{"id":"https://openalex.org/W4376606617","doi":"https://doi.org/10.1109/irps48203.2023.10118125","title":"Novel Operation Scheme for Suppressing Disturb in HfO<sub>2</sub>-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics","display_name":"Novel Operation Scheme for Suppressing Disturb in HfO<sub>2</sub>-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics","publication_year":2023,"publication_date":"2023-03-01","ids":{"openalex":"https://openalex.org/W4376606617","doi":"https://doi.org/10.1109/irps48203.2023.10118125"},"language":"en","primary_location":{"id":"doi:10.1109/irps48203.2023.10118125","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10118125","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010732540","display_name":"Takamasa Hamai","orcid":"https://orcid.org/0000-0002-2209-4031"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Takamasa Hamai","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104092789","display_name":"Kunifumi Suzuki","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kunifumi Suzuki","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008690719","display_name":"Reika Ichihara","orcid":"https://orcid.org/0000-0001-9016-5420"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Reika Ichihara","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062618698","display_name":"Y. Higashi","orcid":"https://orcid.org/0000-0001-6121-0069"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yusuke Higashi","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022450843","display_name":"Yoko Yoshimura","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yoko Yoshimura","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112769942","display_name":"Kiwamu Sakuma","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kiwamu Sakuma","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110686776","display_name":"Kensuke Ota","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kensuke Ota","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100668871","display_name":"Kota Takahashi","orcid":"https://orcid.org/0009-0006-1173-8723"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kota Takahashi","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066277266","display_name":"Keitaro Matsuo","orcid":"https://orcid.org/0000-0003-1761-6314"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kazuhiro Matsuo","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049630564","display_name":"Shosuke Fujii","orcid":"https://orcid.org/0000-0003-1112-2081"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shosuke Fujii","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087391821","display_name":"Masumi Saitoh","orcid":"https://orcid.org/0000-0001-6469-7992"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Masumi Saitoh","raw_affiliation_strings":["Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&#x0026;D,Kioxia Corporation,Yokkaichi,Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5010732540"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2678,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.51729142,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.994700014591217,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.645740807056427},{"id":"https://openalex.org/keywords/polarization","display_name":"Polarization (electrochemistry)","score":0.630973219871521},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.4815140664577484},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4175228774547577},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.41531333327293396},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.40583664178848267},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.38908424973487854},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3272010087966919},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.27135011553764343},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1729009449481964},{"id":"https://openalex.org/keywords/biology","display_name":"Biology","score":0.09867942333221436},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.09201642870903015}],"concepts":[{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.645740807056427},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.630973219871521},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.4815140664577484},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4175228774547577},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41531333327293396},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.40583664178848267},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38908424973487854},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3272010087966919},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.27135011553764343},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1729009449481964},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.09867942333221436},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.09201642870903015},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48203.2023.10118125","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10118125","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1976174178","https://openalex.org/W1976518187","https://openalex.org/W1976902828","https://openalex.org/W2810348791","https://openalex.org/W2893931540","https://openalex.org/W3038236592","https://openalex.org/W3082791943","https://openalex.org/W3108325618","https://openalex.org/W3139411171","https://openalex.org/W4210423638","https://openalex.org/W4225310534","https://openalex.org/W4225329871","https://openalex.org/W4225495011","https://openalex.org/W4225981815","https://openalex.org/W4312051257"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2394289659","https://openalex.org/W4296916267","https://openalex.org/W2051069894","https://openalex.org/W4252213749","https://openalex.org/W2007742350","https://openalex.org/W769734323","https://openalex.org/W2354192024","https://openalex.org/W2018070723","https://openalex.org/W2007529921"],"abstract_inverted_index":{"We":[0,90],"successfully":[1],"demonstrate":[2],"a":[3,27,58,114],"significant":[4],"suppression":[5,94],"of":[6,60,88,121],"the":[7,14,42,53,69,73,77,92,103,108,119,122],"<tex":[8],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[9,20,45,49],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$V_{th}$</tex>":[10],"shift":[11],"caused":[12],"by":[13,83],"program/erase":[15],"disturb":[16,54,93],"in":[17,56],"HfO":[18,43],"<inf":[19,44,48],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[21,46,50],"-based":[22],"ferroelectric":[23],"FET":[24],"(FeFET)":[25],"using":[26],"novel":[28],"operation":[29],"scheme.":[30],"Polarization":[31],"reversal":[32],"is":[33,81],"found":[34],"to":[35,57,79,106],"occur":[36],"after":[37],"volatile":[38],"carrier":[39,70],"trapping":[40,71,101],"at":[41],"/SiO":[47],"interface.":[51],"Dividing":[52],"stress":[55],"train":[59],"short":[61],"voltage":[62],"pulses":[63],"with":[64],"intentional":[65],"long":[66],"intervals":[67],"decouples":[68],"from":[72],"polarization":[74,105],"reversal.":[75],"Consequently,":[76],"immunity":[78],"disturbance":[80],"improved":[82],"more":[84],"than":[85],"four":[86],"orders":[87],"magnitude.":[89],"model":[91],"mechanism":[95],"as":[96],"follows:":[97],"insufficient":[98],"interfacial":[99],"charge":[100],"unstabilizes":[102],"reversed":[104],"keep":[107],"domain":[109],"undisturbed.":[110],"Our":[111],"findings":[112],"show":[113],"promising":[115],"guideline":[116],"for":[117],"improving":[118],"reliability":[120],"FeFET":[123],"array":[124],"operation.":[125]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}