{"id":"https://openalex.org/W2946123700","doi":"https://doi.org/10.1109/irps.2019.8720591","title":"Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology","display_name":"Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946123700","doi":"https://doi.org/10.1109/irps.2019.8720591","mag":"2946123700"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720591","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720591","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016922409","display_name":"Anh-Huy Nguyen","orcid":null},"institutions":[{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]},{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"A.P. Nguyen","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https://openalex.org/I4210150049","https://openalex.org/I2738703131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082063555","display_name":"X. Garros","orcid":"https://orcid.org/0000-0002-1061-9515"},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"X. Garros","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https://openalex.org/I4210150049","https://openalex.org/I2738703131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111881717","display_name":"M. Rafik","orcid":"https://orcid.org/0009-0000-6342-7667"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"M. Rafik","raw_affiliation_strings":["ST Microelectronics, France"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063370961","display_name":"F. Cacho","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"F. Cacho","raw_affiliation_strings":["ST Microelectronics, France"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113211895","display_name":"D. Roy","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"D. Roy","raw_affiliation_strings":["ST Microelectronics, France"],"affiliations":[{"raw_affiliation_string":"ST Microelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087103079","display_name":"X. Federspiel","orcid":null},"institutions":[{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]},{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"X. Federspiel","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https://openalex.org/I4210150049","https://openalex.org/I2738703131"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108682210","display_name":"F. Gaillard","orcid":null},"institutions":[{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]},{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"F. Gaillard","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https://openalex.org/I4210150049","https://openalex.org/I2738703131"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5016922409"],"corresponding_institution_ids":["https://openalex.org/I2738703131","https://openalex.org/I4210150049"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.035733,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3989242911338806},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3979208171367645},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3614453077316284},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.34001338481903076},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18226158618927002}],"concepts":[{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3989242911338806},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3979208171367645},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3614453077316284},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.34001338481903076},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18226158618927002}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps.2019.8720591","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720591","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:cea-04797665v1","is_oa":false,"landing_page_url":"https://cea.hal.science/cea-04797665","pdf_url":null,"source":{"id":"https://openalex.org/S4406922461","display_name":"SPIRE - Sciences Po Institutional REpository","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.1-5, ⟨10.1109/IRPS.2019.8720591⟩","raw_type":"Conference papers"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2102434753","https://openalex.org/W2136122966","https://openalex.org/W2148748564","https://openalex.org/W2532934857","https://openalex.org/W2608285642","https://openalex.org/W4246646883"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036","https://openalex.org/W3148032049"],"abstract_inverted_index":{"The":[0],"impact":[1],"of":[2,27,54,65,71,79,103],"integrated":[3],"gate":[4,66],"impedances,":[5],"passive":[6],"(polycomb,":[7],"R":[8,40,80],"G":[11,43,83],")":[12],"and":[13,44,101],"active":[14],"(Input/Output":[15],"MOSfet,":[16],"Z":[17,45,85],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">load":[20,48,88],"),":[21],"on":[22],"the":[23,51,55,59,93,98],"breakdown":[24],"(BD)":[25],"behaviors":[26],"28nm":[28],"Fully-Depleted":[29],"Silicon-On-Insulator":[30],"(FDSOI)":[31],"transistors":[32],"is":[33],"discussed.":[34],"It":[35],"has":[36],"been":[37],"shown":[38],"that":[39],"affect":[49],"directly":[50],"BD":[52,60,99],"hardness":[53,100],"devices.":[56],"By":[57],"reducing":[58],"hardness,":[61],"a":[62],"catastrophic":[63],"failure":[64],"dielectric":[67],"meaning":[68],"complete":[69],"loss":[70],"device":[72],"functionalities":[73,102],"can":[74],"be":[75],"avoided.":[76],"Many":[77],"configurations":[78],",":[84],"are":[89],"considered":[90],"to":[91],"obtain":[92],"best":[94],"compromise":[95],"in":[96],"terms":[97],"Device":[104],"Under":[105],"Test":[106],"(DUT).":[107]},"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}