{"id":"https://openalex.org/W3039767936","doi":"https://doi.org/10.1109/irps45951.2020.9129279","title":"Analysis of charge-to-hot-carrier degradation in Ge pFinFETs","display_name":"Analysis of charge-to-hot-carrier degradation in Ge pFinFETs","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3039767936","doi":"https://doi.org/10.1109/irps45951.2020.9129279","mag":"3039767936"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9129279","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129279","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5081525618","display_name":"Wataru Mizubayashi","orcid":"https://orcid.org/0000-0003-3178-2087"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Wataru Mizubayashi","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054327930","display_name":"Hiroshi Oka","orcid":"https://orcid.org/0000-0002-6571-3461"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Oka","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050943385","display_name":"Koichi Fukuda","orcid":"https://orcid.org/0000-0002-3148-6010"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koichi Fukuda","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100701799","display_name":"Yuki Ishikawa","orcid":"https://orcid.org/0009-0000-0189-2790"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuki Ishikawa","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077580590","display_name":"Kazuhiko Endo","orcid":"https://orcid.org/0000-0002-3517-3580"},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuhiko Endo","raw_affiliation_strings":["National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I73613424"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.05753838,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.3323478698730469},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2738887369632721},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.07951334118843079}],"concepts":[{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.3323478698730469},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2738887369632721},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.07951334118843079}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9129279","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129279","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2490765418","https://openalex.org/W2513192027","https://openalex.org/W2526221796"],"related_works":["https://openalex.org/W2534928293","https://openalex.org/W2150099345","https://openalex.org/W3004580327","https://openalex.org/W1490077415","https://openalex.org/W2160318243","https://openalex.org/W2182874356","https://openalex.org/W3034806817","https://openalex.org/W2375757266","https://openalex.org/W2089888251","https://openalex.org/W4232118530"],"abstract_inverted_index":{"We":[0],"have":[1],"investigated":[2],"the":[3,76,84,111,119,125,128,137,145,150,166,179,187,195,200,203],"charge-to-hot-carrier":[4],"degradation":[5,57],"(Q":[6],"<sub":[7,16,20,24,28,35,78,89,93,97,154,208],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[8,17,21,25,29,36,79,90,94,98,155,209],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">HCD</sub>":[9,37,156,210],")":[10],"in":[11,70,75,87,165],"Ge":[12,39,107,115],"pFinFETs":[13,40],"with":[14,45,161],"HfO":[15,88],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[18,22,30,80,91,95],"/Al":[19,92],"O":[23,96],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[26,99],"/GeO":[27],"gate":[31,54],"stacks.":[32],"The":[33,101],"Q":[34,153,207],"of":[38,53,103,106,114,121,127,140,168,177,181,206],"has":[41,157],"a":[42,133,158,169],"power-law":[43,159,204],"relationship":[44,160,205],"drain":[46,50,146,162,196,214],"current":[47],"at":[48,132],"each":[49],"voltage,":[51],"regardless":[52],"length.":[55],"Hot-carrier":[56],"(HCD)":[58],"is":[59,108,116,149,184,192,199,211],"caused":[60],"when":[61],"hot":[62,104,123,141,182],"holes":[63],"generated":[64],"by":[65,213],"impact":[66,171],"ionization":[67,172],"are":[68],"trapped":[69,129],"as-grown":[71],"hole":[72],"traps":[73],"[1]":[74],"GeO":[77],"interfacial":[81],"layer":[82],"and":[83],"trap":[85],"sites":[86],"film.":[100],"velocity":[102],"carriers":[105,130,142,183],"high":[109,170],"because":[110],"carrier":[112],"mobility":[113],"high.":[117],"In":[118],"case":[120,167],"high-velocity":[122],"carriers,":[124],"detrapping":[126],"occurs":[131],"constant":[134],"rate.":[135],"Therefore,":[136],"trapping":[138],"rate":[139,173],"depends":[143],"on":[144],"current.":[147,163],"This":[148,198],"reason":[151,201],"why":[152,202],"Also,":[164],"such":[174],"as":[175],"that":[176],"Ge,":[178],"generation":[180],"sensitive":[185],"to":[186,194],"lateral":[188],"electric":[189],"field,":[190],"which":[191],"related":[193],"voltage.":[197,215],"determined":[212]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}