{"id":"https://openalex.org/W3157120434","doi":"https://doi.org/10.1109/irps46558.2021.9405147","title":"Peculiar Current Instabilities & Failure Mechanism in Vertically Stacked Nanosheet ggN-FET","display_name":"Peculiar Current Instabilities & Failure Mechanism in Vertically Stacked Nanosheet ggN-FET","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3157120434","doi":"https://doi.org/10.1109/irps46558.2021.9405147","mag":"3157120434"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405147","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405147","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006796284","display_name":"M. Monishmurali","orcid":null},"institutions":[{"id":"https://openalex.org/I59270414","display_name":"Indian Institute of Science Bangalore","ror":"https://ror.org/04dese585","country_code":"IN","type":"education","lineage":["https://openalex.org/I59270414"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"M Monishmurali","raw_affiliation_strings":["Indian Institute of Science, Bangalore, Karnataka, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Indian Institute of Science, Bangalore, Karnataka, India","institution_ids":["https://openalex.org/I59270414"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031450949","display_name":"Mayank Shrivastava","orcid":"https://orcid.org/0000-0003-1005-040X"},"institutions":[{"id":"https://openalex.org/I59270414","display_name":"Indian Institute of Science Bangalore","ror":"https://ror.org/04dese585","country_code":"IN","type":"education","lineage":["https://openalex.org/I59270414"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Mayank Shrivastava","raw_affiliation_strings":["Indian Institute of Science, Bangalore, Karnataka, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Indian Institute of Science, Bangalore, Karnataka, India","institution_ids":["https://openalex.org/I59270414"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I59270414"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanosheet","display_name":"Nanosheet","score":0.8103464841842651},{"id":"https://openalex.org/keywords/instability","display_name":"Instability","score":0.7567845582962036},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6770039200782776},{"id":"https://openalex.org/keywords/fin","display_name":"Fin","score":0.6406292915344238},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.5988353490829468},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.5271769762039185},{"id":"https://openalex.org/keywords/snapback","display_name":"Snapback","score":0.49954962730407715},{"id":"https://openalex.org/keywords/protein-filament","display_name":"Protein filament","score":0.44449084997177124},{"id":"https://openalex.org/keywords/turn","display_name":"Turn (biochemistry)","score":0.42219099402427673},{"id":"https://openalex.org/keywords/mechanics","display_name":"Mechanics","score":0.40139469504356384},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.3844762444496155},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.3540835976600647},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.33836424350738525},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3349844813346863},{"id":"https://openalex.org/keywords/structural-engineering","display_name":"Structural engineering","score":0.32037824392318726},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2885773181915283},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23141741752624512},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21210181713104248},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14145123958587646},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07746726274490356}],"concepts":[{"id":"https://openalex.org/C51967427","wikidata":"https://www.wikidata.org/wiki/Q17148232","display_name":"Nanosheet","level":2,"score":0.8103464841842651},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.7567845582962036},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6770039200782776},{"id":"https://openalex.org/C91721477","wikidata":"https://www.wikidata.org/wiki/Q778612","display_name":"Fin","level":2,"score":0.6406292915344238},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5988353490829468},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.5271769762039185},{"id":"https://openalex.org/C2779888857","wikidata":"https://www.wikidata.org/wiki/Q18378810","display_name":"Snapback","level":4,"score":0.49954962730407715},{"id":"https://openalex.org/C14228908","wikidata":"https://www.wikidata.org/wiki/Q2920483","display_name":"Protein filament","level":2,"score":0.44449084997177124},{"id":"https://openalex.org/C85641259","wikidata":"https://www.wikidata.org/wiki/Q290042","display_name":"Turn (biochemistry)","level":2,"score":0.42219099402427673},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.40139469504356384},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.3844762444496155},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.3540835976600647},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.33836424350738525},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3349844813346863},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.32037824392318726},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2885773181915283},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23141741752624512},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21210181713104248},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14145123958587646},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07746726274490356},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405147","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405147","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2046434968","https://openalex.org/W2583183384","https://openalex.org/W2585814860","https://openalex.org/W2744406216","https://openalex.org/W2787656113"],"related_works":["https://openalex.org/W2987824601","https://openalex.org/W2896326687","https://openalex.org/W2982261582","https://openalex.org/W2617002116","https://openalex.org/W2060497665","https://openalex.org/W2896060905","https://openalex.org/W2287188040","https://openalex.org/W2185679239","https://openalex.org/W1976124171","https://openalex.org/W3157120434"],"abstract_inverted_index":{"The":[0],"behavior":[1],"of":[2,36,52,55,75,140],"gate":[3],"grounded":[4],"vertically":[5],"stacked":[6],"nanosheet":[7],"N-FET":[8],"(ggNFET)":[9],"under":[10],"ESD":[11],"stress":[12],"is":[13],"investigated":[14],"in":[15,27,136],"this":[16,59,129],"work.":[17],"Single":[18],"Fin":[19,119],"(3-Sheet)":[20],"ggNFET":[21,92],"devices":[22],"exhibit":[23],"multiple":[24],"instability":[25,60,110],"points":[26],"the":[28,32,53,70,73,83,97,141],"TLP-IV":[29],"characteristic":[30],"around":[31],"snapback":[33],"region.":[34],"Each":[35],"these":[37],"instabilities":[38],"was":[39,50,61,77,93,132],"found":[40,78],"to":[41,45,79,95,112,125,134],"be":[42,80],"arising":[43],"due":[44,111],"non-uniform":[46,114,118,130],"sheet":[47,115],"turn-on":[48,76,116,131],"and":[49,117],"independent":[51],"presence":[54],"body":[56,67,124],"contact.":[57],"However,":[58],"more":[62,107],"severe,":[63],"with":[64],"a":[65,106,122],"decreased":[66],"distance":[68],"from":[69],"source.":[71],"Furthermore,":[72],"sequence":[74],"dependent":[81],"on":[82],"TLP":[84],"current":[85,98],"ramp":[86],"rate.":[87],"A":[88],"24-Fin":[89,103],"(72":[90],"Sheet)":[91],"simulated":[94],"reproduce":[96],"filament":[99],"like":[100],"behavior.":[101],"These":[102],"simulations":[104],"revealed":[105],"severe":[108],"low-current":[109],"both":[113],"turn-on.":[120],"For":[121],"smaller":[123],"source":[126],"contact":[127],"distance,":[128],"seen":[133],"result":[135],"an":[137],"early":[138],"failure":[139],"device.":[142]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2}],"updated_date":"2026-07-22T07:51:19.307946","created_date":"2025-10-10T00:00:00"}