{"id":"https://openalex.org/W3038140782","doi":"https://doi.org/10.1109/irps45951.2020.9129220","title":"Reliability of 200mm E-mode GaN-on-Si Power HEMTs","display_name":"Reliability of 200mm E-mode GaN-on-Si Power HEMTs","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3038140782","doi":"https://doi.org/10.1109/irps45951.2020.9129220","mag":"3038140782"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9129220","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129220","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085905051","display_name":"David C. Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"David C. Zhou","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072161328","display_name":"William Li","orcid":"https://orcid.org/0000-0002-2562-769X"},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"William Li","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072987232","display_name":"Jingyu Shen","orcid":"https://orcid.org/0000-0002-4472-5105"},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jingyu Shen","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100706679","display_name":"Leilei Chen","orcid":"https://orcid.org/0000-0002-1987-3878"},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Leilei Chen","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048619703","display_name":"Thomas Zhao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Thomas Zhao","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070679847","display_name":"Kent Lin","orcid":"https://orcid.org/0000-0002-2521-1328"},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kent Lin","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055461968","display_name":"Martin Jinye Zhang","orcid":"https://orcid.org/0000-0003-0006-2466"},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Martin Zhang","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068386655","display_name":"Larry Chen","orcid":"https://orcid.org/0000-0001-8358-8521"},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Larry Chen","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110694519","display_name":"Han C. Chiu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"H. C. Chiu","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077249620","display_name":"Jeff Zhang","orcid":"https://orcid.org/0000-0001-7411-8923"},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jeff Zhang","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]},{"author_position":"last","author":{"id":null,"display_name":"Roy K.-Y. Wong","orcid":null},"institutions":[{"id":"https://openalex.org/I4210165204","display_name":"Zhuhai Institute of Advanced Technology","ror":"https://ror.org/05r1mzq61","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210145761","https://openalex.org/I4210165204"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Roy K.-Y. Wong","raw_affiliation_strings":["R&D Division, Innoscience Technology, Zhuhai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Division, Innoscience Technology, Zhuhai, China","institution_ids":["https://openalex.org/I4210165204"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210165204"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7729846239089966},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6583990454673767},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6088670492172241},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5786288380622864},{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.545005738735199},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.49714115262031555},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44971051812171936},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.41284266114234924},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.35337501764297485},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.18844223022460938},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12834525108337402},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.1039612889289856},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.08552122116088867}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7729846239089966},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6583990454673767},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6088670492172241},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5786288380622864},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.545005738735199},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.49714115262031555},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44971051812171936},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.41284266114234924},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.35337501764297485},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18844223022460938},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12834525108337402},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1039612889289856},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.08552122116088867},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9129220","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129220","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.5099999904632568,"display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1779450721","https://openalex.org/W2584889330","https://openalex.org/W2593495332","https://openalex.org/W2809865532","https://openalex.org/W2956321830"],"related_works":["https://openalex.org/W2893117232","https://openalex.org/W2368982584","https://openalex.org/W957405543","https://openalex.org/W2100154643","https://openalex.org/W81629128","https://openalex.org/W2326159057","https://openalex.org/W1965743066","https://openalex.org/W1979157137","https://openalex.org/W2999187754","https://openalex.org/W2104841496"],"abstract_inverted_index":{"Reliability":[0],"of":[1,23,35,42,57,93],"commercial":[2],"100V":[3,76,114],"E-mode":[4,31,115],"GaN-on-Si":[5],"power":[6,117,123],"HEMTs":[7,25,118],"are":[8,26,119],"presented,":[9],"fabricated":[10],"on":[11,60],"an":[12],"industrial":[13],"200mm":[14,61,113],"Si":[15,62],"CMOS":[16],"compatible":[17],"Au-free":[18],"technology":[19],"platform.":[20],"Electrical":[21],"characteristics":[22],"GaN":[24,58,98,116],"discussed":[27],"first,":[28],"delivering":[29],"true":[30],"operation":[32,73],"with":[33,82],"Vth":[34],"~1.5V":[36],"and":[37,102,111],"ultralow":[38],"drain":[39],"leakage":[40],"current":[41,67],"<;":[43,87],"1e-10A/mm":[44],"at":[45,79],"fully":[46],"rated":[47],"100V.":[48],"Then,":[49],"for":[50,122],"the":[51,94,103],"first":[52],"time,":[53],"successful":[54],"JEDEC":[55],"qualification":[56],"transistors":[59],"substrate":[63],"is":[64,77],"reported.":[65],"Finally,":[66],"collapse":[68],"or":[69],"dynamic":[70],"Rds-on":[71],"free":[72],"up":[74],"to":[75],"demonstrated":[78],"100":[80],"kHz":[81],"a":[83],"stress-to-measure":[84],"delay":[85],"time":[86],"1":[88],"micro-second,":[89],"achieved":[90],"by":[91],"control":[92],"passivation/GaN":[95],"interface":[96],"traps,":[97,101],"epi":[99],"bulk":[100],"lateral/vertical":[104],"electric":[105],"fields.":[106],"In":[107],"summary,":[108],"high":[109],"performance":[110],"reliable":[112],"commercially":[120],"available":[121],"electronics":[124],"industry.":[125]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":2}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}