134},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.26623058319091797},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12464749813079834},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1036120355129242},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08983367681503296}],"concepts":[{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.9955321550369263},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.811159610748291},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7087804079055786},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6949590444564819},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5065566301345825},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5056667327880859},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.46736571192741394},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4507066607475281},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.44343259930610657},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.4253714084625244},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41089892387390137},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3294829726219177},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2723432779312134},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.26623058319091797},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12464749813079834},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1036120355129242},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08983367681503296},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps48203.2023.10118173","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10118173","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:cea-04760292v1","is_oa":false,"landing_page_url":"https://cea.hal.science/cea-04760292","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL (Le Centre pour la Communication Scientifique Directe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1294671590","host_organization_name":"Centre National de la Recherche Scientifique","host_organization_lineage":["https://openalex.org/I1294671590"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"https://ieeexplore.ieee.org/document/10118173","raw_type":"Conference papers"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7900000214576721,"id":"https://metadata.un.org/sdg/10","display_name":"Reduced inequalities"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1661007454","https://openalex.org/W1854451624","https://openalex.org/W1997982424","https://openalex.org/W2016006114","https://openalex.org/W2076367920","https://openalex.org/W2078485804","https://openalex.org/W2160282363","https://openalex.org/W2511451423","https://openalex.org/W2517036333","https://openalex.org/W2555508697","https://openalex.org/W2585597896","https://openalex.org/W2789076592","https://openalex.org/W2952221193","https://openalex.org/W2971512285","https://openalex.org/W4280573311"],"related_works":["https://openalex.org/W2136403807","https://openalex.org/W796810817","https://openalex.org/W2144151832","https://openalex.org/W2083496115","https://openalex.org/W2807427006","https://openalex.org/W2122281731","https://openalex.org/W2539565354","https://openalex.org/W1968221612","https://openalex.org/W3156935690","https://openalex.org/W1679696056"],"abstract_inverted_index":{"With":[0],"hybrid":[1,80],"bonding":[2,81],"(HB)":[3],"pitch":[4,64],"reduction,":[5],"many":[6],"challenges":[7],"are":[8],"arising.":[9],"One":[10],"of":[11,18,109],"them":[12],"is":[13,31],"related":[14],"to":[15,34,40,68,79],"the":[16,35,51,62,76,86,105,110],"reliability":[17],"HB-based":[19,58],"interconnects":[20,59],"and":[21,42],"in":[22,38,50,57],"particular":[23],"their":[24],"electromigration":[25,28],"performances":[26],"as":[27],"(EM)-related":[29],"degradation":[30],"intimately":[32],"linked":[33],"electrical":[36],"current":[37],"addition":[39],"temperature":[41],"mechanical":[43],"stresses.":[44],"This":[45],"study":[46],"highlights":[47],"a":[48],"change":[49],"failure":[52],"modes":[53],"for":[54],"EM-related":[55],"failures":[56],"when":[60],"decreasing":[61],"interconnect":[63],"from":[65,75],"6.84":[66],"down":[67],"1.44":[69],"\u00b5m.":[70],"The":[71],"weakest":[72],"link":[73],"moves":[74],"BEOL":[77],"levels":[78],"ones":[82],"but":[83],"without":[84],"affecting":[85],"projected":[87],"performance":[88],"under":[89],"use":[90],"conditions.":[91],"Additional":[92],"studies":[93],"done":[94],"on":[95,104],"design":[96],"aspects":[97],"do":[98],"not":[99],"evidence":[100],"any":[101],"negative":[102],"impact":[103],"electro":[106],"migration":[107],"resistance":[108],"HB":[111],"brick.":[112]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1}],"updated_date":"2026-05-07T13:39:58.223016","created_date":"2025-10-10T00:00:00"}