{"id":"https://openalex.org/W3039308269","doi":"https://doi.org/10.1109/irps45951.2020.9129245","title":"Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range","display_name":"Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3039308269","doi":"https://doi.org/10.1109/irps45951.2020.9129245","mag":"3039308269"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9129245","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129245","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5081053823","display_name":"Nilotpal Choudhury","orcid":"https://orcid.org/0000-0001-6430-0174"},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Nilotpal Choudhury","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institute of Technology, Mumbai, Maharashtra, India","Indian Institute of Technology,Department of Electrical Engineering,Mumbai,Maharashtra,India,400076"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology, Mumbai, Maharashtra, India","institution_ids":["https://openalex.org/I162827531"]},{"raw_affiliation_string":"Indian Institute of Technology,Department of Electrical Engineering,Mumbai,Maharashtra,India,400076","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065901381","display_name":"Narendra Parihar","orcid":"https://orcid.org/0000-0003-3191-0333"},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Narendra Parihar","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institute of Technology, Mumbai, Maharashtra, India","Indian Institute of Technology,Department of Electrical Engineering,Mumbai,Maharashtra,India,400076"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology, Mumbai, Maharashtra, India","institution_ids":["https://openalex.org/I162827531"]},{"raw_affiliation_string":"Indian Institute of Technology,Department of Electrical Engineering,Mumbai,Maharashtra,India,400076","institution_ids":["https://openalex.org/I162827531"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5057107600","display_name":"Souvik Mahapatra","orcid":"https://orcid.org/0000-0002-4516-766X"},"institutions":[{"id":"https://openalex.org/I162827531","display_name":"Indian Institute of Technology Bombay","ror":"https://ror.org/02qyf5152","country_code":"IN","type":"education","lineage":["https://openalex.org/I162827531"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Souvik Mahapatra","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institute of Technology, Mumbai, Maharashtra, India","Indian Institute of Technology,Department of Electrical Engineering,Mumbai,Maharashtra,India,400076"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology, Mumbai, Maharashtra, India","institution_ids":["https://openalex.org/I162827531"]},{"raw_affiliation_string":"Indian Institute of Technology,Department of Electrical Engineering,Mumbai,Maharashtra,India,400076","institution_ids":["https://openalex.org/I162827531"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5081053823"],"corresponding_institution_ids":["https://openalex.org/I162827531"],"apc_list":null,"apc_paid":null,"fwci":1.0275,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.76158688,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.7810643911361694},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6625101566314697},{"id":"https://openalex.org/keywords/component","display_name":"Component (thermodynamics)","score":0.6306846737861633},{"id":"https://openalex.org/keywords/atmospheric-temperature-range","display_name":"Atmospheric temperature range","score":0.6057753562927246},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.5647416114807129},{"id":"https://openalex.org/keywords/range","display_name":"Range (aeronautics)","score":0.5277426838874817},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4609137177467346},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.32600778341293335},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28681880235671997},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.22233369946479797},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20649170875549316},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.16010618209838867},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1337129771709442},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11540663242340088},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.10986495018005371},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07594525814056396}],"concepts":[{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.7810643911361694},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6625101566314697},{"id":"https://openalex.org/C168167062","wikidata":"https://www.wikidata.org/wiki/Q1117970","display_name":"Component (thermodynamics)","level":2,"score":0.6306846737861633},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.6057753562927246},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.5647416114807129},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.5277426838874817},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4609137177467346},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.32600778341293335},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28681880235671997},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.22233369946479797},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20649170875549316},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.16010618209838867},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1337129771709442},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11540663242340088},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.10986495018005371},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07594525814056396},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9129245","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129245","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5400000214576721,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W192016692","https://openalex.org/W1977366479","https://openalex.org/W2151860561","https://openalex.org/W2153685625","https://openalex.org/W2153724269","https://openalex.org/W2164277202","https://openalex.org/W2621022228","https://openalex.org/W2621145889","https://openalex.org/W2768495718","https://openalex.org/W2780706692","https://openalex.org/W2781758939","https://openalex.org/W2796151548","https://openalex.org/W2801031576","https://openalex.org/W2802502993","https://openalex.org/W2802580967","https://openalex.org/W2902610637","https://openalex.org/W2902836251","https://openalex.org/W2929001642","https://openalex.org/W2980522477","https://openalex.org/W2999500237","https://openalex.org/W4299057040","https://openalex.org/W6906394671"],"related_works":["https://openalex.org/W2394289659","https://openalex.org/W4296916267","https://openalex.org/W2374313965","https://openalex.org/W2157278395","https://openalex.org/W2051069894","https://openalex.org/W4252213749","https://openalex.org/W2007742350","https://openalex.org/W769734323","https://openalex.org/W2354192024","https://openalex.org/W2018070723"],"abstract_inverted_index":{"An":[0],"Activated":[1],"Barrier":[2],"Double":[3],"Well":[4],"Thermionic":[5],"(ABDWT)":[6],"model":[7,40,80,111],"is":[8,81,108],"used":[9,82,94,109],"to":[10,69,110],"calculat":[11],"e":[12],"hole":[13],"trapping-detrapping":[14],"(\u0394V":[15,27,34,48],"<sub":[16,28,35,49,85,97,114],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[17,29,36,50,86,98,115],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">HT</sub>":[18],")":[19,31,38,52],"kinetics,":[20],"which,":[21],"together":[22],"with":[23],"generation":[24],"of":[25,44],"interface":[26],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">IT</sub>":[30,87],"and":[32,54,88,134],"bulk":[33],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">OT</sub>":[37,99],"traps,":[39],"the":[41],"time":[42,117],"kinetics":[43,118],"threshold":[45],"voltage":[46],"shift":[47],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</sub>":[51,116],"during":[53],"after":[55],"Negative":[56],"Bias":[57],"Temperature":[58],"Instability":[59],"(NBTI)":[60],"stress":[61],"over":[62],"an":[63],"extended":[64],"temperature":[65],"range":[66],"(T:":[67],"+165":[68],"-40":[70],"\u00b0C).":[71],"Transient":[72],"Trap":[73],"Occupancy":[74],"Model":[75],"(TTOM)":[76],"enabled":[77],"Reaction-Diffusion":[78],"(RD)":[79],"for":[83,95],"\u0394V":[84,96,113],"empirical":[89],"stretched":[90],"exponential":[91],"equations":[92],"are":[93],".":[100],"The":[101],"overall":[102],"BTI":[103],"Analysis":[104],"Tool":[105],"(BAT)":[106],"framework":[107],"ultra-fast":[112],"from":[119],"Gate":[120,125,137],"First":[121],"(GF)":[122],"High-K":[123],"Metal":[124,136],"(HKMG)":[126],"Fully":[127],"Depleted":[128],"Silicon":[129],"on":[130],"Insulator":[131],"(FDSOI)":[132],"MOSFETs":[133],"Replacement":[135],"(RMG)":[138],"HKMG":[139],"SOI":[140],"FinFETs":[141],"(SOIFF).":[142]},"counts_by_year":[{"year":2024,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":5}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}