{"id":"https://openalex.org/W4376606741","doi":"https://doi.org/10.1109/irps48203.2023.10118091","title":"Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs","display_name":"Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs","publication_year":2023,"publication_date":"2023-03-01","ids":{"openalex":"https://openalex.org/W4376606741","doi":"https://doi.org/10.1109/irps48203.2023.10118091"},"language":"en","primary_location":{"id":"doi:10.1109/irps48203.2023.10118091","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10118091","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100357417","display_name":"Dongyoung Kim","orcid":"https://orcid.org/0000-0001-7039-4904"},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Dongyoung Kim","raw_affiliation_strings":["State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203"],"affiliations":[{"raw_affiliation_string":"State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203","institution_ids":["https://openalex.org/I90965887"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030168894","display_name":"Skylar deBoer","orcid":null},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Skylar DeBoer","raw_affiliation_strings":["State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203"],"affiliations":[{"raw_affiliation_string":"State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203","institution_ids":["https://openalex.org/I90965887"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043455491","display_name":"Stephen A. Mancini","orcid":"https://orcid.org/0009-0007-9126-8721"},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Stephen A Mancini","raw_affiliation_strings":["State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203"],"affiliations":[{"raw_affiliation_string":"State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203","institution_ids":["https://openalex.org/I90965887"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061896267","display_name":"Sundar Babu Isukapati","orcid":"https://orcid.org/0000-0002-0838-1245"},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sundar Babu Isukapati","raw_affiliation_strings":["State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203"],"affiliations":[{"raw_affiliation_string":"State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203","institution_ids":["https://openalex.org/I90965887"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037088031","display_name":"Justin Lynch","orcid":"https://orcid.org/0000-0001-8497-9954"},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Justin Lynch","raw_affiliation_strings":["State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203"],"affiliations":[{"raw_affiliation_string":"State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203","institution_ids":["https://openalex.org/I90965887"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065180227","display_name":"Nick Yun","orcid":null},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nick Yun","raw_affiliation_strings":["State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203"],"affiliations":[{"raw_affiliation_string":"State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203","institution_ids":["https://openalex.org/I90965887"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080969197","display_name":"Adam J. Morgan","orcid":"https://orcid.org/0000-0002-8330-4792"},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Adam J Morgan","raw_affiliation_strings":["State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203"],"affiliations":[{"raw_affiliation_string":"State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203","institution_ids":["https://openalex.org/I90965887"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101405544","display_name":"Seung Yup Jang","orcid":"https://orcid.org/0000-0002-2202-8800"},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Seung Yup Jang","raw_affiliation_strings":["State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203"],"affiliations":[{"raw_affiliation_string":"State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203","institution_ids":["https://openalex.org/I90965887"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5072043921","display_name":"Woongje Sung","orcid":"https://orcid.org/0000-0003-0960-5973"},"institutions":[{"id":"https://openalex.org/I90965887","display_name":"SUNY Polytechnic Institute","ror":"https://ror.org/000fxgx19","country_code":"US","type":"education","lineage":["https://openalex.org/I90965887"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Woongje Sung","raw_affiliation_strings":["State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203"],"affiliations":[{"raw_affiliation_string":"State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203","institution_ids":["https://openalex.org/I90965887"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5100357417"],"corresponding_institution_ids":["https://openalex.org/I90965887"],"apc_list":null,"apc_paid":null,"fwci":1.1738,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.77912407,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11102","display_name":"HVDC Systems and Fault Protection","score":0.9927999973297119,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9896000027656555,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6760438680648804},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5766390562057495},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5732799768447876},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.5444851517677307},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5375767350196838},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5254002213478088},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.47283536195755005},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.46352726221084595},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.41505536437034607},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3491404056549072},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2221207618713379},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.20540079474449158},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.17734652757644653},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17102131247520447}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6760438680648804},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5766390562057495},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5732799768447876},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5444851517677307},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5375767350196838},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5254002213478088},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.47283536195755005},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.46352726221084595},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.41505536437034607},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3491404056549072},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2221207618713379},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.20540079474449158},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.17734652757644653},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17102131247520447},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48203.2023.10118091","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps48203.2023.10118091","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2737262326","https://openalex.org/W2742251339","https://openalex.org/W2810870704","https://openalex.org/W3010791491","https://openalex.org/W3040019041","https://openalex.org/W3198228742","https://openalex.org/W3208905512","https://openalex.org/W4284711439","https://openalex.org/W4308673463"],"related_works":["https://openalex.org/W1977042749","https://openalex.org/W2542162669","https://openalex.org/W2042881279","https://openalex.org/W2121451436","https://openalex.org/W2115248544","https://openalex.org/W1608296848","https://openalex.org/W2975003965","https://openalex.org/W2049062674","https://openalex.org/W2492111440","https://openalex.org/W4378676346"],"abstract_inverted_index":{"This":[0],"paper":[1],"reports":[2],"static,":[3],"dynamic,":[4],"and":[5,18,22,93,98,202],"short-circuit":[6,116,140,151,203],"characteristics":[7,204],"of":[8,67,119,169],"split-gate":[9],"(SG)":[10],"1.2":[11],"kV":[12],"4H-SiC":[13],"MOSFETs.":[14,85,209],"Conventional":[15],"(C)":[16],"MOSFETs":[17,121],"SG-MOSFETs":[19,196],"were":[20,27,122,155],"fabricated":[21],"evaluated.":[23,123],"Identical":[24],"conduction":[25],"behaviors":[26],"achieved":[28,193],"due":[29],"to":[30,64,83,148,206],"them":[31],"having":[32],"the":[33,38,43,49,65,68,70,109,115,120,126,133,166,170,181,195,207],"same":[34],"cell":[35],"pitch.":[36],"Although":[37],"maximum":[39,127],"electric":[40,183],"field":[41,184],"in":[42,48,108,132,172,185,194,200],"gate":[44,171,186],"oxide":[45],"is":[46,130,162],"higher":[47,131],"SG-MOSFETs,":[50,134],"this":[51],"both":[52],"device":[53],"architectures":[54],"obtained":[55],"similar":[56,139],"breakdown":[57],"voltages":[58],"with":[59,165,197],"low":[60],"leakage":[61],"current.":[62],"Due":[63],"structure":[66],"split-gate,":[69],"reverse":[71],"capacitance":[72],"<tex":[73],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[74],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$(\\mathbf{C}_{\\mathbf{rss}})$</tex>":[75],"was":[76,96,103,144,158,192],"reduced":[77,104,189],"by":[78,105],"32":[79],"%":[80,107],"when":[81],"compared":[82,205],"conventional":[84,208],"As":[86],"a":[87,138],"result,":[88],"switching":[89,101],"loss":[90,102,191],"for":[91],"turn-on":[92],"turn-off":[94],"transients":[95],"reduced,":[97],"thus":[99],"total":[100],"25":[106],"SG-":[110,173],"M":[111,174],"OSFE":[112,175],"Ts.":[113],"Finally,":[114],"(SC)":[117],"ruggedness":[118],"Even":[124],"though":[125],"drain":[128],"current":[129],"under":[135,177],"SC":[136,178],"condition,":[137],"withstand":[141],"time":[142],"(SCWT)":[143],"obtained.":[145],"In":[146],"order":[147],"further":[149],"investigate":[150],"characteristics,":[152],"non-isothermal":[153],"simulations":[154],"conducted.":[156],"It":[157],"discovered":[159],"that":[160],"there":[161],"no":[163,198],"issue":[164],"exposed":[167],"edge":[168],"Ts":[176],"conditions":[179],"despite":[180],"high":[182],"oxide.":[187],"Significantly":[188],"energy":[190],"compromise":[199],"static":[201]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2}],"updated_date":"2026-03-28T08:17:26.163206","created_date":"2025-10-10T00:00:00"}