{"id":"https://openalex.org/W3158588984","doi":"https://doi.org/10.1109/irps46558.2021.9405165","title":"Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination","display_name":"Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3158588984","doi":"https://doi.org/10.1109/irps46558.2021.9405165","mag":"3158588984"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405165","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405165","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023656099","display_name":"Ke Zeng","orcid":"https://orcid.org/0000-0001-5619-6418"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ke Zeng","raw_affiliation_strings":["Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036450839","display_name":"Srabanti Chowdhury","orcid":"https://orcid.org/0000-0001-8367-0461"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Srabanti Chowdhury","raw_affiliation_strings":["Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University,Department of Electrical Engineering,Stanford,CA,USA,94305","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043412956","display_name":"Brendan Gunning","orcid":"https://orcid.org/0000-0002-0497-5388"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Brendan Gunning","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006920397","display_name":"Robert Kaplar","orcid":"https://orcid.org/0000-0002-7928-9104"},"institutions":[{"id":"https://openalex.org/I4210104735","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I198811213","https://openalex.org/I4210104735"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Robert Kaplar","raw_affiliation_strings":["Sandia National Labs,Albuquerque,NM,USA,87123"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sandia National Labs,Albuquerque,NM,USA,87123","institution_ids":["https://openalex.org/I4210104735"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5046116823","display_name":"Travis J. Anderson","orcid":"https://orcid.org/0000-0002-7248-1339"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Travis Anderson","raw_affiliation_strings":["Naval Research Lab,Washington, DC,USA,20375"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Naval Research Lab,Washington, DC,USA,20375","institution_ids":["https://openalex.org/I1288214837"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.7734,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.84108108,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bevel","display_name":"Bevel","score":0.8303629159927368},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.7132590413093567},{"id":"https://openalex.org/keywords/electroluminescence","display_name":"Electroluminescence","score":0.6589706540107727},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.6315687894821167},{"id":"https://openalex.org/keywords/enhanced-data-rates-for-gsm-evolution","display_name":"Enhanced Data Rates for GSM Evolution","score":0.5456089377403259},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.5418754816055298},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.530928909778595},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4858526885509491},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.43565788865089417},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.4170834422111511},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.3868127465248108},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3631972670555115},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3600793480873108},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.31773674488067627},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2183111608028412},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.19749826192855835},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.18844819068908691},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.14895546436309814},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12354573607444763},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.11397191882133484},{"id":"https://openalex.org/keywords/chromatography","display_name":"Chromatography","score":0.1011073887348175}],"concepts":[{"id":"https://openalex.org/C116017498","wikidata":"https://www.wikidata.org/wiki/Q1903785","display_name":"Bevel","level":2,"score":0.8303629159927368},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.7132590413093567},{"id":"https://openalex.org/C31625292","wikidata":"https://www.wikidata.org/wiki/Q215803","display_name":"Electroluminescence","level":3,"score":0.6589706540107727},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6315687894821167},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.5456089377403259},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5418754816055298},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.530928909778595},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4858526885509491},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.43565788865089417},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4170834422111511},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3868127465248108},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3631972670555115},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3600793480873108},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.31773674488067627},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2183111608028412},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.19749826192855835},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.18844819068908691},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14895546436309814},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12354573607444763},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.11397191882133484},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.1011073887348175}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405165","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405165","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G7166948679","display_name":null,"funder_award_id":"DE-NA-0003525","funder_id":"https://openalex.org/F4320332369","funder_display_name":"National Nuclear Security Administration"}],"funders":[{"id":"https://openalex.org/F4320332276","display_name":"Advanced Research Projects Agency - Energy","ror":"https://ror.org/03q1rgc19"},{"id":"https://openalex.org/F4320332369","display_name":"National Nuclear Security Administration","ror":"https://ror.org/03sk1we31"},{"id":"https://openalex.org/F4320337345","display_name":"Office of Naval Research","ror":"https://ror.org/00rk2pe57"},{"id":"https://openalex.org/F4320338291","display_name":"Sandia National Laboratories","ror":"https://ror.org/01apwpt12"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1657876367","https://openalex.org/W1950219146","https://openalex.org/W2275658335","https://openalex.org/W2789274637","https://openalex.org/W2941312929","https://openalex.org/W2947968959","https://openalex.org/W2995833747","https://openalex.org/W3023945859"],"related_works":["https://openalex.org/W2150038201","https://openalex.org/W940975362","https://openalex.org/W1482121407","https://openalex.org/W4385811561","https://openalex.org/W2029309453","https://openalex.org/W2163111162","https://openalex.org/W2076035440","https://openalex.org/W2058443408","https://openalex.org/W4386105518","https://openalex.org/W3158588984"],"abstract_inverted_index":{"GaN":[0],"vertical":[1],"PIN":[2],"diodes":[3],"with":[4,15,50,65],"different":[5],"bevel":[6,68,75,88,128],"edge":[7,76,135],"termination":[8,77],"angles":[9],"were":[10,33,48],"fabricated":[11],"on":[12],"three":[13],"wafers":[14],"varying":[16],"p-layer":[17,83,115],"doping":[18,54,84,116],"concentrations,":[19],"respectively.":[20],"The":[21,40],"breakdown":[22,28,43,46,96,101],"behavior":[23],"in":[24],"terms":[25],"of":[26,37,55,73,117],"the":[27,31,51,66,71,74,87,92,127],"voltage":[29,47],"and":[30,44,64,86,98],"electroluminescence":[32],"studied":[34],"as":[35],"functions":[36],"these":[38,79],"variables.":[39],"repeatable":[41],"avalanche":[42],"highest":[45],"measured":[49],"lowest":[52,67],"p":[53],"3\u00d710":[56],"<sup":[57,61,119,123],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[58,62,120,124],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">17</sup>":[59],"cm":[60,122],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-3</sup>":[63,125],"angle,":[69],"indicating":[70],"efficacy":[72],"under":[78],"specific":[80],"circumstances.":[81],"As":[82],"increases":[85],"angle":[89],"becomes":[90],"steeper,":[91],"devices":[93],"exhibit":[94],"lower":[95],"voltages":[97],"less":[99],"robust":[100],"characteristic,":[102],"often":[103],"destructive.":[104],"From":[105],"this":[106],"study,":[107],"we":[108],"also":[109],"conclude":[110],"that":[111],"at":[112],"very":[113],"high":[114],"2\u00d710":[118],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">19</sup>":[121],",":[126],"etch":[129],"alone":[130],"cannot":[131],"provide":[132],"an":[133],"effective":[134],"termination.":[136]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}