{"id":"https://openalex.org/W4376606622","doi":"https://doi.org/10.1109/irps48203.2023.10117930","title":"Collector Engineering of ESD PNP in BCD Technologies","display_name":"Collector Engineering of ESD PNP in BCD Technologies","publication_year":2023,"publication_date":"2023-03-01","ids":{"openalex":"https://openalex.org/W4376606622","doi":"https://doi.org/10.1109/irps48203.2023.10117930"},"language":"en","primary_location":{"id":"doi:10.1109/irps48203.2023.10117930","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48203.2023.10117930","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101801344","display_name":"Yujie Zhou","orcid":"https://orcid.org/0009-0000-9231-9534"},"institutions":[{"id":"https://openalex.org/I157725225","display_name":"University of Illinois Urbana-Champaign","ror":"https://ror.org/047426m28","country_code":"US","type":"education","lineage":["https://openalex.org/I157725225"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yujie Zhou","raw_affiliation_strings":["University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801","institution_ids":["https://openalex.org/I157725225"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060808602","display_name":"D. J. Lafonteese","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"David LaFonteese","raw_affiliation_strings":["Texas Instruments,Dallas,TX,USA,75243"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments,Dallas,TX,USA,75243","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019748322","display_name":"Elyse Rosenbaum","orcid":"https://orcid.org/0000-0002-3919-9833"},"institutions":[{"id":"https://openalex.org/I157725225","display_name":"University of Illinois Urbana-Champaign","ror":"https://ror.org/047426m28","country_code":"US","type":"education","lineage":["https://openalex.org/I157725225"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Elyse Rosenbaum","raw_affiliation_strings":["University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801","institution_ids":["https://openalex.org/I157725225"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.5870810747146606},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5647385716438293},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5430977940559387},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.5428149700164795},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5353176593780518},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5221512913703918},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5075894594192505},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5038897395133972},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.47572043538093567},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4031078517436981},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3917149305343628}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.5870810747146606},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5647385716438293},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5430977940559387},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.5428149700164795},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5353176593780518},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5221512913703918},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5075894594192505},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5038897395133972},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.47572043538093567},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4031078517436981},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3917149305343628}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps48203.2023.10117930","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/irps48203.2023.10117930","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.4099999964237213,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2042807112","https://openalex.org/W2044400375","https://openalex.org/W2099227783","https://openalex.org/W2100679867","https://openalex.org/W2160619662","https://openalex.org/W2582455713","https://openalex.org/W2613533325","https://openalex.org/W3158908384","https://openalex.org/W4244608798","https://openalex.org/W6630831726","https://openalex.org/W6631379344","https://openalex.org/W6635764473"],"related_works":["https://openalex.org/W2124694210","https://openalex.org/W2544244340","https://openalex.org/W2153609444","https://openalex.org/W3160715487","https://openalex.org/W1482270496","https://openalex.org/W2092583844","https://openalex.org/W1967807891","https://openalex.org/W2157426934","https://openalex.org/W2066631093","https://openalex.org/W4324123959"],"abstract_inverted_index":{"PNP":[0,42],"bipolar":[1],"transistors":[2],"are":[3,45],"an":[4],"ESD":[5],"protection":[6,43],"solution":[7],"for":[8,40],"high-voltage":[9,35],"analog":[10],"products.":[11],"Using":[12],"both":[13],"measurements":[14],"and":[15,55,58],"TCAD":[16],"simulations,":[17],"this":[18],"work":[19],"analyzes":[20],"the":[21,24,30,63],"effects":[22],"of":[23,33],"deep":[25,54],"collector":[26,57],"P-Well":[27],"implants":[28],"on":[29],"I-V":[31],"characteristic":[32],"a":[34,41,53],"lateral":[36],"PNP.":[37],"Design":[38],"guidelines":[39],"device":[44],"formulated;":[46],"specifically,":[47],"it":[48],"is":[49],"recommended":[50],"to":[51],"use":[52],"narrow":[56],"minimize":[59],"vertical":[60],"non-uniformity":[61],"in":[62],"doping":[64],"profile.":[65]},"counts_by_year":[{"year":2026,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}