{"id":"https://openalex.org/W3039106329","doi":"https://doi.org/10.1109/irps45951.2020.9129324","title":"Surge Energy Robustness of GaN Gate Injection Transistors","display_name":"Surge Energy Robustness of GaN Gate Injection Transistors","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3039106329","doi":"https://doi.org/10.1109/irps45951.2020.9129324","mag":"3039106329"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9129324","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129324","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5003393009","display_name":"Ruizhe Zhang","orcid":"https://orcid.org/0000-0002-6937-7653"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Ruizhe Zhang","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082418616","display_name":"Joseph P. Kozak","orcid":"https://orcid.org/0000-0002-4308-6815"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joseph P. Kozak","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006957001","display_name":"Jingcun Liu","orcid":"https://orcid.org/0000-0002-6155-1450"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jingcun Liu","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101652385","display_name":"Ming Xiao","orcid":"https://orcid.org/0000-0001-9072-6371"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ming Xiao","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089728227","display_name":"Yuhao Zhang","orcid":"https://orcid.org/0000-0001-6350-4861"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuhao Zhang","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5003393009"],"corresponding_institution_ids":["https://openalex.org/I859038795"],"apc_list":null,"apc_paid":null,"fwci":2.4587,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.89200696,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.7568005323410034},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6089642643928528},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5970759391784668},{"id":"https://openalex.org/keywords/surge","display_name":"Surge","score":0.5578457713127136},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5421302318572998},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.49374422430992126},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.45700323581695557},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4241431653499603},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.32585105299949646},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.227228581905365},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20525825023651123},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.056248247623443604}],"concepts":[{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.7568005323410034},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6089642643928528},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5970759391784668},{"id":"https://openalex.org/C154108245","wikidata":"https://www.wikidata.org/wiki/Q287381","display_name":"Surge","level":2,"score":0.5578457713127136},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5421302318572998},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.49374422430992126},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45700323581695557},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4241431653499603},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32585105299949646},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.227228581905365},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20525825023651123},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.056248247623443604},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps45951.2020.9129324","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129324","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:hub.hku.hk:10722/352198","is_oa":false,"landing_page_url":"https://hub.hku.hk/handle/10722/352198","pdf_url":null,"source":{"id":"https://openalex.org/S4377196271","display_name":"The HKU Scholars Hub (University of Hong Kong)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I889458895","host_organization_name":"University of Hong Kong","host_organization_lineage":["https://openalex.org/I889458895"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference_Paper"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.9100000262260437}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1875959771","https://openalex.org/W2092332957","https://openalex.org/W2218145060","https://openalex.org/W2461874365","https://openalex.org/W2477527537","https://openalex.org/W2520038330","https://openalex.org/W2524444794","https://openalex.org/W2574124762","https://openalex.org/W2620805589","https://openalex.org/W2621250804","https://openalex.org/W2730786424","https://openalex.org/W2805576206","https://openalex.org/W2903345876","https://openalex.org/W2940862711","https://openalex.org/W2945025225","https://openalex.org/W2965466742","https://openalex.org/W2967146328"],"related_works":["https://openalex.org/W2586462994","https://openalex.org/W4205593056","https://openalex.org/W4245899862","https://openalex.org/W2366724728","https://openalex.org/W1679724328","https://openalex.org/W4290993477","https://openalex.org/W2024978468","https://openalex.org/W4309524129","https://openalex.org/W4303943945","https://openalex.org/W2588941787"],"abstract_inverted_index":{"An":[0],"essential":[1],"robustness":[2,150,201,232],"of":[3,51,54,71,137,151,202,233,254],"power":[4,28,206],"devices":[5],"is":[6,15,124,154,175],"the":[7,52,63,67,77,95,109,114,127,148,171,178,184,191,200,210,229,240,247,250,261],"capability":[8,212],"to":[9,93,213],"safely":[10],"withstand":[11,69,94,132],"surge":[12,32,96,230],"energy,":[13,193],"which":[14,208],"typically":[16],"characterized":[17],"in":[18,57,126],"an":[19],"unclamped":[20],"inductive":[21],"switching":[22],"(UIS)":[23],"condition.":[24],"Si":[25,85,203],"and":[26,86,118,165,204],"SiC":[27,87,205],"MOSFETs":[29,207],"can":[30,226],"dissipate":[31,215],"energy":[33,97,101,123,216,231],"through":[34,98],"avalanching.":[35],"However,":[36],"GaN":[37,55,75,78,89,138,152,234],"high-electron-mobility-transistors":[38],"(HEMTs)":[39],"have":[40],"no":[41,122],"or":[42],"minimal":[43],"avalanche":[44,192],"capability.":[45,162],"Prior":[46],"works":[47],"reported":[48],"controversial":[49],"interpretations":[50],"behaviors":[53],"HEMTs":[56],"UIS":[58,248],"tests.":[59],"This":[60],"work,":[61],"for":[62,199,260],"first":[64],"time,":[65],"clarifies":[66],"surge-energy":[68,149],"process":[70],"a":[72,99,194,223],"mainstream":[73],"enhancement-mode":[74],"HEMT,":[76],"gate":[79],"injection":[80],"transistor":[81],"(GIT).":[82],"Different":[83],"from":[84,103,239],"MOSFETs,":[88],"GITs":[90,139,153],"are":[91],"shown":[92],"resonant":[100,131],"transfer":[102],"device":[104,115,128,172,211],"output":[105],"capacitance":[106],"back":[107],"into":[108],"load":[110],"inductor,":[111],"followed":[112],"by":[113,158,246],"reverse":[116],"conduction":[117],"inductor":[119],"discharging.":[120],"Almost":[121],"dissipated":[125],"during":[129],"this":[130],"process.":[133],"The":[134],"failure":[135,173],"mechanism":[136],"has":[140],"also":[141],"been":[142],"identified.":[143],"It":[144],"was":[145,257],"found":[146],"that":[147,170,225],"almost":[155],"solely":[156],"determined":[157],"their":[159],"transient":[160],"overvoltage":[161,186,243],"Failure":[163],"analysis":[164],"mixed-mode":[166],"TCAD":[167],"simulation":[168],"confirm":[169],"location":[174,182,253],"consistent":[176],"with":[177],"peak":[179,185],"electric":[180],"field":[181],"at":[183],"transient.":[187],"These":[188],"results":[189],"suggest":[190],"widely":[195],"used":[196],"JEDEC":[197],"standard":[198],"represents":[209],"resistively":[214],"without":[217],"thermal":[218],"runaway,":[219],"may":[220],"not":[221],"be":[222],"parameter":[224],"directly":[227],"represent":[228],"HEMTs.":[235],"In":[236],"addition,":[237],"benefited":[238],"sub-50":[241],"ns":[242],"pulse":[244],"created":[245],"test,":[249],"electrical":[251],"breakdown":[252],"hybrid-drain":[255],"GIT":[256],"experimentally":[258],"verified":[259],"firs":[262],"time.":[263]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":8},{"year":2020,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}