{"id":"https://openalex.org/W3158545640","doi":"https://doi.org/10.1109/irps46558.2021.9405148","title":"Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects","display_name":"Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3158545640","doi":"https://doi.org/10.1109/irps46558.2021.9405148","mag":"3158545640"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405148","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405148","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5090250731","display_name":"Patrick Fiorenza","orcid":"https://orcid.org/0000-0002-9633-7892"},"institutions":[{"id":"https://openalex.org/I4210165120","display_name":"Institute for Microelectronics and Microsystems","ror":"https://ror.org/05vk2g845","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210165120"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"P. Fiorenza","raw_affiliation_strings":["Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Catania, Italy"],"affiliations":[{"raw_affiliation_string":"Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Catania, Italy","institution_ids":["https://openalex.org/I4210165120"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087239883","display_name":"Salvatore Adamo","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"S. Adamo","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015868368","display_name":"Mario S. Alessandrino","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. S. Alessandrino","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003033628","display_name":"C. Bottari","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"C. Bottari","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111664370","display_name":"B. Carbone","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"B. Carbone","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072497781","display_name":"Clarice Di Martino","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"C. Di Martino","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110494483","display_name":"Alfio Russo","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Russo","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018760551","display_name":"Mario Saggio","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Saggio","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070023219","display_name":"C. Venuto","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"C. Venuto","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001464300","display_name":"Elisa Vitanza","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E. Vitanza","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029620691","display_name":"Edoardo Zanetti","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E. Zanetti","raw_affiliation_strings":["STMicroelectronics, Catania, Italy"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049003724","display_name":"Filippo Giannazzo","orcid":"https://orcid.org/0000-0002-0074-0469"},"institutions":[{"id":"https://openalex.org/I4210165120","display_name":"Institute for Microelectronics and Microsystems","ror":"https://ror.org/05vk2g845","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210165120"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"F. Giannazzo","raw_affiliation_strings":["Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Catania, Italy"],"affiliations":[{"raw_affiliation_string":"Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Catania, Italy","institution_ids":["https://openalex.org/I4210165120"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003937299","display_name":"Fabrizio Roccaforte","orcid":"https://orcid.org/0000-0001-8632-0870"},"institutions":[{"id":"https://openalex.org/I4210165120","display_name":"Institute for Microelectronics and Microsystems","ror":"https://ror.org/05vk2g845","country_code":"IT","type":"facility","lineage":["https://openalex.org/I4210155236","https://openalex.org/I4210165120"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"F. Roccaforte","raw_affiliation_strings":["Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Catania, Italy"],"affiliations":[{"raw_affiliation_string":"Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Catania, Italy","institution_ids":["https://openalex.org/I4210165120"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":13,"corresponding_author_ids":["https://openalex.org/A5090250731"],"corresponding_institution_ids":["https://openalex.org/I4210165120"],"apc_list":null,"apc_paid":null,"fwci":0.3008,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.54764808,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.992900013923645,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.812857449054718},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.7956734299659729},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6464167833328247},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6310313940048218},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.5489665269851685},{"id":"https://openalex.org/keywords/dislocation","display_name":"Dislocation","score":0.48290157318115234},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.4827384352684021},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.46563899517059326},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.4208589792251587},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.38888341188430786},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.19435063004493713},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.16918215155601501},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16770091652870178},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0949999988079071}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.812857449054718},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7956734299659729},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6464167833328247},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6310313940048218},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5489665269851685},{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.48290157318115234},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.4827384352684021},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.46563899517059326},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4208589792251587},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.38888341188430786},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19435063004493713},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.16918215155601501},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16770091652870178},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0949999988079071},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405148","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405148","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2037617723","https://openalex.org/W2053794197","https://openalex.org/W2058564794","https://openalex.org/W2089313388","https://openalex.org/W2091749383","https://openalex.org/W2092874501","https://openalex.org/W2942074270","https://openalex.org/W2949728079","https://openalex.org/W2995373565","https://openalex.org/W3096692157","https://openalex.org/W3100550449"],"related_works":["https://openalex.org/W1998662473","https://openalex.org/W2075391483","https://openalex.org/W2038820605","https://openalex.org/W2129617696","https://openalex.org/W2742348144","https://openalex.org/W2121416564","https://openalex.org/W1985417357","https://openalex.org/W2955207210","https://openalex.org/W2371613304","https://openalex.org/W1541648135"],"abstract_inverted_index":{"In":[0,60,134],"this":[1,135],"work,":[2],"the":[3,11,18,28,38,46,56,62,78,93,109,112,118,129,137,141,144],"breakdown":[4,94,146],"of":[5,13,40,80,111,124,140,147],"4H-SiC":[6,19,131,148],"MOSFETs":[7],"was":[8,52,89,150],"correlated":[9],"with":[10],"presence":[12,39,79],"different":[14],"crystalline":[15],"defects":[16],"in":[17,23,128,143],"epitaxial":[20,132],"layer.":[21,133],"First,":[22],"a":[24,81,85],"wafer":[25],"level":[26],"characterization,":[27],"devices":[29,63],"not":[30],"working":[31],"at":[32,92],"t":[33],"=":[34],"0":[35],"s":[36],"showed":[37],"down-falls":[41],"and":[42,77],"were":[43],"discarded.":[44],"Then,":[45],"Fowler-Nordheim":[47],"(FN)":[48],"gate":[49,68],"bias":[50,69,100],"conduction":[51],"used":[53],"to":[54,117,121],"screen":[55],"remaining":[57],"packaged":[58],"MOSFETs.":[59],"particular,":[61],"failing":[64],"under":[65],"high":[66,97],"temperature":[67,98],"(HTGB)":[70],"stress":[71],"exhibited":[72],"an":[73],"anomalous":[74],"FN":[75],"behavior":[76],"surface":[82],"bump.":[83],"Finally,":[84],"threading":[86],"dislocation":[87],"(TD)":[88],"systematically":[90],"found":[91],"location":[95],"during":[96],"reverse":[99],"(HTRB)":[101],"stress.":[102],"Scanning":[103],"probe":[104],"microscopy":[105],"(SPM)":[106],"techniques":[107],"revealed":[108],"increase":[110],"minority":[113],"carrier":[114],"concentration":[115],"close":[116],"defect":[119],"up":[120],"13":[122],"orders":[123],"magnitude":[125],"larger":[126],"than":[127],"ideal":[130],"way,":[136],"key":[138],"role":[139],"TD":[142],"dielectric":[145],"MOSFET":[149],"unambiguously":[151],"demonstrated.":[152]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}