{"id":"https://openalex.org/W3040305056","doi":"https://doi.org/10.1109/irps45951.2020.9129258","title":"A new technique for evaluating stacked nanosheet inner spacer TDDB reliability","display_name":"A new technique for evaluating stacked nanosheet inner spacer TDDB reliability","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3040305056","doi":"https://doi.org/10.1109/irps45951.2020.9129258","mag":"3040305056"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9129258","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129258","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047842458","display_name":"Tian Shen","orcid":"https://orcid.org/0000-0002-8754-7513"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Tian Shen","raw_affiliation_strings":["IBM Research, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research, Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072651614","display_name":"K\u00f4ji Watanabe","orcid":"https://orcid.org/0000-0002-3190-8439"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Koji Watanabe","raw_affiliation_strings":["IBM Research, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research, Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110795087","display_name":"Huimei Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Huimei Zhou","raw_affiliation_strings":["IBM Research, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research, Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029903576","display_name":"Michael Belyansky","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael Belyansky","raw_affiliation_strings":["IBM Research, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research, Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007809604","display_name":"Erin Stuckert","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Erin Stuckert","raw_affiliation_strings":["IBM Research, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research, Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102006867","display_name":"Jingyun Zhang","orcid":"https://orcid.org/0000-0002-8267-2817"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jingyun Zhang","raw_affiliation_strings":["IBM Research, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research, Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019704296","display_name":"Andrew Greene","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Andrew Greene","raw_affiliation_strings":["IBM Research, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research, Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050878670","display_name":"Veeraraghavan Basker","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Veeraraghavan Basker","raw_affiliation_strings":["IBM Research, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research, Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100343770","display_name":"Miaomiao Wang","orcid":"https://orcid.org/0000-0002-8861-612X"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Miaomiao Wang","raw_affiliation_strings":["IBM Research, Albany, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research, Albany, NY, USA","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5047842458"],"corresponding_institution_ids":["https://openalex.org/I1341412227"],"apc_list":null,"apc_paid":null,"fwci":0.411,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.60770066,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.8921834230422974},{"id":"https://openalex.org/keywords/nanosheet","display_name":"Nanosheet","score":0.8201563954353333},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7709528207778931},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5374617576599121},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5162622928619385},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.49698784947395325},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.46965208649635315},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4635924696922302},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.45341357588768005},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.42262518405914307},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40317049622535706},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.38200095295906067},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.27188390493392944},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.25518810749053955},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.23010018467903137},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1379493772983551},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11249247193336487},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.10378891229629517},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.08271408081054688},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.06867203116416931}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.8921834230422974},{"id":"https://openalex.org/C51967427","wikidata":"https://www.wikidata.org/wiki/Q17148232","display_name":"Nanosheet","level":2,"score":0.8201563954353333},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7709528207778931},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5374617576599121},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5162622928619385},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.49698784947395325},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.46965208649635315},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4635924696922302},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.45341357588768005},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.42262518405914307},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40317049622535706},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.38200095295906067},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.27188390493392944},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.25518810749053955},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.23010018467903137},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1379493772983551},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11249247193336487},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.10378891229629517},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.08271408081054688},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06867203116416931},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9129258","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129258","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5799999833106995}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2045619009","https://openalex.org/W2147888186","https://openalex.org/W2585427879","https://openalex.org/W2744406216","https://openalex.org/W2800756049","https://openalex.org/W2945342145","https://openalex.org/W2946328032","https://openalex.org/W3005570787","https://openalex.org/W3005757404"],"related_works":["https://openalex.org/W2514687517","https://openalex.org/W2048139697","https://openalex.org/W3160961382","https://openalex.org/W2539595190","https://openalex.org/W1846830918","https://openalex.org/W1974749182","https://openalex.org/W1935552139","https://openalex.org/W2546473172","https://openalex.org/W3106549728","https://openalex.org/W4220813443"],"abstract_inverted_index":{"For":[0],"stacked":[1],"Nanosheet":[2],"gate-all-around":[3],"transistors,":[4],"a":[5,27,38],"new":[6],"failure":[7],"mode":[8],"between":[9],"the":[10,19,44,51,70],"gate":[11],"and":[12],"epitaxial":[13],"source/drain":[14],"(PC-Epi)":[15],"is":[16,59,66],"introduced":[17],"in":[18],"Middle-Of-Line":[20],"(MOL)":[21],"intermetal":[22],"dielectrics":[23],"(IMD)":[24],"because":[25],"of":[26],"unique":[28],"module":[29],"called":[30],"inner":[31,45,55],"spacer.":[32],"In":[33],"this":[34],"work,":[35],"we":[36],"demonstrate":[37],"novel":[39],"integration":[40],"scheme":[41],"for":[42],"evaluating":[43],"spacer":[46,56],"reliability":[47,58],"by":[48],"completely":[49],"oxidizing":[50],"Si":[52],"channel.":[53],"The":[54],"TDDB":[57],"also":[60],"shown":[61],"to":[62,68],"be":[63],"robust,":[64],"which":[65],"essential":[67],"support":[69],"continuous":[71],"aggressive":[72],"device":[73],"scaling.":[74]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}