{"id":"https://openalex.org/W2946231078","doi":"https://doi.org/10.1109/irps.2019.8720578","title":"Gaining Confidence - A Review of Silicon Carbide's Reliability Status","display_name":"Gaining Confidence - A Review of Silicon Carbide's Reliability Status","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946231078","doi":"https://doi.org/10.1109/irps.2019.8720578","mag":"2946231078"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720578","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720578","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"review","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057054314","display_name":"Nando Kaminski","orcid":"https://orcid.org/0000-0002-3616-0642"},"institutions":[{"id":"https://openalex.org/I180437899","display_name":"University of Bremen","ror":"https://ror.org/04ers2y35","country_code":"DE","type":"education","lineage":["https://openalex.org/I180437899"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Nando Kaminski","raw_affiliation_strings":["University of Bremen, Institute for Electrical Drives, Power Electronics and Devices (IALB), Bremen, Germany"],"affiliations":[{"raw_affiliation_string":"University of Bremen, Institute for Electrical Drives, Power Electronics and Devices (IALB), Bremen, Germany","institution_ids":["https://openalex.org/I180437899"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055256555","display_name":"Sarah Rugen","orcid":"https://orcid.org/0000-0002-8466-5290"},"institutions":[{"id":"https://openalex.org/I180437899","display_name":"University of Bremen","ror":"https://ror.org/04ers2y35","country_code":"DE","type":"education","lineage":["https://openalex.org/I180437899"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Sarah Rugen","raw_affiliation_strings":["University of Bremen, Institute for Electrical Drives, Power Electronics and Devices (IALB), Bremen, Germany"],"affiliations":[{"raw_affiliation_string":"University of Bremen, Institute for Electrical Drives, Power Electronics and Devices (IALB), Bremen, Germany","institution_ids":["https://openalex.org/I180437899"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024294344","display_name":"Felix Hoffmann","orcid":"https://orcid.org/0000-0003-4637-6284"},"institutions":[{"id":"https://openalex.org/I180437899","display_name":"University of Bremen","ror":"https://ror.org/04ers2y35","country_code":"DE","type":"education","lineage":["https://openalex.org/I180437899"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Felix Hoffmann","raw_affiliation_strings":["University of Bremen, Institute for Electrical Drives, Power Electronics and Devices (IALB), Bremen, Germany"],"affiliations":[{"raw_affiliation_string":"University of Bremen, Institute for Electrical Drives, Power Electronics and Devices (IALB), Bremen, Germany","institution_ids":["https://openalex.org/I180437899"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5057054314"],"corresponding_institution_ids":["https://openalex.org/I180437899"],"apc_list":null,"apc_paid":null,"fwci":1.3115,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.80749997,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9919999837875366,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.8154101371765137},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.7846677899360657},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.7753904461860657},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5598214864730835},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.525702714920044},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.456442654132843},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4122884273529053},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3555828034877777},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3555395305156708},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19575798511505127},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.12034255266189575},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.11978316307067871}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.8154101371765137},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7846677899360657},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.7753904461860657},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5598214864730835},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.525702714920044},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.456442654132843},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4122884273529053},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3555828034877777},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3555395305156708},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19575798511505127},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.12034255266189575},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.11978316307067871},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720578","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720578","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":33,"referenced_works":["https://openalex.org/W1559590138","https://openalex.org/W2012523191","https://openalex.org/W2048463055","https://openalex.org/W2049969900","https://openalex.org/W2105557297","https://openalex.org/W2287985234","https://openalex.org/W2320070095","https://openalex.org/W2550484295","https://openalex.org/W2593954620","https://openalex.org/W2611334169","https://openalex.org/W2620793302","https://openalex.org/W2620905406","https://openalex.org/W2621099536","https://openalex.org/W2737101607","https://openalex.org/W2800118972","https://openalex.org/W2800140244","https://openalex.org/W2808643180","https://openalex.org/W2809768744","https://openalex.org/W2809986634","https://openalex.org/W2810030388","https://openalex.org/W2810031807","https://openalex.org/W2810869399","https://openalex.org/W2899070267","https://openalex.org/W2903945488","https://openalex.org/W2906361883","https://openalex.org/W3138865586","https://openalex.org/W3154500398","https://openalex.org/W3183307288","https://openalex.org/W6675977509","https://openalex.org/W6729559499","https://openalex.org/W6792041561","https://openalex.org/W6793448144","https://openalex.org/W6798346622"],"related_works":["https://openalex.org/W1815542355","https://openalex.org/W4289655666","https://openalex.org/W2152540334","https://openalex.org/W1991904898","https://openalex.org/W2348171720","https://openalex.org/W2360594331","https://openalex.org/W2374650426","https://openalex.org/W2371787976","https://openalex.org/W2359257129","https://openalex.org/W2352135202"],"abstract_inverted_index":{"Silicon":[0],"carbide":[1],"has":[2],"the":[3,39,108,121,128],"potential":[4],"to":[5,54,71,89,119,145],"replace":[6],"silicon":[7],"in":[8],"a":[9,21,30,72,138],"large":[10],"spectrum":[11],"of":[12,32,41,61],"applications.":[13],"To":[14],"do":[15],"so,":[16],"SiC":[17,42,67,94],"needs":[18],"superior":[19],"performance,":[20],"reasonable":[22],"price":[23],"and":[24,34,58],"good":[25],"reliability.":[26],"However,":[27],"there":[28,136],"are":[29,78,103],"couple":[31],"properties":[33],"effects,":[35],"which":[36,75],"could":[37],"compromise":[38],"reliability":[40,83],"devices.":[43],"Namely,":[44],"power":[45],"cycling":[46],"capability,":[47],"high":[48],"temperature":[49],"operation,":[50],"bipolar":[51],"degradation,":[52],"susceptibility":[53],"humidity":[55],"under":[56],"operation":[57],"all":[59],"kinds":[60],"MOS-issues":[62],"require":[63],"special":[64],"attention.":[65],"After":[66],"devices":[68,95],"have":[69,144],"matured":[70],"level":[73],"at":[74,132],"standard":[76],"applications":[77],"no":[79],"longer":[80],"affected":[81],"by":[82],"issues,":[84],"it":[85,116],"is":[86,112,117,137],"now":[87],"time":[88],"find":[90,120],"out":[91],"how":[92],"far":[93],"can":[96,125,131],"be":[97],"pushed":[98],"or":[99,130],"what":[100],"safety":[101],"margin":[102],"required.":[104],"As":[105],"testing":[106],"for":[107],"entire":[109],"useful":[110],"life":[111],"not":[113],"an":[114],"option,":[115],"essential":[118],"right":[122],"tests":[123,143],"that":[124],"precisely":[126],"quantify":[127],"degradation":[129],"least":[133],"indicate":[134],"if":[135],"possible":[139],"risk.":[140],"Finally,":[141],"these":[142],"become":[146],"internationally":[147],"recognized":[148],"standards.":[149]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":4},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}