{"id":"https://openalex.org/W2944998363","doi":"https://doi.org/10.1109/irps.2019.8720564","title":"Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process","display_name":"Investigating the Aging Dynamics of Diode-Connected MOS Devices Using an Array-Based Characterization Vehicle in a 65nm Process","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2944998363","doi":"https://doi.org/10.1109/irps.2019.8720564","mag":"2944998363"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720564","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720564","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057468474","display_name":"Nakul Pande","orcid":"https://orcid.org/0000-0002-1753-0812"},"institutions":[{"id":"https://openalex.org/I130238516","display_name":"University of Minnesota","ror":"https://ror.org/017zqws13","country_code":"US","type":"education","lineage":["https://openalex.org/I130238516"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Nakul Pande","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA","institution_ids":["https://openalex.org/I130238516"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009547029","display_name":"Gyusung Park","orcid":null},"institutions":[{"id":"https://openalex.org/I130238516","display_name":"University of Minnesota","ror":"https://ror.org/017zqws13","country_code":"US","type":"education","lineage":["https://openalex.org/I130238516"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Gyusung Park","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA","institution_ids":["https://openalex.org/I130238516"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043025421","display_name":"Chris H. Kim","orcid":"https://orcid.org/0000-0002-4194-1347"},"institutions":[{"id":"https://openalex.org/I130238516","display_name":"University of Minnesota","ror":"https://ror.org/017zqws13","country_code":"US","type":"education","lineage":["https://openalex.org/I130238516"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chris H. Kim","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA","institution_ids":["https://openalex.org/I130238516"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032818658","display_name":"S. Krishnan","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Srikanth Krishnan","raw_affiliation_strings":["Texas Instruments, Dallas, TX"],"affiliations":[{"raw_affiliation_string":"Texas Instruments, Dallas, TX","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050326051","display_name":"Vijay Reddy","orcid":"https://orcid.org/0000-0002-0687-672X"},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vijay Reddy","raw_affiliation_strings":["Texas Instruments, Dallas, TX"],"affiliations":[{"raw_affiliation_string":"Texas Instruments, Dallas, TX","institution_ids":["https://openalex.org/I74760111"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5057468474"],"corresponding_institution_ids":["https://openalex.org/I130238516"],"apc_list":null,"apc_paid":null,"fwci":0.2385,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.53458809,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.612610936164856},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5627588033676147},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5271610617637634},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.4997236728668213},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.49746373295783997},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4767797291278839},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.46275967359542847},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.43810731172561646},{"id":"https://openalex.org/keywords/feedback-loop","display_name":"Feedback loop","score":0.41238224506378174},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3722366392612457},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25881344079971313},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2439490556716919},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.223781019449234},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.15406787395477295}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.612610936164856},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5627588033676147},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5271610617637634},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.4997236728668213},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.49746373295783997},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4767797291278839},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.46275967359542847},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.43810731172561646},{"id":"https://openalex.org/C186886427","wikidata":"https://www.wikidata.org/wiki/Q5441213","display_name":"Feedback loop","level":2,"score":0.41238224506378174},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3722366392612457},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25881344079971313},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2439490556716919},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.223781019449234},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.15406787395477295},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720564","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720564","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5899999737739563}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1522481364","https://openalex.org/W1999806435","https://openalex.org/W2014390999","https://openalex.org/W2031517912","https://openalex.org/W2092120699","https://openalex.org/W2290288937","https://openalex.org/W2800470148","https://openalex.org/W2806078078"],"related_works":["https://openalex.org/W3107994849","https://openalex.org/W4247143848","https://openalex.org/W2009883749","https://openalex.org/W2735573198","https://openalex.org/W29442446","https://openalex.org/W330727063","https://openalex.org/W2896904446","https://openalex.org/W1483407203","https://openalex.org/W4206825956","https://openalex.org/W651098627"],"abstract_inverted_index":{"This":[0],"work":[1],"presents":[2],"measured":[3],"test-data":[4],"corresponding":[5],"to":[6,71,101],"a":[7,44],"comprehensive":[8],"reliability":[9],"characterization":[10],"of":[11,23,27,37,62,80,96],"diode-connected":[12],"MOS":[13],"transistors.":[14],"An":[15],"array-based":[16],"test":[17],"structure,":[18],"with":[19,89],"the":[20,25,30,34,55,60,65,72,78,90,94,102],"specific":[21],"aim":[22],"quantifying":[24],"impact":[26,61],"feedback":[28,63],"on":[29,64,93],"aging":[31,66],"dynamics":[32],"for":[33,83],"circuit":[35],"configuration":[36],"interest":[38],"was":[39],"designed":[40],"and":[41,68],"implemented":[42],"in":[43,86],"65nm":[45],"Low-Power":[46],"(LP)":[47],"process.":[48],"Through":[49],"detailed":[50],"measurement":[51],"data":[52],"obtained":[53],"using":[54],"test-vehicle":[56],"we,":[57],"(1)":[58],"characterize":[59],"rate":[67],"compare":[69],"it":[70],"no-feedback":[73],"case":[74,103],"&":[75],"(2)":[76],"evaluate":[77],"efficacy":[79],"iterative":[81],"simulations":[82],"lifetime":[84],"projection":[85],"such":[87],"scenarios":[88],"method":[91],"based":[92],"universality":[95],"hot":[97],"carrier":[98],"degradation":[99],"extended":[100],"featuring":[104],"feedback.":[105]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}