{"id":"https://openalex.org/W3039564247","doi":"https://doi.org/10.1109/irps45951.2020.9128358","title":"Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling","display_name":"Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3039564247","doi":"https://doi.org/10.1109/irps45951.2020.9128358","mag":"3039564247"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9128358","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128358","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002653396","display_name":"Enrico Zanoni","orcid":"https://orcid.org/0000-0001-7349-9656"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"Enrico Zanoni","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059611177","display_name":"Matteo Meneghini","orcid":"https://orcid.org/0000-0003-2421-505X"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Matteo Meneghini","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101587480","display_name":"Gaudenzio Meneghesso","orcid":"https://orcid.org/0000-0002-6715-4827"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Gaudenzio Meneghesso","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033707390","display_name":"Fabiana Rampazzo","orcid":"https://orcid.org/0000-0002-2418-4831"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Fabiana Rampazzo","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041414067","display_name":"Daniele Marcon","orcid":null},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Daniele Marcon","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041683398","display_name":"Ver\u00f3nica Gao Zhan","orcid":null},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Veronica Gao Zhan","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038436348","display_name":"Francesca Chiocchetta","orcid":null},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Francesca Chiocchetta","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084844277","display_name":"Andreas Graff","orcid":null},"institutions":[{"id":"https://openalex.org/I4210152728","display_name":"Fraunhofer Institute for Microstructure of Materials and Systems","ror":"https://ror.org/050mbz718","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210152728","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Andreas Graff","raw_affiliation_strings":["IMWS Fraunhofer Institute, Halle, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMWS Fraunhofer Institute, Halle, Germany","institution_ids":["https://openalex.org/I4210152728"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083143279","display_name":"Frank Altmann","orcid":"https://orcid.org/0000-0002-0202-1193"},"institutions":[{"id":"https://openalex.org/I4210152728","display_name":"Fraunhofer Institute for Microstructure of Materials and Systems","ror":"https://ror.org/050mbz718","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210152728","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Frank Altmann","raw_affiliation_strings":["IMWS Fraunhofer Institute, Halle, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMWS Fraunhofer Institute, Halle, Germany","institution_ids":["https://openalex.org/I4210152728"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079710213","display_name":"M. Simon-Najasek","orcid":null},"institutions":[{"id":"https://openalex.org/I4210152728","display_name":"Fraunhofer Institute for Microstructure of Materials and Systems","ror":"https://ror.org/050mbz718","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210152728","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Michel Simon-Najasek","raw_affiliation_strings":["IMWS Fraunhofer Institute, Halle, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMWS Fraunhofer Institute, Halle, Germany","institution_ids":["https://openalex.org/I4210152728"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031117460","display_name":"David Poppitz","orcid":"https://orcid.org/0000-0001-6432-9102"},"institutions":[{"id":"https://openalex.org/I4210152728","display_name":"Fraunhofer Institute for Microstructure of Materials and Systems","ror":"https://ror.org/050mbz718","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210152728","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"David Poppitz","raw_affiliation_strings":["IMWS Fraunhofer Institute, Halle, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMWS Fraunhofer Institute, Halle, Germany","institution_ids":["https://openalex.org/I4210152728"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5002653396"],"corresponding_institution_ids":["https://openalex.org/I138689650"],"apc_list":null,"apc_paid":null,"fwci":1.262,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.78885442,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"10"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7682404518127441},{"id":"https://openalex.org/keywords/microwave","display_name":"Microwave","score":0.5852993130683899},{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.584327220916748},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.577801525592804},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.49234306812286377},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4898826479911804},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.46759361028671265},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.4658791422843933},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4506915509700775},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3300800919532776},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.28513631224632263},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2419862449169159},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.21693691611289978},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.21484872698783875},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2094360589981079},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15837913751602173},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.14753705263137817}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7682404518127441},{"id":"https://openalex.org/C44838205","wikidata":"https://www.wikidata.org/wiki/Q127995","display_name":"Microwave","level":2,"score":0.5852993130683899},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.584327220916748},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.577801525592804},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.49234306812286377},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4898826479911804},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.46759361028671265},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.4658791422843933},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4506915509700775},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3300800919532776},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.28513631224632263},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2419862449169159},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.21693691611289978},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.21484872698783875},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2094360589981079},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15837913751602173},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.14753705263137817},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":4,"locations":[{"id":"doi:10.1109/irps45951.2020.9128358","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128358","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:fraunhofer.de:N-602792","is_oa":false,"landing_page_url":"http://publica.fraunhofer.de/documents/N-602792.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306400801","display_name":"Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Fraunhofer IMWS","raw_type":"Conference Paper"},{"id":"pmh:oai:publica.fraunhofer.de:publica/408961","is_oa":false,"landing_page_url":"https://publica.fraunhofer.de/handle/publica/408961","pdf_url":null,"source":{"id":"https://openalex.org/S4306400318","display_name":"Fraunhofer-Publica (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"conference paper"},{"id":"pmh:oai:www.research.unipd.it:11577/3349640","is_oa":false,"landing_page_url":"http://hdl.handle.net/11577/3349640","pdf_url":null,"source":{"id":"https://openalex.org/S4377196283","display_name":"Research Padua  Archive (University of Padua)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I138689650","host_organization_name":"University of Padua","host_organization_lineage":["https://openalex.org/I138689650"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Responsible consumption and production","id":"https://metadata.un.org/sdg/12","score":0.4300000071525574}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W794025159","https://openalex.org/W1543099760","https://openalex.org/W1547125045","https://openalex.org/W1635303108","https://openalex.org/W1638653373","https://openalex.org/W1891533307","https://openalex.org/W2005633529","https://openalex.org/W2027110522","https://openalex.org/W2041804797","https://openalex.org/W2047611792","https://openalex.org/W2056457222","https://openalex.org/W2086610244","https://openalex.org/W2088076360","https://openalex.org/W2100897792","https://openalex.org/W2161751664","https://openalex.org/W2170542824","https://openalex.org/W2474381665","https://openalex.org/W2583960850","https://openalex.org/W2738660810","https://openalex.org/W2743080949","https://openalex.org/W2753242578","https://openalex.org/W2753776182","https://openalex.org/W2769520103","https://openalex.org/W2799593141","https://openalex.org/W2802266913","https://openalex.org/W2894765244","https://openalex.org/W2894939777","https://openalex.org/W3005551923","https://openalex.org/W3186827714"],"related_works":["https://openalex.org/W2893117232","https://openalex.org/W2368982584","https://openalex.org/W957405543","https://openalex.org/W2100154643","https://openalex.org/W81629128","https://openalex.org/W2326159057","https://openalex.org/W1965743066","https://openalex.org/W1979157137","https://openalex.org/W2949086270","https://openalex.org/W2552843904"],"abstract_inverted_index":{"This":[0],"paper":[1],"reviews":[2],"failure":[3],"modes":[4],"and":[5,12,19,37,55,147,152],"mechanisms":[6],"of":[7,35,43,63,96,105,135],"0.5":[8],"\u03bcm,":[9],"0.25":[10,59],"\u03bcm":[11,14,60],"0.15":[13,177],"AlGaN/GaN":[15],"HEMTs":[16,170],"for":[17,113,160,168],"microwave":[18],"millimeter-wave":[20],"applications.":[21],"Early":[22],"devices":[23,61],"adopting":[24,51],"Ni/Pt/Au":[25],"metallization":[26,54],"were":[27],"found":[28],"to":[29],"be":[30],"affected":[31],"by":[32,40,50],"sidewall":[33],"interdiffusion":[34],"Au":[36],"O,":[38],"followed":[39],"electrochemical":[41],"oxidation":[42],"AlGaN,":[44],"a":[45,52,93,102,132],"problem":[46],"which":[47,109,144,163],"was":[48],"solved":[49],"new":[53],"passivation":[56],"scheme":[57],"providing":[58],"capable":[62],"withstanding":[64],"24h":[65],"at":[66],"V":[67],"<sub":[68,75,173],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[69,76,174],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DS</sub>":[70],"=":[71,78],"60V,":[72],"on-state,":[73],"T":[74],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ch</sub>":[77],"375\u00b0C":[79],"with":[80,89],"no":[81,90,111],"failure.":[82],"4000":[83],"h":[84],"long-term":[85],"thermal":[86],"storage":[87],"tests":[88,130,138,155],"bias":[91],"identified":[92],"non-monotonic":[94],"behaviour":[95],"gate":[97,106],"Schottky":[98],"barrier":[99],"height,":[100],"causing":[101],"temporary":[103],"increase":[104,134,145],"leakage":[107],"current":[108],"presented":[110],"risk":[112],"device":[114],"reliability.":[115],"Beside":[116],"contact-related":[117],"degradation":[118],"mechanisms,":[119],"hot":[120],"electron":[121],"effects":[122],"become":[123],"increasingly":[124],"more":[125],"relevant":[126],"during":[127],"DC":[128],"life":[129],"(inducing":[131],"10%":[133],"on-resistance),":[136],"rf":[137,149],"(creating":[139],"or":[140],"re-activating":[141],"deep":[142],"levels,":[143],"current-collapse":[146],"reduce":[148],"output":[150],"power":[151],"gain).":[153],"RF":[154],"are":[156],"the":[157,165],"harshest":[158],"ones":[159],"hot-electron":[161],"degradation,":[162],"represents":[164],"limiting":[166],"factor":[167],"GaN":[169],"having":[171],"L":[172],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">G</sub>":[175],"\u2264":[176],"\u03bcm.":[178]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1}],"updated_date":"2026-05-08T15:41:06.802602","created_date":"2020-07-10T00:00:00"}