{"id":"https://openalex.org/W3038509307","doi":"https://doi.org/10.1109/irps45951.2020.9128330","title":"Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching","display_name":"Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3038509307","doi":"https://doi.org/10.1109/irps45951.2020.9128330","mag":"3038509307"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9128330","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128330","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5082418616","display_name":"Joseph P. Kozak","orcid":"https://orcid.org/0000-0002-4308-6815"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joseph P. Kozak","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003393009","display_name":"Ruizhe Zhang","orcid":"https://orcid.org/0000-0002-6937-7653"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ruizhe Zhang","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006957001","display_name":"Jingcun Liu","orcid":"https://orcid.org/0000-0002-6155-1450"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jingcun Liu","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029796490","display_name":"Khai D. T. Ngo","orcid":"https://orcid.org/0000-0002-0326-3055"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Khai D. T. Ngo","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089728227","display_name":"Yuhao Zhang","orcid":"https://orcid.org/0000-0001-6350-4861"},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuhao Zhang","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA","institution_ids":["https://openalex.org/I859038795"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I859038795"],"apc_list":null,"apc_paid":null,"fwci":1.4313,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.78335419,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":97},"biblio":{"volume":"51","issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/overvoltage","display_name":"Overvoltage","score":0.8380824327468872},{"id":"https://openalex.org/keywords/overcurrent","display_name":"Overcurrent","score":0.7322413921356201},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.6884119510650635},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5672545433044434},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5130592584609985},{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.48621073365211487},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.47141405940055847},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.458827942609787},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.4539865553379059},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.4452452063560486},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.42217588424682617},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.40136146545410156},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3485511839389801},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3148214817047119},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20413467288017273}],"concepts":[{"id":"https://openalex.org/C15703209","wikidata":"https://www.wikidata.org/wiki/Q333883","display_name":"Overvoltage","level":3,"score":0.8380824327468872},{"id":"https://openalex.org/C47949032","wikidata":"https://www.wikidata.org/wiki/Q663542","display_name":"Overcurrent","level":3,"score":0.7322413921356201},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6884119510650635},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5672545433044434},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5130592584609985},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.48621073365211487},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47141405940055847},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.458827942609787},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4539865553379059},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4452452063560486},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42217588424682617},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.40136146545410156},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3485511839389801},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3148214817047119},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20413467288017273},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps45951.2020.9128330","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128330","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:hub.hku.hk:10722/352199","is_oa":false,"landing_page_url":"https://hub.hku.hk/handle/10722/352199","pdf_url":null,"source":{"id":"https://openalex.org/S4377196271","display_name":"The HKU Scholars Hub (University of Hong Kong)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I889458895","host_organization_name":"University of Hong Kong","host_organization_lineage":["https://openalex.org/I889458895"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Conference_Paper"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1956765470","https://openalex.org/W2092332957","https://openalex.org/W2095061009","https://openalex.org/W2170737699","https://openalex.org/W2290172580","https://openalex.org/W2524444794","https://openalex.org/W2540317896","https://openalex.org/W2611334169","https://openalex.org/W2621250804","https://openalex.org/W2781032554","https://openalex.org/W2898682865","https://openalex.org/W2899713347","https://openalex.org/W2914811080","https://openalex.org/W2914893095","https://openalex.org/W2967146328","https://openalex.org/W2990173831","https://openalex.org/W2997369506","https://openalex.org/W3037334168","https://openalex.org/W3184030968","https://openalex.org/W4242130934","https://openalex.org/W6766537143","https://openalex.org/W6798925082"],"related_works":["https://openalex.org/W2368502324","https://openalex.org/W2371568379","https://openalex.org/W1980297247","https://openalex.org/W4386857783","https://openalex.org/W2379815176","https://openalex.org/W2356263519","https://openalex.org/W4324121414","https://openalex.org/W2187095416","https://openalex.org/W2123056991","https://openalex.org/W1548482929"],"abstract_inverted_index":{"This":[0,39],"work":[1],"presents":[2],"the":[3,10,58,61,64,79,88,101,108,112,116,121,126],"ruggedness":[4],"of":[5,49,94],"SiC":[6],"power":[7],"MOSFETs":[8],"outside":[9],"safe-operating-area":[11],"(SOA)":[12],"conditions":[13],"based":[14],"on":[15],"a":[16],"hard-switching":[17],"cycling":[18,41],"test.":[19],"The":[20,70,92],"device":[21,97,110,128],"was":[22,43],"stressed":[23],"to":[24,85],"withstand":[25],"overvoltage":[26],"and":[27,32,51,60],"overcurrent":[28],"beyond":[29],"their":[30],"voltage":[31],"current":[33],"ratings":[34],"in":[35,78,120],"each":[36],"switching":[37,40],"cycle.":[38],"test":[42],"performed":[44],"at":[45,57,63,87],"an":[46],"ambient":[47,90],"temperature":[48],"25oC":[50],"100oC.":[52],"Two":[53],"independent":[54],"degradations,":[55],"one":[56],"gate-oxide":[59,104],"other":[62],"semiconductor":[65],"junction":[66],"region,":[67],"were":[68,83,99],"observed.":[69],"second":[71,127],"degradation":[72,105],"has":[73],"not":[74],"been":[75],"previously":[76],"reported":[77],"literature.":[80],"Both":[81],"degradations":[82,98],"found":[84],"accelerate":[86],"high":[89],"temperature.":[91],"physics":[93],"these":[95],"two":[96],"unveiled:":[100],"hot-electron":[102],"induced":[103],"accounts":[106,124],"for":[107,125],"first":[109],"degradation;":[111],"electron":[113],"hopping":[114],"through":[115],"defect":[117],"states":[118],"created":[119],"stress":[122],"tests":[123],"degradation.":[129]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":4}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}