{"id":"https://openalex.org/W3157225202","doi":"https://doi.org/10.1109/irps46558.2021.9405207","title":"A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation","display_name":"A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3157225202","doi":"https://doi.org/10.1109/irps46558.2021.9405207","mag":"3157225202"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405207","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405207","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030707614","display_name":"Paul Salmen","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"P. Salmen","raw_affiliation_strings":["Infineon Technologies AG, Warstein, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Warstein, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051422252","display_name":"Maximilian W. Feil","orcid":"https://orcid.org/0000-0002-5383-5402"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M. W. Feil","raw_affiliation_strings":["Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112915941","display_name":"Katja Waschneck","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"K. Waschneck","raw_affiliation_strings":["Infineon Technologies GmbH & Co. KG, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies GmbH & Co. KG, Dresden, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081937576","display_name":"H. Reisinger","orcid":"https://orcid.org/0000-0001-6776-349X"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H. Reisinger","raw_affiliation_strings":["Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051820218","display_name":"Gerald Rescher","orcid":"https://orcid.org/0000-0002-2068-3991"},"institutions":[{"id":"https://openalex.org/I4210131793","display_name":"Infineon Technologies (Austria)","ror":"https://ror.org/03msng824","country_code":"AT","type":"company","lineage":["https://openalex.org/I137594350","https://openalex.org/I4210131793"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"G. Rescher","raw_affiliation_strings":["Infineon Technologies Austria AG, Villach, Austria"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies Austria AG, Villach, Austria","institution_ids":["https://openalex.org/I4210131793"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5046559334","display_name":"Thomas Aichinger","orcid":"https://orcid.org/0000-0002-6866-8141"},"institutions":[{"id":"https://openalex.org/I4210131793","display_name":"Infineon Technologies (Austria)","ror":"https://ror.org/03msng824","country_code":"AT","type":"company","lineage":["https://openalex.org/I137594350","https://openalex.org/I4210131793"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"T. Aichinger","raw_affiliation_strings":["Infineon Technologies Austria AG, Villach, Austria"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies Austria AG, Villach, Austria","institution_ids":["https://openalex.org/I4210131793"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5030707614"],"corresponding_institution_ids":["https://openalex.org/I137594350"],"apc_list":null,"apc_paid":null,"fwci":2.8096,"has_fulltext":false,"cited_by_count":34,"citation_normalized_percentile":{"value":0.9091047,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":93,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.8326187133789062},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.538334310054779},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.5177780389785767},{"id":"https://openalex.org/keywords/stability","display_name":"Stability (learning theory)","score":0.4805734157562256},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4198059141635895},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41275691986083984},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3349301218986511},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.328716903924942},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.27337372303009033},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24901846051216125},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.19658872485160828}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8326187133789062},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.538334310054779},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5177780389785767},{"id":"https://openalex.org/C112972136","wikidata":"https://www.wikidata.org/wiki/Q7595718","display_name":"Stability (learning theory)","level":2,"score":0.4805734157562256},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4198059141635895},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41275691986083984},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3349301218986511},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.328716903924942},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.27337372303009033},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24901846051216125},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19658872485160828},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405207","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405207","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/12","score":0.4099999964237213,"display_name":"Responsible consumption and production"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1995091988","https://openalex.org/W2112188813","https://openalex.org/W2114648586","https://openalex.org/W2149263288","https://openalex.org/W2550484295","https://openalex.org/W2770666768","https://openalex.org/W2799570083","https://openalex.org/W2803528042","https://openalex.org/W3038783829","https://openalex.org/W3040580115","https://openalex.org/W3040603639","https://openalex.org/W3041577491","https://openalex.org/W3041791926","https://openalex.org/W6729559499","https://openalex.org/W6780393759"],"related_works":["https://openalex.org/W3006055514","https://openalex.org/W2785588703","https://openalex.org/W3184774783","https://openalex.org/W2165735767","https://openalex.org/W1518600933","https://openalex.org/W3184271601","https://openalex.org/W2144730511","https://openalex.org/W3211972577","https://openalex.org/W4290997835","https://openalex.org/W2799235071"],"abstract_inverted_index":{"We":[0,19],"present":[1],"a":[2,17],"new,":[3],"pulsed-gate":[4],"stress":[5],"test":[6,26],"approach":[7],"to":[8],"determine":[9],"electrical":[10],"parameter":[11,33],"stability":[12],"of":[13,24],"SiC":[14,39],"MOSFETs":[15],"over":[16],"lifetime.":[18],"demonstrate":[20],"that":[21,35],"the":[22],"results":[23],"our":[25],"procedure":[27],"reflect":[28],"most":[29],"realistically":[30],"worst-case,":[31],"end-of-life":[32],"drifts":[34],"occur":[36],"in":[37],"typical":[38],"MOSFET":[40],"switching":[41],"applications.":[42]},"counts_by_year":[{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":12},{"year":2023,"cited_by_count":8},{"year":2022,"cited_by_count":6},{"year":2021,"cited_by_count":2}],"updated_date":"2026-02-26T06:29:33.603293","created_date":"2025-10-10T00:00:00"}