{"id":"https://openalex.org/W3158569786","doi":"https://doi.org/10.1109/irps46558.2021.9405176","title":"Effect of interface and bulk charges on the breakdown of nitrided gate oxide on 4H-SiC","display_name":"Effect of interface and bulk charges on the breakdown of nitrided gate oxide on 4H-SiC","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3158569786","doi":"https://doi.org/10.1109/irps46558.2021.9405176","mag":"3158569786"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405176","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405176","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5054698665","display_name":"B. Mazza","orcid":null},"institutions":[{"id":"https://openalex.org/I112862951","display_name":"University of Messina","ror":"https://ror.org/05ctdxz19","country_code":"IT","type":"education","lineage":["https://openalex.org/I112862951"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"B. Mazza","raw_affiliation_strings":["Universita' degli Studi di Messina, Messina, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universita' degli Studi di Messina, Messina, Italy","institution_ids":["https://openalex.org/I112862951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004222851","display_name":"Salvatore Patan\u00e8","orcid":"https://orcid.org/0000-0003-2517-0236"},"institutions":[{"id":"https://openalex.org/I112862951","display_name":"University of Messina","ror":"https://ror.org/05ctdxz19","country_code":"IT","type":"education","lineage":["https://openalex.org/I112862951"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"S. Patane","raw_affiliation_strings":["Universita' degli Studi di Messina, Messina, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universita' degli Studi di Messina, Messina, Italy","institution_ids":["https://openalex.org/I112862951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011472738","display_name":"Francesco Cordiano","orcid":"https://orcid.org/0000-0001-9569-5674"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"F. Cordiano","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044032034","display_name":"M. Giliberto","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Giliberto","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108528762","display_name":"G. Renna","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Renna","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":null,"display_name":"A. Severino","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Severino","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029620691","display_name":"Edoardo Zanetti","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E. Zanetti","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061442901","display_name":"M. Boscaglia","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Boscaglia","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109660026","display_name":"G. Franco","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Franco","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.407,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.43765996,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":"5","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9922000169754028,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.742278516292572},{"id":"https://openalex.org/keywords/nitriding","display_name":"Nitriding","score":0.6930844187736511},{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.6832304000854492},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5847052335739136},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.57951819896698},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5786306858062744},{"id":"https://openalex.org/keywords/limiting","display_name":"Limiting","score":0.5521848201751709},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.48580121994018555},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4762956202030182},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4669222831726074},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.46559011936187744},{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.42597177624702454},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.374217689037323},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.2874944508075714},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2789560556411743},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19950515031814575},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13942080736160278},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.10757708549499512},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.09189411997795105},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.07836773991584778},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07057252526283264}],"concepts":[{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.742278516292572},{"id":"https://openalex.org/C13862629","wikidata":"https://www.wikidata.org/wiki/Q720899","display_name":"Nitriding","level":3,"score":0.6930844187736511},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.6832304000854492},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5847052335739136},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.57951819896698},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5786306858062744},{"id":"https://openalex.org/C188198153","wikidata":"https://www.wikidata.org/wiki/Q1613840","display_name":"Limiting","level":2,"score":0.5521848201751709},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.48580121994018555},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4762956202030182},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4669222831726074},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46559011936187744},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.42597177624702454},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.374217689037323},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.2874944508075714},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2789560556411743},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19950515031814575},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13942080736160278},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10757708549499512},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.09189411997795105},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.07836773991584778},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07057252526283264},{"id":"https://openalex.org/C28413391","wikidata":"https://www.wikidata.org/wiki/Q785542","display_name":"Capillary number","level":3,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C196806460","wikidata":"https://www.wikidata.org/wiki/Q188603","display_name":"Capillary action","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405176","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405176","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1977217094","https://openalex.org/W1983682160","https://openalex.org/W1986779381","https://openalex.org/W2052741577","https://openalex.org/W2081048183","https://openalex.org/W2083787975","https://openalex.org/W2116715430","https://openalex.org/W2155968399","https://openalex.org/W2810826826","https://openalex.org/W2963265161","https://openalex.org/W4245755231"],"related_works":["https://openalex.org/W2099624314","https://openalex.org/W2539595190","https://openalex.org/W2106473374","https://openalex.org/W3160961382","https://openalex.org/W3038423925","https://openalex.org/W2077805257","https://openalex.org/W4229016249","https://openalex.org/W2150292786","https://openalex.org/W2311850564","https://openalex.org/W2361669760"],"abstract_inverted_index":{"The":[0],"disadvantage":[1],"of":[2,36,62],"4H-SiC/SiO2compared":[3],"to":[4,23,45,60],"the":[5,8,13,34,37,49,53],"Si/SiO2interface":[6],"is":[7,33],"high":[9],"trap":[10],"density":[11],"limiting":[12],"channel":[14],"mobility":[15],"and":[16,20,47,68],"gate":[17,76],"oxide":[18,65,77],"stability":[19],"often":[21],"leads":[22],"early":[24],"failure":[25],"in":[26],"power":[27],"MOSFETs.":[28],"One":[29],"important":[30],"process":[31],"improvement":[32],"nitridation":[35,50,58],"oxide.":[38],"In":[39],"this":[40],"work,":[41],"we":[42],"investigate":[43],"techniques":[44],"characterize":[46],"quantify":[48],"effect,":[51],"validating":[52],"better":[54],"performance":[55],"after":[56],"NO":[57],"due":[59],"passivation":[61],"near":[63],"interface":[64],"traps":[66],"(NIOTs)":[67],"bulk":[69],"charges":[70],"as":[71,73],"well":[72],"an":[74],"improved":[75],"reliability.":[78]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}