{"id":"https://openalex.org/W3158860255","doi":"https://doi.org/10.1109/irps46558.2021.9405115","title":"Excellent Reliability of Xtacking\u2122 Bonding Interface","display_name":"Excellent Reliability of Xtacking\u2122 Bonding Interface","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3158860255","doi":"https://doi.org/10.1109/irps46558.2021.9405115","mag":"3158860255"},"language":"en","primary_location":{"id":"doi:10.1109/irps46558.2021.9405115","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405115","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100629549","display_name":"Yan Ouyang","orcid":"https://orcid.org/0000-0002-6674-5086"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yan Ouyang","raw_affiliation_strings":["Yangtze Memory Technologies Co., Ltd., Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yangtze Memory Technologies Co., Ltd., Wuhan, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101492544","display_name":"Suhui Yang","orcid":"https://orcid.org/0000-0002-2128-5370"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Suhui Yang","raw_affiliation_strings":["Yangtze Memory Technologies Co., Ltd., Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yangtze Memory Technologies Co., Ltd., Wuhan, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005250588","display_name":"Dandan Yin","orcid":"https://orcid.org/0000-0003-0819-3858"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Dandan Yin","raw_affiliation_strings":["Yangtze Memory Technologies Co., Ltd., Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yangtze Memory Technologies Co., Ltd., Wuhan, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046372345","display_name":"Xiang Huang","orcid":"https://orcid.org/0009-0004-4461-9531"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xiang Huang","raw_affiliation_strings":["Yangtze Memory Technologies Co., Ltd., Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yangtze Memory Technologies Co., Ltd., Wuhan, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039618601","display_name":"Zhiqiang Wang","orcid":"https://orcid.org/0000-0001-5946-8407"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zhiqiang Wang","raw_affiliation_strings":["Yangtze Memory Technologies Co., Ltd., Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yangtze Memory Technologies Co., Ltd., Wuhan, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111512619","display_name":"Shengwei Yang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shengwei Yang","raw_affiliation_strings":["Yangtze Memory Technologies Co., Ltd., Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yangtze Memory Technologies Co., Ltd., Wuhan, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100765530","display_name":"Kun Han","orcid":"https://orcid.org/0000-0001-6181-2203"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kun Han","raw_affiliation_strings":["Yangtze Memory Technologies Co., Ltd., Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yangtze Memory Technologies Co., Ltd., Wuhan, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013730066","display_name":"Zhongyi Xia","orcid":"https://orcid.org/0009-0004-6701-2353"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zhongyi Xia","raw_affiliation_strings":["Yangtze Memory Technologies Co., Ltd., Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yangtze Memory Technologies Co., Ltd., Wuhan, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6801950335502625},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6762061715126038},{"id":"https://openalex.org/keywords/thermocompression-bonding","display_name":"Thermocompression bonding","score":0.592922568321228},{"id":"https://openalex.org/keywords/temperature-cycling","display_name":"Temperature cycling","score":0.5898478627204895},{"id":"https://openalex.org/keywords/three-dimensional-integrated-circuit","display_name":"Three-dimensional integrated circuit","score":0.5540353059768677},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.5199722051620483},{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.49234330654144287},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.47647449374198914},{"id":"https://openalex.org/keywords/scanning-acoustic-microscope","display_name":"Scanning acoustic microscope","score":0.4441227912902832},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.4331495761871338},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.4153749346733093},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3555775582790375},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.32145044207572937},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.31055694818496704},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.24725914001464844},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18732541799545288},{"id":"https://openalex.org/keywords/microscopy","display_name":"Microscopy","score":0.09800779819488525},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.09751033782958984}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6801950335502625},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6762061715126038},{"id":"https://openalex.org/C201845621","wikidata":"https://www.wikidata.org/wiki/Q1111341","display_name":"Thermocompression bonding","level":3,"score":0.592922568321228},{"id":"https://openalex.org/C177564732","wikidata":"https://www.wikidata.org/wiki/Q7698333","display_name":"Temperature cycling","level":3,"score":0.5898478627204895},{"id":"https://openalex.org/C59088047","wikidata":"https://www.wikidata.org/wiki/Q229370","display_name":"Three-dimensional integrated circuit","level":3,"score":0.5540353059768677},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.5199722051620483},{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.49234330654144287},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.47647449374198914},{"id":"https://openalex.org/C2778759172","wikidata":"https://www.wikidata.org/wiki/Q424047","display_name":"Scanning acoustic microscope","level":4,"score":0.4441227912902832},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4331495761871338},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.4153749346733093},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3555775582790375},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.32145044207572937},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.31055694818496704},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.24725914001464844},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18732541799545288},{"id":"https://openalex.org/C147080431","wikidata":"https://www.wikidata.org/wiki/Q1074953","display_name":"Microscopy","level":2,"score":0.09800779819488525},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.09751033782958984},{"id":"https://openalex.org/C28413391","wikidata":"https://www.wikidata.org/wiki/Q785542","display_name":"Capillary number","level":3,"score":0.0},{"id":"https://openalex.org/C2781117724","wikidata":"https://www.wikidata.org/wiki/Q4674694","display_name":"Acoustic microscopy","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C196806460","wikidata":"https://www.wikidata.org/wiki/Q188603","display_name":"Capillary action","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps46558.2021.9405115","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps46558.2021.9405115","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.6200000047683716}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W2584563561","https://openalex.org/W2585597896","https://openalex.org/W2601087915","https://openalex.org/W2617220603","https://openalex.org/W2623907268","https://openalex.org/W2735365307","https://openalex.org/W2765581624","https://openalex.org/W2785863405","https://openalex.org/W2792423839","https://openalex.org/W2800597541","https://openalex.org/W2885839527","https://openalex.org/W2897468631","https://openalex.org/W2924489283","https://openalex.org/W2944084166","https://openalex.org/W2952219104","https://openalex.org/W3108694058","https://openalex.org/W3114324710"],"related_works":["https://openalex.org/W2372884135","https://openalex.org/W2090223096","https://openalex.org/W4285103033","https://openalex.org/W3211414309","https://openalex.org/W2922014381","https://openalex.org/W2971335276","https://openalex.org/W3209214527","https://openalex.org/W2508314702","https://openalex.org/W4385893376","https://openalex.org/W2903657251"],"abstract_inverted_index":{"Xtacking\u2122":[0,42],"is":[1,79],"a":[2],"novel":[3],"3D":[4],"(three-dimensional)":[5],"NAND":[6],"flash":[7],"architecture,":[8],"in":[9,45,144],"which":[10,78,134],"memory":[11],"cells":[12],"and":[13,50,66,99,108,153],"peripheral":[14],"circuits":[15],"are":[16],"bonded":[17],"by":[18],"millions":[19,158],"of":[20,22,41,110,140,159,161],"pairs":[21,160],"small-pitch":[23,162],"metal":[24,163],"vias.":[25,164],"Consequently,":[26],"its":[27],"bonding":[28,43,60,67,111,142,155],"interface":[29,44,68,143,156],"reliability":[30,39,57,116,139],"attracts":[31],"great":[32],"interest.":[33],"In":[34,53,113],"this":[35],"paper,":[36],"we":[37],"conducted":[38],"test":[40,47,54,93,103],"both":[46],"structure":[48,55],"level":[49,56,101,115],"product":[51,114],"level.":[52],"test,":[58,117],"the":[59,89,137,141],"layer":[61],"showed":[62],"stable":[63],"electrical":[64],"properties":[65],"after":[69,129],"ultra-long":[70],"time":[71,96],"thermal":[72,130],"or":[73,121,131],"humidity":[74,132],"stress":[75],"(e.g.,":[76,86],"7000hrs),":[77],"much":[80],"longer":[81],"than":[82],"common":[83],"industry":[84],"requirement":[85],"1000hrs).":[87],"Furthermore,":[88],"double":[90],"cantilever":[91],"beam":[92],"following":[94],"long":[95],"temperature":[97],"cycling":[98],"package":[100],"electromigration":[102],"also":[104],"demonstrated":[105],"good":[106],"strength":[107],"stability":[109],"interface.":[112],"no":[118],"function":[119],"failure":[120],"scanning":[122],"acoustic":[123],"microscope":[124],"image":[125],"abnormality":[126],"was":[127],"observed":[128],"stress,":[133],"further":[135],"proves":[136],"excellent":[138],"actual":[145],"product.":[146],"Thus":[147],"Xtacking":[148],"\u2122":[149],"architecture":[150],"achieved":[151],"robust":[152],"reliable":[154],"with":[157]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":7}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}