{"id":"https://openalex.org/W3039797201","doi":"https://doi.org/10.1109/irps45951.2020.9128352","title":"High Frequency TDDB of Reinforced Isolation Dielectric Systems","display_name":"High Frequency TDDB of Reinforced Isolation Dielectric Systems","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3039797201","doi":"https://doi.org/10.1109/irps45951.2020.9128352","mag":"3039797201"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9128352","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128352","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108657947","display_name":"Tom Bonifield","orcid":null},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]},{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Tom Bonifield","raw_affiliation_strings":["Analog Technology Development Department, Texas Instruments Inc., Dallas Texas, USA","Texas Instruments Inc.,Analog Technology Development Department,Dallas Texas,USA,75265"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Analog Technology Development Department, Texas Instruments Inc., Dallas Texas, USA","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"Texas Instruments Inc.,Analog Technology Development Department,Dallas Texas,USA,75265","institution_ids":["https://openalex.org/I117023288","https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112012253","display_name":"Honglin Guo","orcid":"https://orcid.org/0000-0001-9723-509X"},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]},{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Honglin Guo","raw_affiliation_strings":["Analog Technology Development Department, Texas Instruments Inc., Dallas Texas, USA","Texas Instruments Inc.,Analog Technology Development Department,Dallas Texas,USA,75265"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Analog Technology Development Department, Texas Instruments Inc., Dallas Texas, USA","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"Texas Instruments Inc.,Analog Technology Development Department,Dallas Texas,USA,75265","institution_ids":["https://openalex.org/I117023288","https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111946587","display_name":"J. West","orcid":null},"institutions":[{"id":"https://openalex.org/I117023288","display_name":"Analog Devices (United States)","ror":"https://ror.org/01545pm61","country_code":"US","type":"company","lineage":["https://openalex.org/I117023288"]},{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jeff West","raw_affiliation_strings":["Analog Technology Development Department, Texas Instruments Inc., Dallas Texas, USA","Texas Instruments Inc.,Analog Technology Development Department,Dallas Texas,USA,75265"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Analog Technology Development Department, Texas Instruments Inc., Dallas Texas, USA","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"Texas Instruments Inc.,Analog Technology Development Department,Dallas Texas,USA,75265","institution_ids":["https://openalex.org/I117023288","https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035837681","display_name":"H. Shichijo","orcid":"https://orcid.org/0000-0002-7593-388X"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hisashi Shichijo","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Texas at Dallas, Richardson Texas, USA","University of Texas at Dallas,Department of Electrical and Computer Engineering,Richardson Texas,USA,75080"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Texas at Dallas, Richardson Texas, USA","institution_ids":["https://openalex.org/I162577319"]},{"raw_affiliation_string":"University of Texas at Dallas,Department of Electrical and Computer Engineering,Richardson Texas,USA,75080","institution_ids":["https://openalex.org/I162577319"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036331442","display_name":"Talha Tahir","orcid":"https://orcid.org/0000-0003-1018-3704"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Talha Tahir","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Texas at Dallas, Richardson Texas, USA","University of Texas at Dallas,Department of Electrical and Computer Engineering,Richardson Texas,USA,75080"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Texas at Dallas, Richardson Texas, USA","institution_ids":["https://openalex.org/I162577319"]},{"raw_affiliation_string":"University of Texas at Dallas,Department of Electrical and Computer Engineering,Richardson Texas,USA,75080","institution_ids":["https://openalex.org/I162577319"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10511","display_name":"High voltage insulation and dielectric phenomena","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10511","display_name":"High voltage insulation and dielectric phenomena","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11343","display_name":"Power Transformer Diagnostics and Insulation","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12737","display_name":"Electrical Fault Detection and Protection","score":0.996399998664856,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.8443751931190491},{"id":"https://openalex.org/keywords/waveform","display_name":"Waveform","score":0.7419008612632751},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6996257305145264},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6246265172958374},{"id":"https://openalex.org/keywords/partial-discharge","display_name":"Partial discharge","score":0.6034871339797974},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.5843531489372253},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5669865012168884},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5424512028694153},{"id":"https://openalex.org/keywords/isolation","display_name":"Isolation (microbiology)","score":0.5120999813079834},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.4642202854156494},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.45831698179244995},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.44149544835090637},{"id":"https://openalex.org/keywords/electric-breakdown","display_name":"Electric breakdown","score":0.42697247862815857},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3815177083015442},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3705979287624359},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25588566064834595},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12402510643005371},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.10275906324386597},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.09343874454498291}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.8443751931190491},{"id":"https://openalex.org/C197424946","wikidata":"https://www.wikidata.org/wiki/Q1165717","display_name":"Waveform","level":3,"score":0.7419008612632751},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6996257305145264},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6246265172958374},{"id":"https://openalex.org/C130143024","wikidata":"https://www.wikidata.org/wiki/Q1929972","display_name":"Partial discharge","level":3,"score":0.6034871339797974},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.5843531489372253},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5669865012168884},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5424512028694153},{"id":"https://openalex.org/C2775941552","wikidata":"https://www.wikidata.org/wiki/Q25212305","display_name":"Isolation (microbiology)","level":2,"score":0.5120999813079834},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.4642202854156494},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45831698179244995},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.44149544835090637},{"id":"https://openalex.org/C2984221369","wikidata":"https://www.wikidata.org/wiki/Q422584","display_name":"Electric breakdown","level":3,"score":0.42697247862815857},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3815177083015442},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3705979287624359},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25588566064834595},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12402510643005371},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.10275906324386597},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.09343874454498291},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0},{"id":"https://openalex.org/C89423630","wikidata":"https://www.wikidata.org/wiki/Q7193","display_name":"Microbiology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9128352","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128352","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Sustainable cities and communities","score":0.5699999928474426,"id":"https://metadata.un.org/sdg/11"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1867043128","https://openalex.org/W2070504604","https://openalex.org/W2123920417","https://openalex.org/W2164707404","https://openalex.org/W2172089819"],"related_works":["https://openalex.org/W2143549112","https://openalex.org/W2013766968","https://openalex.org/W2096883691","https://openalex.org/W2019750744","https://openalex.org/W3039797201","https://openalex.org/W2018145886","https://openalex.org/W2430838039","https://openalex.org/W1966664673","https://openalex.org/W2536266242","https://openalex.org/W2548139254"],"abstract_inverted_index":{"Reinforced":[0],"isolation":[1],"provides":[2],"protection":[3],"of":[4,62],"equipment":[5],"and":[6,66,68],"operators":[7],"that":[8,15,24,40,77],"interact":[9],"with":[10],"high":[11,34],"voltage":[12,35],"domains.":[13],"Standards":[14],"define":[16],"it":[17],"have":[18],"evolved":[19],"over":[20],"time":[21,44],"from":[22],"those":[23,39],"require":[25,42],"only":[26],"partial":[27],"discharge":[28],"to":[29,38],"confirm":[30],"reliability":[31],"at":[32],"the":[33,60,82],"operating":[36],"conditions,":[37],"also":[41],"a":[43],"dependent":[45],"dielectric":[46],"breakdown":[47],"model":[48],"(TDDB)":[49],"for":[50],"verifying":[51],"reliable":[52],"working":[53],"voltage.":[54],"In":[55],"this":[56],"paper":[57],"we":[58],"assess":[59],"impact":[61],"AC":[63],"frequency,":[64],"waveform,":[65],"rise":[67],"fall":[69],"times":[70],"on":[71],"lifetime,":[72],"which":[73],"are":[74,78],"important":[75],"parameters":[76],"not":[79],"included":[80],"in":[81],"current":[83],"standards.":[84]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-07-22T07:51:19.307946","created_date":"2025-10-10T00:00:00"}