{"id":"https://openalex.org/W3040630941","doi":"https://doi.org/10.1109/irps45951.2020.9128334","title":"\u201cShift and Match\u201d (S\u2026M) method for channel mobility correction in degraded MOSFETs","display_name":"\u201cShift and Match\u201d (S\u2026M) method for channel mobility correction in degraded MOSFETs","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3040630941","doi":"https://doi.org/10.1109/irps45951.2020.9128334","mag":"3040630941"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9128334","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128334","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5044802124","display_name":"Linglin Jing","orcid":"https://orcid.org/0000-0003-1287-4066"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Linglin Jing","raw_affiliation_strings":["National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai, P. R. China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai, P. R. China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008578458","display_name":"Rui Gao","orcid":"https://orcid.org/0000-0001-7400-3931"},"institutions":[{"id":"https://openalex.org/I4210113818","display_name":"China Electronic Product Reliability and Environmental Test Institute","ror":"https://ror.org/01f4k3b46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210113818"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rui Gao","raw_affiliation_strings":["China Electronic Product Reliability and Environment Research Institute, Guangzhou, P. R. China"],"affiliations":[{"raw_affiliation_string":"China Electronic Product Reliability and Environment Research Institute, Guangzhou, P. R. China","institution_ids":["https://openalex.org/I4210113818"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058083493","display_name":"Zhigang Ji","orcid":"https://orcid.org/0000-0003-1138-804X"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhigang Ji","raw_affiliation_strings":["National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai, P. R. China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai, P. R. China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002760019","display_name":"Runsheng Wang","orcid":"https://orcid.org/0000-0002-7514-0767"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Runsheng Wang","raw_affiliation_strings":["Institute of Microelectronics, Peking University, P. R. China"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Peking University, P. R. China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5044802124"],"corresponding_institution_ids":["https://openalex.org/I183067930"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.05839904,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"41","issue":null,"first_page":"1","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5591407418251038},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.47331225872039795},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.46277058124542236},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.43367788195610046},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.4228053092956543},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.29180437326431274},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.12219801545143127},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.12121754884719849}],"concepts":[{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5591407418251038},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.47331225872039795},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.46277058124542236},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.43367788195610046},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.4228053092956543},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.29180437326431274},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.12219801545143127},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.12121754884719849},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9128334","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128334","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W2012168675","https://openalex.org/W2015873494","https://openalex.org/W2023438220","https://openalex.org/W2042002599","https://openalex.org/W2059013593","https://openalex.org/W2064548291","https://openalex.org/W2068618467","https://openalex.org/W2069389959","https://openalex.org/W2074220705","https://openalex.org/W2078482863","https://openalex.org/W2083593237","https://openalex.org/W2086103622","https://openalex.org/W2086126257","https://openalex.org/W2086739087","https://openalex.org/W2104550515","https://openalex.org/W2105990677","https://openalex.org/W2114372440","https://openalex.org/W2117131072","https://openalex.org/W2127712136","https://openalex.org/W2134361229","https://openalex.org/W2134432234","https://openalex.org/W2137670291","https://openalex.org/W2139424966","https://openalex.org/W2144545104","https://openalex.org/W2146350499","https://openalex.org/W2148127344","https://openalex.org/W2151208895","https://openalex.org/W2155916338","https://openalex.org/W2161990408","https://openalex.org/W2168480980","https://openalex.org/W2170449166","https://openalex.org/W2172179990","https://openalex.org/W2220341401","https://openalex.org/W2499844158","https://openalex.org/W2540699116","https://openalex.org/W2981743243","https://openalex.org/W6672141146"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W2051487156","https://openalex.org/W2073681303","https://openalex.org/W2390279801","https://openalex.org/W2358668433","https://openalex.org/W4396701345","https://openalex.org/W2376932109","https://openalex.org/W2001405890","https://openalex.org/W4396696052"],"abstract_inverted_index":{"Mobility":[0],"degradation":[1,55,65,146,160],"due":[2],"to":[3,44,88],"generation":[4],"of":[5,31,46,61,128],"defects":[6],"is":[7,14,66,86,156],"a":[8,52,79],"well-known":[9],"phenomenon.":[10],"Split":[11],"C~V":[12,40],"technique":[13,23,41],"the":[15,29,38,47,62,76],"most":[16],"widely":[17],"used":[18],"experimental":[19],"method.":[20],"However,":[21],"this":[22,73,131,142],"can":[24,36,161],"induce":[25],"large":[26],"error":[27,129],"in":[28,130],"presence":[30],"generated":[32,91],"fast":[33,92],"states:":[34],"they":[35],"distort":[37],"split":[39],"and":[42,82,115],"lead":[43],"over-estimation":[45],"mobile":[48],"channel":[49],"carriers.":[50],"As":[51],"consequence,":[53],"mobility":[54,63,145,159],"will":[56],"be":[57,162],"over-estimated.":[58],"Accurate":[59],"determination":[60],"after":[64,152],"critical":[67],"for":[68,75],"time-dependent":[69],"reliability":[70],"modeling.":[71],"In":[72],"work,":[74],"first":[77],"time,":[78],"new":[80,132],"\"Shift":[81],"Match\"":[83],"(S&M)":[84],"method":[85],"proposed":[87],"determine":[89],"these":[90],"states":[93],"based":[94],"on":[95,141,150],"experimentally":[96],"measured":[97],"I":[98],"<sub":[99,103,108,112,117,121],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[100,104,109,113,118,122],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">d</sub>":[101],"~V":[102,111,120],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">g</sub>":[105,114,123],",":[106],"C":[107,116],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">gc</sub>":[110],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">gb</sub>":[119],"data.":[124],"The":[125],"potential":[126],"sources":[127],"method,":[133,143],"including":[134],"series":[135],"resistance":[136],"have":[137],"been":[138,148],"investigated.":[139],"Based":[140],"hole":[144],"has":[147],"re-evaluated":[149],"pMOSFET":[151],"NBTI":[153],"stress.":[154],"It":[155],"found":[157],"that":[158],"over-estimated":[163],"by":[164],"more":[165],"than":[166],"50%.":[167]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}