{"id":"https://openalex.org/W3040357489","doi":"https://doi.org/10.1109/irps45951.2020.9129530","title":"Inverse Design of FinFET SRAM Cells","display_name":"Inverse Design of FinFET SRAM Cells","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3040357489","doi":"https://doi.org/10.1109/irps45951.2020.9129530","mag":"3040357489"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9129530","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129530","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100422096","display_name":"Rui Zhang","orcid":"https://orcid.org/0000-0002-8273-5769"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rui Zhang","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070698492","display_name":"Zhaocheng Liu","orcid":"https://orcid.org/0000-0001-6623-9231"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zhaocheng Liu","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025591564","display_name":"Kexin Yang","orcid":"https://orcid.org/0000-0002-3630-1003"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kexin Yang","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014655929","display_name":"Taizhi Liu","orcid":"https://orcid.org/0000-0001-5057-4916"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Taizhi Liu","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003762748","display_name":"Wenshan Cai","orcid":"https://orcid.org/0000-0002-6367-3857"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wenshan Cai","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032107826","display_name":"Linda Milor","orcid":"https://orcid.org/0000-0002-8244-4793"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Linda Milor","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":0.1041,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.42216118,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7453228831291199},{"id":"https://openalex.org/keywords/inverse","display_name":"Inverse","score":0.7314446568489075},{"id":"https://openalex.org/keywords/duty-cycle","display_name":"Duty cycle","score":0.5762229561805725},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5469527244567871},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.5240288376808167},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4755173325538635},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4633975327014923},{"id":"https://openalex.org/keywords/set","display_name":"Set (abstract data type)","score":0.45928052067756653},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.4541773200035095},{"id":"https://openalex.org/keywords/inverse-problem","display_name":"Inverse problem","score":0.44147831201553345},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.44073277711868286},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.43529099225997925},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.38948488235473633},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.381438285112381},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.3096272349357605},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2267560362815857},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1997230350971222},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.19943666458129883},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.19291415810585022},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.17545774579048157},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.15312352776527405},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.132304847240448}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7453228831291199},{"id":"https://openalex.org/C207467116","wikidata":"https://www.wikidata.org/wiki/Q4385666","display_name":"Inverse","level":2,"score":0.7314446568489075},{"id":"https://openalex.org/C199822604","wikidata":"https://www.wikidata.org/wiki/Q557120","display_name":"Duty cycle","level":3,"score":0.5762229561805725},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5469527244567871},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.5240288376808167},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4755173325538635},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4633975327014923},{"id":"https://openalex.org/C177264268","wikidata":"https://www.wikidata.org/wiki/Q1514741","display_name":"Set (abstract data type)","level":2,"score":0.45928052067756653},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.4541773200035095},{"id":"https://openalex.org/C135252773","wikidata":"https://www.wikidata.org/wiki/Q1567213","display_name":"Inverse problem","level":2,"score":0.44147831201553345},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.44073277711868286},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.43529099225997925},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.38948488235473633},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.381438285112381},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.3096272349357605},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2267560362815857},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1997230350971222},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.19943666458129883},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19291415810585022},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.17545774579048157},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.15312352776527405},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.132304847240448},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9129530","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129530","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5899999737739563,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1489111899","https://openalex.org/W1511865672","https://openalex.org/W1607614167","https://openalex.org/W2020404011","https://openalex.org/W2041383392","https://openalex.org/W2051258003","https://openalex.org/W2130811814","https://openalex.org/W2153258655","https://openalex.org/W2172037169","https://openalex.org/W2620611231","https://openalex.org/W2793395449","https://openalex.org/W2794171470","https://openalex.org/W2803281408","https://openalex.org/W2803645833","https://openalex.org/W2810791347","https://openalex.org/W2899771611","https://openalex.org/W2922494440","https://openalex.org/W2940916895","https://openalex.org/W3030791824","https://openalex.org/W3149249597","https://openalex.org/W6640183753","https://openalex.org/W6756040250","https://openalex.org/W6763877926"],"related_works":["https://openalex.org/W4392590355","https://openalex.org/W3150866391","https://openalex.org/W2167195438","https://openalex.org/W2112214579","https://openalex.org/W2310523918","https://openalex.org/W4200470254","https://openalex.org/W2843479960","https://openalex.org/W2517623286","https://openalex.org/W2071018290","https://openalex.org/W1602382472"],"abstract_inverted_index":{"A":[0],"convenient":[1],"method":[2],"based":[3],"on":[4],"deep":[5],"neural":[6],"networks":[7],"and":[8,52,63,80,91,109,122],"an":[9],"evolutionary":[10],"algorithm":[11],"is":[12,119],"proposed":[13],"for":[14],"the":[15,37,84],"inverse":[16,117],"design":[17,23,118],"of":[18,72,86,116],"FinFET":[19],"SRAM":[20],"cells.":[21],"Inverse":[22],"helps":[24],"designers":[25],"who":[26],"have":[27],"less":[28],"device":[29],"physics":[30],"knowledge":[31],"obtain":[32],"cell":[33,67],"configurations":[34,68],"that":[35,55],"provide":[36],"desired":[38],"performance":[39],"metrics":[40],"under":[41],"selected":[42],"wearout":[43,98],"conditions,":[44],"such":[45,76],"as":[46,77],"a":[47,57],"set":[48],"specific":[49,58],"stress":[50],"time":[51],"use":[53],"scenario":[54],"creates":[56],"activity":[59],"level":[60],"(duty":[61],"cycle":[62],"transition":[64],"rate).":[65],"The":[66,93,114],"being":[69],"considered":[70],"consists":[71],"various":[73],"process":[74,90,115],"parameters,":[75],"gate":[78],"length":[79],"fin":[81],"height,":[82],"in":[83],"presence":[85],"variations":[87],"due":[88],"to":[89,97],"wearout.":[92],"front-end":[94],"mechanisms":[95],"related":[96],"include":[99],"negative":[100],"bias":[101],"temperature":[102],"instability":[103],"(NBTI),":[104],"hot":[105],"carrier":[106],"injection":[107],"(HCI),":[108],"random":[110],"telegraph":[111],"noise":[112],"(RTN).":[113],"achieved":[120],"quickly":[121],"at":[123],"good":[124],"accuracy.":[125]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}