{"id":"https://openalex.org/W3038719932","doi":"https://doi.org/10.1109/irps45951.2020.9129322","title":"Short-term reliability of high performance Q-band AlN/GaN HEMTs","display_name":"Short-term reliability of high performance Q-band AlN/GaN HEMTs","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3038719932","doi":"https://doi.org/10.1109/irps45951.2020.9129322","mag":"3038719932"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9129322","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129322","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"preprint","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://hdl.handle.net/20.500.12210/44217","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051212378","display_name":"Riad Kabouche","orcid":"https://orcid.org/0000-0002-5363-2349"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'\u00e9lectronique de micro\u00e9lectronique et de nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I137614889","https://openalex.org/I2279609970","https://openalex.org/I3132279224","https://openalex.org/I4210095849","https://openalex.org/I4210123471","https://openalex.org/I4387154098","https://openalex.org/I70348806","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"R. Kabouche","raw_affiliation_strings":["CNRS IEMN: Institute of Electronics, Microelectronics, and Nanotechnology, Villeneuve d\u2019Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CNRS IEMN: Institute of Electronics, Microelectronics, and Nanotechnology, Villeneuve d\u2019Ascq, France","institution_ids":["https://openalex.org/I4210123471","https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006078348","display_name":"Kathia Harrouche","orcid":"https://orcid.org/0000-0003-0754-875X"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'\u00e9lectronique de micro\u00e9lectronique et de nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I137614889","https://openalex.org/I2279609970","https://openalex.org/I3132279224","https://openalex.org/I4210095849","https://openalex.org/I4210123471","https://openalex.org/I4387154098","https://openalex.org/I70348806","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"K. Harrouche","raw_affiliation_strings":["CNRS IEMN: Institute of Electronics, Microelectronics, and Nanotechnology, Villeneuve d\u2019Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CNRS IEMN: Institute of Electronics, Microelectronics, and Nanotechnology, Villeneuve d\u2019Ascq, France","institution_ids":["https://openalex.org/I4210123471","https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108166819","display_name":"\u00c9tienne Okada","orcid":"https://orcid.org/0000-0001-6571-5945"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'\u00e9lectronique de micro\u00e9lectronique et de nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I137614889","https://openalex.org/I2279609970","https://openalex.org/I3132279224","https://openalex.org/I4210095849","https://openalex.org/I4210123471","https://openalex.org/I4387154098","https://openalex.org/I70348806","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"E. Okada","raw_affiliation_strings":["CNRS IEMN: Institute of Electronics, Microelectronics, and Nanotechnology, Villeneuve d\u2019Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CNRS IEMN: Institute of Electronics, Microelectronics, and Nanotechnology, Villeneuve d\u2019Ascq, France","institution_ids":["https://openalex.org/I4210123471","https://openalex.org/I1294671590"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016169727","display_name":"Farid Medjdoub","orcid":"https://orcid.org/0000-0002-4753-4718"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'\u00e9lectronique de micro\u00e9lectronique et de nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I137614889","https://openalex.org/I2279609970","https://openalex.org/I3132279224","https://openalex.org/I4210095849","https://openalex.org/I4210123471","https://openalex.org/I4387154098","https://openalex.org/I70348806","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"F. Medjdoub","raw_affiliation_strings":["CNRS IEMN: Institute of Electronics, Microelectronics, and Nanotechnology, Villeneuve d\u2019Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CNRS IEMN: Institute of Electronics, Microelectronics, and Nanotechnology, Villeneuve d\u2019Ascq, France","institution_ids":["https://openalex.org/I4210123471","https://openalex.org/I1294671590"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3157,"has_fulltext":true,"cited_by_count":5,"citation_normalized_percentile":{"value":0.57709174,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8018707036972046},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.6776031851768494},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6429024338722229},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.587074339389801},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5849629044532776},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.5394384264945984},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.49799370765686035},{"id":"https://openalex.org/keywords/extremely-high-frequency","display_name":"Extremely high frequency","score":0.49656349420547485},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.4764435887336731},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.46526339650154114},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.42409610748291016},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.28077232837677},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.25040262937545776},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.20137885212898254},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.19425570964813232},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.09721672534942627},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.09313628077507019},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08528196811676025}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8018707036972046},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6776031851768494},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6429024338722229},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.587074339389801},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5849629044532776},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5394384264945984},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.49799370765686035},{"id":"https://openalex.org/C45764600","wikidata":"https://www.wikidata.org/wiki/Q570342","display_name":"Extremely high frequency","level":2,"score":0.49656349420547485},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.4764435887336731},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.46526339650154114},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.42409610748291016},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.28077232837677},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.25040262937545776},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.20137885212898254},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.19425570964813232},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.09721672534942627},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.09313628077507019},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08528196811676025},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/irps45951.2020.9129322","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129322","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:lilloa.univ-lille.fr:20.500.12210/44217","is_oa":true,"landing_page_url":"http://hdl.handle.net/20.500.12210/44217","pdf_url":"http://hdl.handle.net/20.500.12210/44217","source":{"id":"https://openalex.org/S4306402203","display_name":"LillOA (Universit\u00e9 de Lille (University Of Lille))","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4210123514","host_organization_name":"Centre d'Etudes en Civilisations, Langues et Litt\u00e9ratures Etrang\u00e8res","host_organization_lineage":["https://openalex.org/I4210123514"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/conferenceObject"},{"id":"pmh:oai:HAL:hal-03044147v1","is_oa":false,"landing_page_url":"https://hal.science/hal-03044147","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL (Le Centre pour la Communication Scientifique Directe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1294671590","host_organization_name":"Centre National de la Recherche Scientifique","host_organization_lineage":["https://openalex.org/I1294671590"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE International Reliability Physics Symposium (IRPS 2020), Apr 2020, Dallas, TX, United States. pp.1-6, ⟨10.1109/IRPS45951.2020.9129322⟩","raw_type":"Conference papers"}],"best_oa_location":{"id":"pmh:oai:lilloa.univ-lille.fr:20.500.12210/44217","is_oa":true,"landing_page_url":"http://hdl.handle.net/20.500.12210/44217","pdf_url":"http://hdl.handle.net/20.500.12210/44217","source":{"id":"https://openalex.org/S4306402203","display_name":"LillOA (Universit\u00e9 de Lille (University Of Lille))","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4210123514","host_organization_name":"Centre d'Etudes en Civilisations, Langues et Litt\u00e9ratures Etrang\u00e8res","host_organization_lineage":["https://openalex.org/I4210123514"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/conferenceObject"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8100000023841858,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G8441881459","display_name":"COMPREHENSIVE ANALYSIS AND OPTIMIZATION OF TRAPPING PHENOMENA IN GAN-BASED HEMTS FOR THE DEVELOPMENT OF NEXT GENERATION POWER COMPONENTS OPERATING BEYOND 30 GHZ.","funder_award_id":"ANR-17-ASTR-0007","funder_id":"https://openalex.org/F4320320883","funder_display_name":"Agence Nationale de la Recherche"}],"funders":[{"id":"https://openalex.org/F4320320883","display_name":"Agence Nationale de la Recherche","ror":"https://ror.org/00rbzpz17"}],"has_content":{"pdf":true,"grobid_xml":false},"content_urls":{"pdf":"https://content.openalex.org/works/W3038719932.pdf"},"referenced_works_count":33,"referenced_works":["https://openalex.org/W321215454","https://openalex.org/W1879538535","https://openalex.org/W2027634923","https://openalex.org/W2036447248","https://openalex.org/W2042870706","https://openalex.org/W2049263388","https://openalex.org/W2051486208","https://openalex.org/W2068502686","https://openalex.org/W2107535273","https://openalex.org/W2116027915","https://openalex.org/W2118873943","https://openalex.org/W2123444016","https://openalex.org/W2125864840","https://openalex.org/W2131332951","https://openalex.org/W2132531866","https://openalex.org/W2134030395","https://openalex.org/W2288234485","https://openalex.org/W2304074492","https://openalex.org/W2318871569","https://openalex.org/W2323186411","https://openalex.org/W2542727187","https://openalex.org/W2601921476","https://openalex.org/W2616474267","https://openalex.org/W2769091763","https://openalex.org/W2885636056","https://openalex.org/W2901962463","https://openalex.org/W2977076293","https://openalex.org/W2981335998","https://openalex.org/W2984487880","https://openalex.org/W6677947202","https://openalex.org/W6679988631","https://openalex.org/W6700696585","https://openalex.org/W6733240237"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W4297099710","https://openalex.org/W3088454288","https://openalex.org/W4313611767","https://openalex.org/W2613044742","https://openalex.org/W2466508933"],"abstract_inverted_index":{"We":[0],"report":[1],"on":[2,56],"an":[3],"on-wafer":[4],"short-term":[5],"40":[6],"GHz":[7],"RF":[8],"reliability":[9],"stress":[10],"test":[11],"comparison":[12],"up":[13],"to":[14,68,74],"140\u00b0C":[15],"base":[16],"plate":[17],"temperature":[18],"between":[19],"a":[20,53],"3":[21],"nm":[22,25],"and":[23],"4":[24],"barrier":[26,45,66],"thickness":[27,46],"AlN/GaN":[28],"HEMT":[29],"technology":[30],"showing":[31],"high":[32],"power":[33],"performances":[34],"in":[35,47],"the":[36,44,57,69,75],"millimeter":[37],"wave":[38],"range.":[39],"It":[40],"is":[41,72],"found":[42],"that":[43],"this":[48],"highly":[49],"strain":[50],"heterostructure":[51],"has":[52],"major":[54],"impact":[55],"device":[58],"reliability.":[59],"The":[60],"superior":[61],"robustness":[62],"when":[63],"using":[64],"thinner":[65],"(closer":[67],"critical":[70],"thickness)":[71],"attributed":[73],"reduced":[76],"strain.":[77]},"counts_by_year":[{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2}],"updated_date":"2026-06-20T22:02:38.213706","created_date":"2025-10-10T00:00:00"}