{"id":"https://openalex.org/W3038543181","doi":"https://doi.org/10.1109/irps45951.2020.9128356","title":"Impact of X-Ray Radiation on the Reliability of Logic Integrated Circuits","display_name":"Impact of X-Ray Radiation on the Reliability of Logic Integrated Circuits","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3038543181","doi":"https://doi.org/10.1109/irps45951.2020.9128356","mag":"3038543181"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9128356","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128356","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006439181","display_name":"Somayyeh Rahimi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210127875","display_name":"Nvidia (United States)","ror":"https://ror.org/03jdj4y14","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127875"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Somayyeh Rahimi","raw_affiliation_strings":["NVIDIA Corporation, Santa Clara, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NVIDIA Corporation, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I4210127875"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101982381","display_name":"Christian Schmidt","orcid":"https://orcid.org/0000-0003-1416-4762"},"institutions":[{"id":"https://openalex.org/I4210127875","display_name":"Nvidia (United States)","ror":"https://ror.org/03jdj4y14","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127875"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Christian Schmidt","raw_affiliation_strings":["NVIDIA Corporation, Santa Clara, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NVIDIA Corporation, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I4210127875"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113657206","display_name":"Joy Liao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210127875","display_name":"Nvidia (United States)","ror":"https://ror.org/03jdj4y14","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127875"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joy Liao","raw_affiliation_strings":["NVIDIA Corporation, Santa Clara, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NVIDIA Corporation, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I4210127875"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020502453","display_name":"Howard Marks","orcid":null},"institutions":[{"id":"https://openalex.org/I4210127875","display_name":"Nvidia (United States)","ror":"https://ror.org/03jdj4y14","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127875"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Howard Lee Marks","raw_affiliation_strings":["NVIDIA Corporation, Santa Clara, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NVIDIA Corporation, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I4210127875"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5082947249","display_name":"Kyung Mo Shin","orcid":null},"institutions":[{"id":"https://openalex.org/I4210127875","display_name":"Nvidia (United States)","ror":"https://ror.org/03jdj4y14","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127875"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kyung Mo Shin","raw_affiliation_strings":["NVIDIA Corporation, Santa Clara, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NVIDIA Corporation, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I4210127875"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5006439181"],"corresponding_institution_ids":["https://openalex.org/I4210127875"],"apc_list":null,"apc_paid":null,"fwci":0.208,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.50778861,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"64","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/iddq-testing","display_name":"Iddq testing","score":0.7189517617225647},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6016888618469238},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5260791182518005},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.5245459675788879},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.4994332790374756},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.46880394220352173},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.44117239117622375},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4358171224594116},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.4338650703430176},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.433574378490448},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4277417063713074},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4120793044567108},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.37893301248550415},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37659090757369995},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.34153467416763306},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.27900955080986023},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2735651135444641},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.14131829142570496},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12655150890350342},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.08981066942214966}],"concepts":[{"id":"https://openalex.org/C206678392","wikidata":"https://www.wikidata.org/wiki/Q5987815","display_name":"Iddq testing","level":3,"score":0.7189517617225647},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6016888618469238},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5260791182518005},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.5245459675788879},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4994332790374756},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.46880394220352173},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.44117239117622375},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4358171224594116},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.4338650703430176},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.433574378490448},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4277417063713074},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4120793044567108},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.37893301248550415},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37659090757369995},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.34153467416763306},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.27900955080986023},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2735651135444641},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.14131829142570496},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12655150890350342},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.08981066942214966},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9128356","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128356","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.6299999952316284}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1570807142","https://openalex.org/W1974332486","https://openalex.org/W2005688043","https://openalex.org/W2059214545","https://openalex.org/W2100267651","https://openalex.org/W2124662557","https://openalex.org/W2131271035","https://openalex.org/W2148071019","https://openalex.org/W2148571009","https://openalex.org/W6679223766"],"related_works":["https://openalex.org/W2164017138","https://openalex.org/W2181536841","https://openalex.org/W2946329844","https://openalex.org/W2121399123","https://openalex.org/W1549631873","https://openalex.org/W188508038","https://openalex.org/W2140747718","https://openalex.org/W3215142653","https://openalex.org/W1487051936","https://openalex.org/W2912670917"],"abstract_inverted_index":{"X-Ray":[0],"imaging":[1],"is":[2,39,63],"widely":[3],"used":[4],"in":[5,41,47],"the":[6,23,42,48,54,68,73],"semiconductor":[7],"industry,":[8],"for":[9,13],"failure":[10],"analysis":[11],"and":[12,53],"in-line":[14],"inspection":[15],"of":[16,26,44,50,56],"surface":[17],"mount":[18],"devices.":[19],"Here,":[20],"we":[21],"investigate":[22],"TID-induced":[24],"degradation":[25,38,70],"logic":[27],"ICs,":[28],"which":[29],"happens":[30],"after":[31],"long-term":[32],"exposure":[33],"to":[34,65],"X-Ray.":[35],"The":[36],"observed":[37],"mainly":[40],"form":[43],"an":[45],"increase":[46],"leakage":[49,69],"input/output":[51],"pins":[52],"IDDQ":[55],"their":[57],"circuitry.":[58],"Annealing":[59],"at":[60],"high":[61],"temperature":[62],"shown":[64],"partially":[66],"recover":[67],"caused":[71],"by":[72],"radiation.":[74]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-05-08T15:41:06.802602","created_date":"2025-10-10T00:00:00"}