{"id":"https://openalex.org/W3040164841","doi":"https://doi.org/10.1109/irps45951.2020.9129158","title":"Efficient Bidirectional protection structure for Plasma induced damage (PID) and Electrostatic discharge (ESD) for 3D IC Integration","display_name":"Efficient Bidirectional protection structure for Plasma induced damage (PID) and Electrostatic discharge (ESD) for 3D IC Integration","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3040164841","doi":"https://doi.org/10.1109/irps45951.2020.9129158","mag":"3040164841"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9129158","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129158","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113909888","display_name":"Premachandran C.S.","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Premachandran C.S.","raw_affiliation_strings":["GLOBALFOUNDRIESUS Inc, Malta, New York, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIESUS Inc, Malta, New York, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013633689","display_name":"S. Cimino","orcid":"https://orcid.org/0000-0002-0947-1920"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Salvatore Cimino","raw_affiliation_strings":["GLOBALFOUNDRIESUS Inc, Malta, New York, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIESUS Inc, Malta, New York, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110817177","display_name":"Manjunatha Prabhu","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Manjunatha Prabhu","raw_affiliation_strings":["GLOBALFOUNDRIESUS Inc, Malta, New York, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIESUS Inc, Malta, New York, USA","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I35662394"],"apc_list":null,"apc_paid":null,"fwci":0.3577,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.43579413,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.8015005588531494},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7287271618843079},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6226955056190491},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6174801588058472},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6142898201942444},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.5279608964920044},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.4626738727092743},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.44797059893608093},{"id":"https://openalex.org/keywords/pid-controller","display_name":"PID controller","score":0.44110938906669617},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.42863529920578003},{"id":"https://openalex.org/keywords/plasma-processing","display_name":"Plasma processing","score":0.41444724798202515},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35386091470718384},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17643937468528748},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17472302913665771},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.06960558891296387},{"id":"https://openalex.org/keywords/temperature-control","display_name":"Temperature control","score":0.065513014793396}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.8015005588531494},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7287271618843079},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6226955056190491},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6174801588058472},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6142898201942444},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5279608964920044},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.4626738727092743},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.44797059893608093},{"id":"https://openalex.org/C47116090","wikidata":"https://www.wikidata.org/wiki/Q716829","display_name":"PID controller","level":3,"score":0.44110938906669617},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.42863529920578003},{"id":"https://openalex.org/C145738678","wikidata":"https://www.wikidata.org/wiki/Q4364316","display_name":"Plasma processing","level":3,"score":0.41444724798202515},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35386091470718384},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17643937468528748},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17472302913665771},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.06960558891296387},{"id":"https://openalex.org/C536315585","wikidata":"https://www.wikidata.org/wiki/Q7698332","display_name":"Temperature control","level":2,"score":0.065513014793396},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9129158","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9129158","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6399999856948853}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2093441630","https://openalex.org/W2119222311","https://openalex.org/W2154472289","https://openalex.org/W2799733996"],"related_works":["https://openalex.org/W2544244340","https://openalex.org/W2002388147","https://openalex.org/W2124694210","https://openalex.org/W3098928304","https://openalex.org/W2153609444","https://openalex.org/W2394883510","https://openalex.org/W3160715487","https://openalex.org/W1482270496","https://openalex.org/W2150958483","https://openalex.org/W2011560271"],"abstract_inverted_index":{"During":[0],"metal/dielectric":[1],"plasma":[2,23,52],"processing":[3],"for":[4,81,94],"the":[5,9,14,22,47,57,84,111,121],"back":[6,136],"end":[7],"of":[8,13,40],"line":[10],"(BEOL),":[11],"degradation":[12,27],"transistor":[15,112],"gate":[16,113],"oxide":[17,114],"may":[18],"occur":[19],"due":[20,132],"to":[21,35,49,109,133,143,145],"discharge":[24,96],"current.":[25],"This":[26],"can":[28],"create":[29],"a":[30,41,104],"functional":[31],"failure":[32],"or":[33],"lead":[34],"future":[36],"reliability":[37],"issues.":[38],"Diodes":[39],"specific":[42],"size":[43],"are":[44,79],"incorporated":[45],"into":[46],"chip":[48,142],"protect":[50,110],"from":[51,115],"induced":[53],"damage":[54,98],"(PID)":[55],"during":[56,99,120,141],"BEOL":[58],"processing.":[59],"In":[60,101],"3D":[61,122],"integrated":[62],"circuits":[63],"(IC)":[64],"additional":[65],"processes":[66,138],"such":[67],"as":[68],"through":[69],"silicon":[70],"via":[71],"(TSV)":[72],"etching":[73],"and":[74,118,135,139],"backside":[75],"redistribution":[76],"layer":[77],"(RDL)":[78],"accounted":[80],"in":[82],"deciding":[83],"diode":[85,88,106,129],"size.":[86],"Additional":[87],"protection":[89,128],"structure":[90],"is":[91,107],"also":[92],"used":[93],"electrostatic":[95],"(ESD)":[97],"fab/assembly.":[100],"this":[102],"study,":[103],"bidirectional":[105],"proposed":[108],"both":[116],"PID":[117,131],"ESD":[119,140],"IC":[123],"integration":[124],"process.":[125,148],"The":[126],"combined":[127],"addresses":[130],"front":[134],"side":[137],"chip/wafer":[144],"wafer":[146],"bonding":[147]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-08-12T21:12:35.861297","created_date":"2025-10-10T00:00:00"}