{"id":"https://openalex.org/W3157699672","doi":"https://doi.org/10.1109/irps46558.2021.9405185","title":"Traps Based Reliability Barrier on Performance and Revealing Early Ageing in Negative Capacitance FET","display_name":"Traps Based Reliability Barrier on Performance and Revealing Early Ageing in Negative Capacitance FET","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3157699672","doi":"https://doi.org/10.1109/irps46558.2021.9405185","mag":"3157699672"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405185","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405185","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083163437","display_name":"Aniket Gupta","orcid":"https://orcid.org/0000-0001-9158-5371"},"institutions":[{"id":"https://openalex.org/I4400573290","display_name":"National Institute of Technology Uttarakhand","ror":"https://ror.org/05pet6f20","country_code":null,"type":"education","lineage":["https://openalex.org/I4400573290"]},{"id":"https://openalex.org/I8778637","display_name":"National Institute of Technology Srinagar","ror":"https://ror.org/03sfwvw54","country_code":"IN","type":"education","lineage":["https://openalex.org/I4210152752","https://openalex.org/I8778637"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Aniket Gupta","raw_affiliation_strings":["National Institute of Technology, Uttarakhand, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Technology, Uttarakhand, India","institution_ids":["https://openalex.org/I4400573290","https://openalex.org/I8778637"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019997226","display_name":"Govind Bajpai","orcid":null},"institutions":[{"id":"https://openalex.org/I4400573290","display_name":"National Institute of Technology Uttarakhand","ror":"https://ror.org/05pet6f20","country_code":null,"type":"education","lineage":["https://openalex.org/I4400573290"]},{"id":"https://openalex.org/I8778637","display_name":"National Institute of Technology Srinagar","ror":"https://ror.org/03sfwvw54","country_code":"IN","type":"education","lineage":["https://openalex.org/I4210152752","https://openalex.org/I8778637"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Govind Bajpai","raw_affiliation_strings":["National Institute of Technology, Uttarakhand, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Technology, Uttarakhand, India","institution_ids":["https://openalex.org/I4400573290","https://openalex.org/I8778637"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002809683","display_name":"Priyanshi Singhal","orcid":null},"institutions":[{"id":"https://openalex.org/I4400573290","display_name":"National Institute of Technology Uttarakhand","ror":"https://ror.org/05pet6f20","country_code":null,"type":"education","lineage":["https://openalex.org/I4400573290"]},{"id":"https://openalex.org/I8778637","display_name":"National Institute of Technology Srinagar","ror":"https://ror.org/03sfwvw54","country_code":"IN","type":"education","lineage":["https://openalex.org/I4210152752","https://openalex.org/I8778637"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Priyanshi Singhal","raw_affiliation_strings":["National Institute of Technology, Uttarakhand, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Technology, Uttarakhand, India","institution_ids":["https://openalex.org/I4400573290","https://openalex.org/I8778637"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046778473","display_name":"Navjeet Bagga","orcid":"https://orcid.org/0000-0001-7859-5903"},"institutions":[{"id":"https://openalex.org/I207223250","display_name":"Indian Institute of Information Technology Design and Manufacturing Jabalpur","ror":"https://ror.org/00gmd7q80","country_code":"IN","type":"education","lineage":["https://openalex.org/I207223250"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Navjeet Bagga","raw_affiliation_strings":["PDPM-IIITDM Jabalpur, Jabalpur, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"PDPM-IIITDM Jabalpur, Jabalpur, India","institution_ids":["https://openalex.org/I207223250"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030362624","display_name":"Om Prakash","orcid":"https://orcid.org/0000-0003-1219-2700"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Om Prakash","raw_affiliation_strings":["Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017816306","display_name":"Shashank Banchhor","orcid":"https://orcid.org/0000-0002-5504-0566"},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Shashank Banchhor","raw_affiliation_strings":["Indian Institute of Technology, Roorkee, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Hussam Amrouch","orcid":null},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hussam Amrouch","raw_affiliation_strings":["Chair for Semiconductor Test and Reliability(STAR), University of Stuttgart, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chair for Semiconductor Test and Reliability(STAR), University of Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011802530","display_name":"Nitanshu Chauhan","orcid":"https://orcid.org/0000-0002-7993-3449"},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Nitanshu Chauhan","raw_affiliation_strings":["Indian Institute of Technology, Roorkee, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":5.291,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.97001828,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7038223147392273},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6220210790634155},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.6099855303764343},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5543656349182129},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5055012702941895},{"id":"https://openalex.org/keywords/polarization","display_name":"Polarization (electrochemistry)","score":0.4952041208744049},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.485825777053833},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.4693392813205719},{"id":"https://openalex.org/keywords/negative-impedance-converter","display_name":"Negative impedance converter","score":0.4474223256111145},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3039674162864685},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.2607386112213135},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.16374358534812927},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.15021231770515442},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13913974165916443},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1150820255279541},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10572192072868347},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.07408866286277771}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7038223147392273},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6220210790634155},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6099855303764343},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5543656349182129},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5055012702941895},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.4952041208744049},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.485825777053833},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4693392813205719},{"id":"https://openalex.org/C7729237","wikidata":"https://www.wikidata.org/wiki/Q1724261","display_name":"Negative impedance converter","level":4,"score":0.4474223256111145},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3039674162864685},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.2607386112213135},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.16374358534812927},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15021231770515442},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13913974165916443},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1150820255279541},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10572192072868347},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.07408866286277771},{"id":"https://openalex.org/C144655898","wikidata":"https://www.wikidata.org/wiki/Q1161128","display_name":"Voltage source","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405185","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405185","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":27,"referenced_works":["https://openalex.org/W1991891926","https://openalex.org/W2016106189","https://openalex.org/W2017926762","https://openalex.org/W2033982036","https://openalex.org/W2120347468","https://openalex.org/W2126861694","https://openalex.org/W2495023379","https://openalex.org/W2525341173","https://openalex.org/W2530130145","https://openalex.org/W2584373886","https://openalex.org/W2600478192","https://openalex.org/W2790530965","https://openalex.org/W2795401355","https://openalex.org/W2898581147","https://openalex.org/W2909668879","https://openalex.org/W2928181939","https://openalex.org/W2965104923","https://openalex.org/W3024722044","https://openalex.org/W3036444552","https://openalex.org/W3038698523","https://openalex.org/W3039323780","https://openalex.org/W3039362986","https://openalex.org/W3084085693","https://openalex.org/W4234978195","https://openalex.org/W6779635154","https://openalex.org/W6780000880","https://openalex.org/W6980969259"],"related_works":["https://openalex.org/W2750534275","https://openalex.org/W2354985527","https://openalex.org/W1996780177","https://openalex.org/W2011074861","https://openalex.org/W2910697626","https://openalex.org/W1993659809","https://openalex.org/W2955577993","https://openalex.org/W4241781859","https://openalex.org/W3086500945","https://openalex.org/W1985201589"],"abstract_inverted_index":{"Trap":[0],"charges":[1],"influence":[2],"the":[3,27,30,44,47,85,93,108,113,122,134,148],"reliability":[4,135],"of":[5,13,35,46,67,97,104,115,141,152],"semiconductor":[6],"devices,":[7],"which":[8],"is":[9],"an":[10],"essential":[11],"measure":[12],"performance":[14,45,114,151],"evaluation":[15],"especially":[16],"for":[17,26],"high-performance":[18],"circuits":[19],"and":[20,32,38,65,107,144],"safety-critical":[21],"applications.":[22],"In":[23],"this":[24],"paper":[25],"first":[28],"time,":[29],"individual":[31],"combined":[33,102],"impact":[34,140],"Si-SiO2interface":[36],"traps":[37,42,82,106,110,143],"Ferroelectric":[39],"(FE)":[40],"bulk":[41,81,109,145],"on":[43],"Negative":[48],"Capacitance":[49],"(NC)":[50],"FDSOI":[51,117],"FET":[52,118],"have":[53],"been":[54],"investigated.":[55],"Our":[56,126],"investigation":[57],"shows:":[58],"1)":[59],"The":[60,101],"high":[61],"interface":[62,105,142],"electric":[63],"field":[64,87],"variation":[66,91],"trap":[68],"induced":[69],"polarization":[70,90],"causes":[71],"early":[72],"aging":[73],"effect;":[74],"2)":[75],"Performance":[76],"degradation":[77],"due":[78,137],"to":[79,121,138],"FE":[80,94],"that":[83,133],"change":[84],"vertical":[86],"distribution":[88],"through":[89],"in":[92],"oxide":[95],"layer":[96],"NC-pFDSOI":[98],"FET;":[99],"3)":[100],"effect":[103],"predominantly":[111],"degrades":[112],"NC":[116],"as":[119],"compared":[120],"baseline":[123],"pFDSOI":[124],"FET.":[125],"results":[127],"using":[128],"well-calibrated":[129],"TCAD":[130],"models":[131],"reveal":[132],"barrier":[136],"joint":[139],"traps,":[146],"limits":[147],"low":[149],"power":[150],"NCFET.":[153]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":5}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}