{"id":"https://openalex.org/W2945413205","doi":"https://doi.org/10.1109/irps.2019.8720567","title":"BTI Characterization of MBE Si-Capped Ge Gate Stack and Defect Reduction via Forming Gas Annealing","display_name":"BTI Characterization of MBE Si-Capped Ge Gate Stack and Defect Reduction via Forming Gas Annealing","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2945413205","doi":"https://doi.org/10.1109/irps.2019.8720567","mag":"2945413205"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720567","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720567","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086210186","display_name":"Hsien-Wen Wan","orcid":"https://orcid.org/0000-0002-7896-5844"},"institutions":[{"id":"https://openalex.org/I16733864","display_name":"National Taiwan University","ror":"https://ror.org/05bqach95","country_code":"TW","type":"education","lineage":["https://openalex.org/I16733864"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"H. W. Wan","raw_affiliation_strings":["Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan"],"affiliations":[{"raw_affiliation_string":"Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan","institution_ids":["https://openalex.org/I16733864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110613760","display_name":"Y. J. Hong","orcid":null},"institutions":[{"id":"https://openalex.org/I16733864","display_name":"National Taiwan University","ror":"https://ror.org/05bqach95","country_code":"TW","type":"education","lineage":["https://openalex.org/I16733864"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y. J. Hong","raw_affiliation_strings":["Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan"],"affiliations":[{"raw_affiliation_string":"Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan","institution_ids":["https://openalex.org/I16733864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101523909","display_name":"Yi-Ting Cheng","orcid":"https://orcid.org/0000-0002-2525-0749"},"institutions":[{"id":"https://openalex.org/I16733864","display_name":"National Taiwan University","ror":"https://ror.org/05bqach95","country_code":"TW","type":"education","lineage":["https://openalex.org/I16733864"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y. T. Cheng","raw_affiliation_strings":["Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan"],"affiliations":[{"raw_affiliation_string":"Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan","institution_ids":["https://openalex.org/I16733864"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037419608","display_name":"M. Hong","orcid":"https://orcid.org/0000-0003-4657-0933"},"institutions":[{"id":"https://openalex.org/I16733864","display_name":"National Taiwan University","ror":"https://ror.org/05bqach95","country_code":"TW","type":"education","lineage":["https://openalex.org/I16733864"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"M. Hong","raw_affiliation_strings":["Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan"],"affiliations":[{"raw_affiliation_string":"Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei, Taiwan","institution_ids":["https://openalex.org/I16733864"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5086210186"],"corresponding_institution_ids":["https://openalex.org/I16733864"],"apc_list":null,"apc_paid":null,"fwci":0.7154,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.70982365,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"104","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.6840224862098694},{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.5407763123512268},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5395755767822266},{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"Molecular beam epitaxy","score":0.5254862904548645},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.51219242811203},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.49192333221435547},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.4475100636482239},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.4351503252983093},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.38417524099349976},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.3297708332538605},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2889202833175659},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.23693376779556274},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.23541104793548584},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.19984284043312073},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.18583694100379944},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.13648748397827148},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.08129614591598511},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.07640063762664795},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07520705461502075},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.07172974944114685}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6840224862098694},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.5407763123512268},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5395755767822266},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.5254862904548645},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.51219242811203},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.49192333221435547},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4475100636482239},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.4351503252983093},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38417524099349976},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.3297708332538605},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2889202833175659},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.23693376779556274},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23541104793548584},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.19984284043312073},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18583694100379944},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.13648748397827148},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.08129614591598511},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.07640063762664795},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07520705461502075},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.07172974944114685},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720567","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720567","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1622620000","https://openalex.org/W1918891266","https://openalex.org/W1969690515","https://openalex.org/W2024750983","https://openalex.org/W2043044116","https://openalex.org/W2061839621","https://openalex.org/W2080863887","https://openalex.org/W2122875263","https://openalex.org/W2187023566","https://openalex.org/W2279734826","https://openalex.org/W2527326504","https://openalex.org/W2609246042","https://openalex.org/W2620968081","https://openalex.org/W2691130311","https://openalex.org/W2743277724","https://openalex.org/W2755788240","https://openalex.org/W2898764218","https://openalex.org/W4230190493","https://openalex.org/W6628932908","https://openalex.org/W6660790269","https://openalex.org/W6727732268"],"related_works":["https://openalex.org/W2084196976","https://openalex.org/W2073644107","https://openalex.org/W2796938634","https://openalex.org/W2537324489","https://openalex.org/W2128190787","https://openalex.org/W1553039458","https://openalex.org/W2064786169","https://openalex.org/W1592275724","https://openalex.org/W2020270409","https://openalex.org/W2329112365"],"abstract_inverted_index":{"The":[0],"capacitance-voltage":[1],"(C-V)":[2],"hystereses":[3,117],"under":[4,122],"positive":[5],"and":[6,25,28,118],"negative":[7],"stress":[8,124],"fields":[9,83],"were":[10],"studied":[11],"on":[12,139],"molecular":[13],"beam":[14],"epitaxy":[15],"(MBE)":[16],"Si-capped":[17,135],"Ge":[18,136],"metal-oxide-semiconductor":[19],"(MOS)":[20],"capacitors":[21],"to":[22],"investigate":[23],"pre-existing":[24],"generated":[26],"shallow":[27],"deep":[29],"oxide":[30,42,82],"traps.":[31],"Post":[32],"metallization":[33],"forming":[34],"gas":[35],"annealing":[36],"(FGA)":[37],"has":[38],"reduced":[39],"the":[40,59,100,106,110,114,119,129,133],"effective":[41,81],"trap":[43],"density":[44],"(\u0394N":[45],"<sub":[46,67,85],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[47,68,72,76,86],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">eff</sub>":[48,69],")":[49,78,88],"of":[50,53,62,89,102,132],"one":[51,60],"order":[52],"magnitude,":[54],"achieving":[55],"values":[56],"lower":[57],"than":[58,93],"required":[61],"sufficient":[63],"reliability":[64,131],"(target":[65],"\u0394N":[66],"~3\u00d710":[70],"<sup":[71,75],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">10</sup>":[73],"cm":[74],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-2</sup>":[77],"at":[79,94],"an":[80],"(E":[84],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ox</sub>":[87],"~10MV/cm":[90],"(i.e.,":[91],"larger":[92],"operating":[95],"condition).":[96],"This":[97],"result":[98],"demonstrates":[99],"effectiveness":[101],"FGA":[103],"in":[104,109],"reducing":[105],"hole":[107],"traps":[108],"gate":[111,137],"stack.":[112],"Furthermore,":[113],"measured":[115],"C-V":[116],"stress-induced-leakage-current":[120],"(SILC)":[121],"long-time":[123],"remained":[125],"extremely":[126],"small,":[127],"showing":[128],"superior":[130],"MBE":[134],"stacks":[138],"Ge.":[140]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2019,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}