{"id":"https://openalex.org/W3040053938","doi":"https://doi.org/10.1109/irps45951.2020.9129286","title":"Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress","display_name":"Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3040053938","doi":"https://doi.org/10.1109/irps45951.2020.9129286","mag":"3040053938"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9129286","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129286","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084572291","display_name":"Shanmuganathan Palanisamy","orcid":"https://orcid.org/0000-0001-5787-644X"},"institutions":[{"id":"https://openalex.org/I2610724","display_name":"Chemnitz University of Technology","ror":"https://ror.org/00a208s56","country_code":"DE","type":"education","lineage":["https://openalex.org/I2610724"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"S. Palanisamy","raw_affiliation_strings":["Technische Universität Chemnitz,Chair of Power Electronics and EMC,Germany"],"affiliations":[{"raw_affiliation_string":"Technische Universität Chemnitz,Chair of Power Electronics and EMC,Germany","institution_ids":["https://openalex.org/I2610724"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047489567","display_name":"Josef Lutz","orcid":"https://orcid.org/0000-0001-5227-4220"},"institutions":[{"id":"https://openalex.org/I2610724","display_name":"Chemnitz University of Technology","ror":"https://ror.org/00a208s56","country_code":"DE","type":"education","lineage":["https://openalex.org/I2610724"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. Lutz","raw_affiliation_strings":["Technische Universität Chemnitz,Chair of Power Electronics and EMC,Germany"],"affiliations":[{"raw_affiliation_string":"Technische Universität Chemnitz,Chair of Power Electronics and EMC,Germany","institution_ids":["https://openalex.org/I2610724"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088685855","display_name":"Roman Boldyrjew-Mast","orcid":"https://orcid.org/0009-0006-6131-1285"},"institutions":[{"id":"https://openalex.org/I2610724","display_name":"Chemnitz University of Technology","ror":"https://ror.org/00a208s56","country_code":"DE","type":"education","lineage":["https://openalex.org/I2610724"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Boldyrjew-Mast","raw_affiliation_strings":["Technische Universität Chemnitz,Chair of Power Electronics and EMC,Germany"],"affiliations":[{"raw_affiliation_string":"Technische Universität Chemnitz,Chair of Power Electronics and EMC,Germany","institution_ids":["https://openalex.org/I2610724"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036487516","display_name":"Thomas Basler","orcid":"https://orcid.org/0000-0003-1489-6461"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"T. Basler","raw_affiliation_strings":["Infineon Technologies AG,Neubiberg,Germany"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG,Neubiberg,Germany","institution_ids":["https://openalex.org/I137594350"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5084572291"],"corresponding_institution_ids":["https://openalex.org/I2610724"],"apc_list":null,"apc_paid":null,"fwci":0.6165,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.67462362,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7634382843971252},{"id":"https://openalex.org/keywords/surge","display_name":"Surge","score":0.6870861053466797},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6228100061416626},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5665949583053589},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.5250332355499268},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4979877471923828},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.45879480242729187},{"id":"https://openalex.org/keywords/varistor","display_name":"Varistor","score":0.45662012696266174},{"id":"https://openalex.org/keywords/aluminium","display_name":"Aluminium","score":0.44476988911628723},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.354940801858902},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.30121272802352905},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13598942756652832},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12572994828224182},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.10530886054039001}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7634382843971252},{"id":"https://openalex.org/C154108245","wikidata":"https://www.wikidata.org/wiki/Q287381","display_name":"Surge","level":2,"score":0.6870861053466797},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6228100061416626},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5665949583053589},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5250332355499268},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4979877471923828},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.45879480242729187},{"id":"https://openalex.org/C58289394","wikidata":"https://www.wikidata.org/wiki/Q465115","display_name":"Varistor","level":3,"score":0.45662012696266174},{"id":"https://openalex.org/C513153333","wikidata":"https://www.wikidata.org/wiki/Q663","display_name":"Aluminium","level":2,"score":0.44476988911628723},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.354940801858902},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.30121272802352905},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13598942756652832},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12572994828224182},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10530886054039001},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9129286","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129286","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1964584535","https://openalex.org/W2096673206","https://openalex.org/W2105114021","https://openalex.org/W2546655083","https://openalex.org/W2550683887","https://openalex.org/W2554192573","https://openalex.org/W2769055120","https://openalex.org/W2790374843","https://openalex.org/W2809768744","https://openalex.org/W2811341844","https://openalex.org/W2898943156","https://openalex.org/W2956388751","https://openalex.org/W2960540394","https://openalex.org/W2990061968","https://openalex.org/W6674548277","https://openalex.org/W6675845661","https://openalex.org/W6755986904"],"related_works":["https://openalex.org/W331242945","https://openalex.org/W4386380654","https://openalex.org/W2070705592","https://openalex.org/W2150802956","https://openalex.org/W2046139496","https://openalex.org/W2356988259","https://openalex.org/W2007394239","https://openalex.org/W2888278177","https://openalex.org/W2089279496","https://openalex.org/W2391938493"],"abstract_inverted_index":{"In":[0,106],"this":[1],"work,":[2],"thermomechanical":[3],"failures":[4],"during":[5],"single":[6,25],"and":[7,96,102,124],"repetitive":[8,110,135],"surge":[9,27,48,62,73,111,136],"current":[10,28,57,63,74,112,137],"events":[11],"of":[12,58,149],"40":[13],"m\u03a9":[14],"class,":[15],"1.2":[16],"kV":[17],"SiC":[18,154],"MOSFET":[19],"inverse":[20,151],"diodes":[21],"were":[22,138],"investigated.":[23],"The":[24],"event":[26,75],"was":[29,39,68,90],"performed":[30,139],"under":[31,120],"different":[32,142],"pulse":[33],"length":[34],"in":[35,153],"channel-off":[36],"mode.":[37],"It":[38],"observed":[40],"that":[41],"the":[42,54,78,83,87,93,97,150],"body":[43],"diode":[44,152],"survived":[45],"10":[46],"ms":[47],"currents":[49],"more":[50],"than":[51],"11":[52],"times":[53],"application-near":[55],"nominal":[56],"20":[59],"A.":[60],"After":[61],"destruction":[64],"a":[65,71],"failure":[66],"analysis":[67],"performed.":[69],"At":[70],"high":[72,85,114,125],"(232":[76],"A)":[77],"device":[79],"failed":[80],"due":[81],"to":[82,108,134,140,145],"very":[84],"temperature,":[86],"aluminium":[88],"metallization":[89,99],"melted":[91,98],"around":[92],"bond":[94],"foot":[95],"shorted":[100],"gate":[101,122,127],"source":[103],"(GS)":[104],"metal.":[105],"addition":[107],"that,":[109],"tests,":[113],"temperature":[115,126],"reverse":[116],"bias":[117,123,128],"(HTRB)":[118],"tests":[119],"negative":[121],"test":[129],"(HTGB)":[130],"with":[131],"samples":[132],"exposed":[133],"investigate":[141],"aging":[143],"mechanisms":[144],"determine":[146],"reliability":[147],"aspects":[148],"MOSFETs.":[155]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}