{"id":"https://openalex.org/W3157891111","doi":"https://doi.org/10.1109/irps46558.2021.9405156","title":"Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM","display_name":"Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3157891111","doi":"https://doi.org/10.1109/irps46558.2021.9405156","mag":"3157891111"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405156","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405156","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043733365","display_name":"P. M. Solomon","orcid":"https://orcid.org/0000-0003-3279-2092"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Paul M. Solomon","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056893237","display_name":"Douglas M. Bishop","orcid":"https://orcid.org/0000-0002-2924-6376"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Douglas M. Bishop","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061728090","display_name":"Teodor K. Todorov","orcid":"https://orcid.org/0000-0003-3234-1611"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Teodor K. Todorov","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023856853","display_name":"Simon Dawes","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Simon Dawes","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053818559","display_name":"Damon B. Farmer","orcid":"https://orcid.org/0000-0002-2999-2109"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Damon B. Farmer","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028524575","display_name":"M. Copel","orcid":"https://orcid.org/0000-0002-7729-2748"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Matthew Copel","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074146338","display_name":"Ko\u2010Tao Lee","orcid":"https://orcid.org/0000-0001-5957-0989"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ko-Tao Lee","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013110477","display_name":"John P. Collins","orcid":"https://orcid.org/0000-0002-5957-6923"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John Collins","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111569009","display_name":"John Rozen","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John Rozen","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA","institution_ids":["https://openalex.org/I4210114115"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5043733365"],"corresponding_institution_ids":["https://openalex.org/I4210114115"],"apc_list":null,"apc_paid":null,"fwci":1.0027,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.75068559,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.7003470659255981},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.672802746295929},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6394065022468567},{"id":"https://openalex.org/keywords/computation","display_name":"Computation","score":0.6070777773857117},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.5996131300926208},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5855275392532349},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.47491371631622314},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4033240079879761},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3478948771953583},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.32140862941741943},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.264004647731781},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14392247796058655},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.12439858913421631}],"concepts":[{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.7003470659255981},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.672802746295929},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6394065022468567},{"id":"https://openalex.org/C45374587","wikidata":"https://www.wikidata.org/wiki/Q12525525","display_name":"Computation","level":2,"score":0.6070777773857117},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.5996131300926208},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5855275392532349},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.47491371631622314},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4033240079879761},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3478948771953583},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.32140862941741943},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.264004647731781},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14392247796058655},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.12439858913421631},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405156","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405156","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W71636809","https://openalex.org/W2000328263","https://openalex.org/W2001607685","https://openalex.org/W2004376756","https://openalex.org/W2004823737","https://openalex.org/W2011767069","https://openalex.org/W2030147384","https://openalex.org/W2063040771","https://openalex.org/W2112796928","https://openalex.org/W2163573532","https://openalex.org/W2307193480","https://openalex.org/W2552299751","https://openalex.org/W2591029953","https://openalex.org/W2721300650","https://openalex.org/W2902449837","https://openalex.org/W2912495531","https://openalex.org/W2942216650","https://openalex.org/W2944114583","https://openalex.org/W2963387357","https://openalex.org/W3006607400","https://openalex.org/W3123063561"],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W4386230336","https://openalex.org/W4306968100","https://openalex.org/W2171986175","https://openalex.org/W2089791793","https://openalex.org/W2358137648","https://openalex.org/W2038858740","https://openalex.org/W1491218245"],"abstract_inverted_index":{"Metal-oxide":[0],"based":[1],"Electrochemical":[2],"Random-Access":[3],"Memory":[4],"(MO-ECRAM)":[5],"has":[6],"shown":[7,50],"unique":[8],"potential":[9],"as":[10],"a":[11,23,85,90],"nonvolatile":[12],"element":[13],"for":[14],"analog":[15],"in-memory":[16],"computation":[17],"of":[18,33,71,80,97,106],"deep":[19],"learning":[20,123],"tasks.":[21],"Using":[22],"specially":[24],"designed":[25],"interdigitated":[26],"device":[27,120],"geometry,":[28],"we":[29,117],"investigate":[30],"transient":[31,115],"effects":[32],"MO-ECRAM":[34],"and":[35,43,89,113,122],"correlate":[36],"them":[37],"with":[38,54],"programming":[39,55],"speed,":[40],"read":[41],"speed":[42,48,58],"read-after":[44],"write":[45,72],"speed.":[46],"Programming":[47],"is":[49],"to":[51,111],"exponentially":[52],"increase":[53],"voltage.":[56],"Read":[57],"reached":[59],"the":[60,75,98,107],"ns":[61],"range,":[62],"while":[63],"read-after-write":[64],"delay":[65],"can":[66],"be":[67],"limited":[68],"by":[69],"decay":[70],"transients":[73],"in":[74],"studied":[76],"devices.":[77],"Two":[78],"mechanisms":[79],"channel":[81],"modulation":[82],"were":[83],"found;":[84],"prompt":[86,99],"field":[87],"effect":[88,100],"field-induced":[91],"memory":[92,108],"effect.":[93,109],"The":[94],"charge":[95],"control":[96],"was":[101],"vastly":[102],"greater":[103],"than":[104],"that":[105],"So":[110],"reduce":[112],"mitigate":[114],"impact,":[116],"discuss":[118],"both":[119],"improvements,":[121],"algorithm":[124],"engineering":[125],"strategies.":[126]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}