{"id":"https://openalex.org/W3159257576","doi":"https://doi.org/10.1109/irps46558.2021.9405117","title":"Characterization of NMOS-based ESD Protection for Wide-range Pulse Immunity","display_name":"Characterization of NMOS-based ESD Protection for Wide-range Pulse Immunity","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3159257576","doi":"https://doi.org/10.1109/irps46558.2021.9405117","mag":"3159257576"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405117","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405117","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021925780","display_name":"Yasuyuki Morishita","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Yasuyuki Morishita","raw_affiliation_strings":["Renesas Electronics Corporation 5-20-1, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Electronics Corporation 5-20-1, Tokyo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007539161","display_name":"Satoshi Maeda","orcid":"https://orcid.org/0000-0001-8822-1147"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Satoshi Maeda","raw_affiliation_strings":["Renesas Electronics Corporation 5-20-1, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Electronics Corporation 5-20-1, Tokyo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5021925780"],"corresponding_institution_ids":["https://openalex.org/I4210153176"],"apc_list":null,"apc_paid":null,"fwci":0.2005,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.48941026,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.9068257808685303},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.781258225440979},{"id":"https://openalex.org/keywords/automotive-industry","display_name":"Automotive industry","score":0.7527744174003601},{"id":"https://openalex.org/keywords/pulse","display_name":"Pulse (music)","score":0.4743541479110718},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.45969146490097046},{"id":"https://openalex.org/keywords/electronic-component","display_name":"Electronic component","score":0.45953109860420227},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.44471949338912964},{"id":"https://openalex.org/keywords/range","display_name":"Range (aeronautics)","score":0.4246547818183899},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40984299778938293},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39392635226249695},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3017388582229614},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22037357091903687},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.17990145087242126},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.142753005027771},{"id":"https://openalex.org/keywords/aerospace-engineering","display_name":"Aerospace engineering","score":0.08577081561088562}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.9068257808685303},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.781258225440979},{"id":"https://openalex.org/C526921623","wikidata":"https://www.wikidata.org/wiki/Q190117","display_name":"Automotive industry","level":2,"score":0.7527744174003601},{"id":"https://openalex.org/C2780167933","wikidata":"https://www.wikidata.org/wiki/Q1550652","display_name":"Pulse (music)","level":3,"score":0.4743541479110718},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45969146490097046},{"id":"https://openalex.org/C81060104","wikidata":"https://www.wikidata.org/wiki/Q11653","display_name":"Electronic component","level":2,"score":0.45953109860420227},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.44471949338912964},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.4246547818183899},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40984299778938293},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39392635226249695},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3017388582229614},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22037357091903687},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.17990145087242126},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.142753005027771},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.08577081561088562},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405117","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405117","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6399999856948853,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1491667852","https://openalex.org/W1553649942","https://openalex.org/W1602556828","https://openalex.org/W2141256248","https://openalex.org/W2170222228","https://openalex.org/W2544692361","https://openalex.org/W6633250663","https://openalex.org/W6728688613"],"related_works":["https://openalex.org/W2217098757","https://openalex.org/W3208688275","https://openalex.org/W2992364380","https://openalex.org/W2150404448","https://openalex.org/W3038876531","https://openalex.org/W2401021868","https://openalex.org/W2507792144","https://openalex.org/W2035883040","https://openalex.org/W4234715834","https://openalex.org/W1558947540"],"abstract_inverted_index":{"Several":[0],"immunity":[1,86],"requirements":[2],"for":[3,34,48,61,83],"electronic":[4],"systems":[5],"in":[6,18,52,76],"automotive,":[7],"using":[8],"transient":[9],"pulses":[10,37,51],"with":[11],"high":[12],"energy,":[13],"often":[14],"cause":[15],"EOS":[16],"damage":[17],"automotive":[19,63],"IC":[20,26,64],"products.":[21,65],"To":[22],"improve":[23],"the":[24,35,49,62,77,84],"situation,":[25],"suppliers":[27],"need":[28],"further":[29],"understanding":[30],"of":[31,90],"device":[32],"operation":[33],"wide-range":[36,50],"beyond":[38,87],"component":[39],"level":[40],"ESD":[41,55,78],"pulses.":[42],"This":[43],"paper":[44],"provides":[45],"failure":[46],"mechanisms":[47],"5V":[53],"NMOS-based":[54],"protection":[56,79],"which":[57],"is":[58,71],"widely":[59],"used":[60],"Through":[66],"our":[67],"experimental":[68],"results,":[69],"it":[70],"clarified":[72],"that":[73],"copper":[74],"interconnects":[75],"become":[80],"more":[81],"dominant":[82],"pulse":[85],"several":[88],"tens":[89],"microseconds.":[91]},"counts_by_year":[{"year":2023,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}