{"id":"https://openalex.org/W3039915338","doi":"https://doi.org/10.1109/irps45951.2020.9128318","title":"Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs","display_name":"Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs","publication_year":2020,"publication_date":"2020-04-01","ids":{"openalex":"https://openalex.org/W3039915338","doi":"https://doi.org/10.1109/irps45951.2020.9128318","mag":"3039915338"},"language":"en","primary_location":{"id":"doi:10.1109/irps45951.2020.9128318","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128318","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5004545841","display_name":"Amartya Ghosh","orcid":"https://orcid.org/0000-0002-7401-3440"},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Amartya Ghosh","raw_affiliation_strings":["ON Semiconductor, South Portland, ME, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, South Portland, ME, USA","institution_ids":["https://openalex.org/I100625452"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102861311","display_name":"Jifa Hao","orcid":"https://orcid.org/0000-0003-1790-0024"},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jifa Hao","raw_affiliation_strings":["ON Semiconductor, South Portland, ME, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, South Portland, ME, USA","institution_ids":["https://openalex.org/I100625452"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069524332","display_name":"Michael J. Cook","orcid":"https://orcid.org/0000-0001-6410-742X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Michael Cook","raw_affiliation_strings":["ON Semiconductors, East Greenwich, RI"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductors, East Greenwich, RI","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110557600","display_name":"Chris Kendrick","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chris Kendrick","raw_affiliation_strings":["ON Semiconductors, East Greenwich, RI"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductors, East Greenwich, RI","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103513422","display_name":"S.A. Suliman","orcid":null},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Samia A. Suliman","raw_affiliation_strings":["Department of Engineering Sciences and Mechanics, Pennsylvania State University, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Engineering Sciences and Mechanics, Pennsylvania State University, USA","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039245307","display_name":"Gavin D. R. Hall","orcid":"https://orcid.org/0000-0002-7048-9310"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Gavin D.R. Hall","raw_affiliation_strings":["ON Semiconductor, Gresham, OR, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, Gresham, OR, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110255796","display_name":"Tom Kopley","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tom Kopley","raw_affiliation_strings":["ON Semiconductor, Sunnyvale, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ON Semiconductor, Sunnyvale, CA, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032175829","display_name":"Osama O. Awadelkarim","orcid":"https://orcid.org/0000-0002-7683-5413"},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Osama O. Awadelkarim","raw_affiliation_strings":["Department of Engineering Sciences and Mechanics, Pennsylvania State University, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Engineering Sciences and Mechanics, Pennsylvania State University, USA","institution_ids":["https://openalex.org/I130769515"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.2939,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.95778536,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.8210588097572327},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8126351237297058},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.7878578901290894},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.5821084976196289},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.5698273777961731},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5106695294380188},{"id":"https://openalex.org/keywords/temperature-measurement","display_name":"Temperature measurement","score":0.49843263626098633},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.4924691617488861},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.461173415184021},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3671377897262573},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.32663819193840027},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.0838070809841156},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07173705101013184},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.06717339158058167}],"concepts":[{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.8210588097572327},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8126351237297058},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.7878578901290894},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.5821084976196289},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.5698273777961731},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5106695294380188},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.49843263626098633},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.4924691617488861},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.461173415184021},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3671377897262573},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.32663819193840027},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0838070809841156},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07173705101013184},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.06717339158058167},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps45951.2020.9128318","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps45951.2020.9128318","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1490777072","https://openalex.org/W1988511738","https://openalex.org/W2028735736","https://openalex.org/W2080807928","https://openalex.org/W2086103622","https://openalex.org/W2091749383","https://openalex.org/W2159537490","https://openalex.org/W2397694479","https://openalex.org/W2499844158","https://openalex.org/W2780706692","https://openalex.org/W2790374843","https://openalex.org/W2799570083","https://openalex.org/W2892999292","https://openalex.org/W2901909633","https://openalex.org/W2962792620","https://openalex.org/W2964131534","https://openalex.org/W2984175522","https://openalex.org/W4285719527","https://openalex.org/W6647286597","https://openalex.org/W6657843323"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W2942040471","https://openalex.org/W2088008649","https://openalex.org/W2166033074","https://openalex.org/W2036808971","https://openalex.org/W2573726612","https://openalex.org/W2028220610","https://openalex.org/W2072660350","https://openalex.org/W2245347530","https://openalex.org/W1549593594"],"abstract_inverted_index":{"Bias":[0],"Temperature":[1],"Instability":[2],"(BTI)":[3],"measurements":[4],"were":[5,24],"performed":[6],"on":[7,17],"SiC":[8],"n-channel":[9],"DMOSFETs.":[10],"The":[11,31,62],"effects":[12],"of":[13,21],"the":[14,18,22,36,86],"BTI":[15],"stress":[16,88],"electrical":[19],"characteristics":[20],"device":[23],"studied":[25],"using":[26],"slow":[27,32],"and":[28],"fast":[29,63],"measurements.":[30],"Measurements":[33],"show":[34],"that":[35,91],"change":[37],"in":[38],"threshold":[39],"voltage":[40],"(Vth)":[41],"can":[42],"be":[43,60],"attributed":[44],"to":[45,59,80],"charge":[46,55],"carrier":[47],"trapping/de-trapping":[48],"at":[49],"border":[50],"traps,":[51],"while":[52],"interface":[53],"trapped":[54],"density":[56],"is":[57,78,94],"found":[58],"unaffected.":[61],"measurements,":[64],"however,":[65],"shows":[66],"significant":[67],"Vth":[68,76,92],"recovery":[69,93],"taking":[70],"place":[71],"in-situ":[72],"during":[73],"measurement.":[74],"Moreover,":[75],"shift":[77],"observed":[79],"decrease":[81],"with":[82],"increasing":[83],"temperature":[84,95],"for":[85],"same":[87],"level":[89],"suggesting":[90],"activated.":[96]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":5}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}