{"id":"https://openalex.org/W3158052698","doi":"https://doi.org/10.1109/irps46558.2021.9405170","title":"Gate Driver Protection Methods for SiC MOSFET Short Circuit Testing","display_name":"Gate Driver Protection Methods for SiC MOSFET Short Circuit Testing","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3158052698","doi":"https://doi.org/10.1109/irps46558.2021.9405170","mag":"3158052698"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405170","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405170","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084510896","display_name":"Jairo Nevarez","orcid":null},"institutions":[{"id":"https://openalex.org/I4210109581","display_name":"Wolfspeed, Inc. (United States)","ror":"https://ror.org/02127h732","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109581"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Jairo Nevarez","raw_affiliation_strings":["Wolfspeed \u2013 A Cree Company, NC, USA"],"affiliations":[{"raw_affiliation_string":"Wolfspeed \u2013 A Cree Company, NC, USA","institution_ids":["https://openalex.org/I4210109581"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043208077","display_name":"Anthony Olmedo","orcid":null},"institutions":[{"id":"https://openalex.org/I4210109581","display_name":"Wolfspeed, Inc. (United States)","ror":"https://ror.org/02127h732","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109581"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Anthony Olmedo","raw_affiliation_strings":["Wolfspeed \u2013 A Cree Company, NC, USA"],"affiliations":[{"raw_affiliation_string":"Wolfspeed \u2013 A Cree Company, NC, USA","institution_ids":["https://openalex.org/I4210109581"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041941071","display_name":"Rachel Williams","orcid":null},"institutions":[{"id":"https://openalex.org/I4210109581","display_name":"Wolfspeed, Inc. (United States)","ror":"https://ror.org/02127h732","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109581"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rachel Williams","raw_affiliation_strings":["Wolfspeed \u2013 A Cree Company, NC, USA"],"affiliations":[{"raw_affiliation_string":"Wolfspeed \u2013 A Cree Company, NC, USA","institution_ids":["https://openalex.org/I4210109581"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5074391492","display_name":"Polina Pechnikova","orcid":null},"institutions":[{"id":"https://openalex.org/I4210109581","display_name":"Wolfspeed, Inc. (United States)","ror":"https://ror.org/02127h732","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109581"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Polina Pechnikova","raw_affiliation_strings":["Wolfspeed \u2013 A Cree Company, NC, USA"],"affiliations":[{"raw_affiliation_string":"Wolfspeed \u2013 A Cree Company, NC, USA","institution_ids":["https://openalex.org/I4210109581"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5084510896"],"corresponding_institution_ids":["https://openalex.org/I4210109581"],"apc_list":null,"apc_paid":null,"fwci":0.3033,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.55113354,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.7732466459274292},{"id":"https://openalex.org/keywords/zener-diode","display_name":"Zener diode","score":0.7434811592102051},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6595615148544312},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5721747279167175},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5483307838439941},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5209935307502747},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4385487139225006},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.43536296486854553},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.36455023288726807},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2650092840194702},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.23719733953475952},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22195583581924438}],"concepts":[{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.7732466459274292},{"id":"https://openalex.org/C50566616","wikidata":"https://www.wikidata.org/wiki/Q180586","display_name":"Zener diode","level":4,"score":0.7434811592102051},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6595615148544312},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5721747279167175},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5483307838439941},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5209935307502747},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4385487139225006},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.43536296486854553},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.36455023288726807},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2650092840194702},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.23719733953475952},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22195583581924438}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405170","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405170","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5400000214576721,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1919271007","https://openalex.org/W2602597006","https://openalex.org/W2897806593","https://openalex.org/W2904310390"],"related_works":["https://openalex.org/W2154820431","https://openalex.org/W2038712671","https://openalex.org/W1868938552","https://openalex.org/W1846049281","https://openalex.org/W2156775038","https://openalex.org/W2486984545","https://openalex.org/W2316973003","https://openalex.org/W2589023056","https://openalex.org/W4200313463","https://openalex.org/W2785588703"],"abstract_inverted_index":{"Short":[0],"Circuit":[1],"testing":[2],"can":[3,40,69],"cause":[4],"stress":[5],"to":[6,21,28,45,92],"gate":[7,12,48,94],"drivers,":[8],"but":[9],"common,":[10],"current":[11],"driver":[13,95],"protection":[14,20,49],"methods":[15,32,50],"do":[16],"not":[17],"offer":[18],"sufficient":[19],"the":[22,31,46,59],"test":[23,56],"circuit.":[24],"Simulations":[25],"were":[26],"created":[27],"demonstrate":[29],"that":[30],"using":[33],"Zener":[34,66],"diodes":[35],"or":[36,77],"a":[37,80],"gate-source":[38,83],"capacitor":[39,84],"be":[41,70],"implemented":[42],"in":[43,52,72],"addition":[44],"common":[47],"resulting":[51],"an":[53,87],"accurate,":[54],"equivalent":[55],"performance":[57],"with":[58],"added":[60],"benefit":[61],"of":[62,79],"additional":[63,93],"protection.":[64,96],"The":[65,82],"diode":[67],"method":[68],"useful":[71],"determining":[73],"failures":[74],"during":[75],"turn-off":[76],"turn-on":[78],"device.":[81],"solution":[85,91],"offers":[86],"economical":[88],"and":[89],"simple":[90]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2026-03-13T16:22:10.518609","created_date":"2025-10-10T00:00:00"}
