{"id":"https://openalex.org/W2946274599","doi":"https://doi.org/10.1109/irps.2019.8720560","title":"Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT)","display_name":"Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT)","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946274599","doi":"https://doi.org/10.1109/irps.2019.8720560","mag":"2946274599"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720560","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720560","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102883597","display_name":"Kenichiro Tanaka","orcid":"https://orcid.org/0000-0003-0960-8218"},"institutions":[{"id":"https://openalex.org/I1283155146","display_name":"Panasonic (Japan)","ror":"https://ror.org/011tm7n37","country_code":"JP","type":"company","lineage":["https://openalex.org/I1283155146"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Kenichiro Tanaka","raw_affiliation_strings":["Automotive and Industrial Systems Company, Panasonic Corporation, 3-1-1, Yagumo-naka-machi, Moriguchi City, Osaka, 570-8501, Japan","Automotive and Industrial Systems Company, Panasonic Corporation, Moriguchi City, Osaka, Japan"],"affiliations":[{"raw_affiliation_string":"Automotive and Industrial Systems Company, Panasonic Corporation, 3-1-1, Yagumo-naka-machi, Moriguchi City, Osaka, 570-8501, Japan","institution_ids":["https://openalex.org/I1283155146"]},{"raw_affiliation_string":"Automotive and Industrial Systems Company, Panasonic Corporation, Moriguchi City, Osaka, Japan","institution_ids":["https://openalex.org/I1283155146"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075080259","display_name":"Masahiro Hikita","orcid":null},"institutions":[{"id":"https://openalex.org/I1283155146","display_name":"Panasonic (Japan)","ror":"https://ror.org/011tm7n37","country_code":"JP","type":"company","lineage":["https://openalex.org/I1283155146"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masahiro Hikita","raw_affiliation_strings":["Automotive and Industrial Systems Company, Panasonic Corporation, 3-1-1, Yagumo-naka-machi, Moriguchi City, Osaka, 570-8501, Japan","Automotive and Industrial Systems Company, Panasonic Corporation, Moriguchi City, Osaka, Japan"],"affiliations":[{"raw_affiliation_string":"Automotive and Industrial Systems Company, Panasonic Corporation, 3-1-1, Yagumo-naka-machi, Moriguchi City, Osaka, 570-8501, Japan","institution_ids":["https://openalex.org/I1283155146"]},{"raw_affiliation_string":"Automotive and Industrial Systems Company, Panasonic Corporation, Moriguchi City, Osaka, Japan","institution_ids":["https://openalex.org/I1283155146"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077565266","display_name":"Tetsuzo Ueda","orcid":"https://orcid.org/0000-0003-3615-4354"},"institutions":[{"id":"https://openalex.org/I1283155146","display_name":"Panasonic (Japan)","ror":"https://ror.org/011tm7n37","country_code":"JP","type":"company","lineage":["https://openalex.org/I1283155146"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tetsuzo Ueda","raw_affiliation_strings":["Automotive and Industrial Systems Company, Panasonic Corporation, 3-1-1, Yagumo-naka-machi, Moriguchi City, Osaka, 570-8501, Japan","Automotive and Industrial Systems Company, Panasonic Corporation, Moriguchi City, Osaka, Japan"],"affiliations":[{"raw_affiliation_string":"Automotive and Industrial Systems Company, Panasonic Corporation, 3-1-1, Yagumo-naka-machi, Moriguchi City, Osaka, 570-8501, Japan","institution_ids":["https://openalex.org/I1283155146"]},{"raw_affiliation_string":"Automotive and Industrial Systems Company, Panasonic Corporation, Moriguchi City, Osaka, Japan","institution_ids":["https://openalex.org/I1283155146"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5102883597"],"corresponding_institution_ids":["https://openalex.org/I1283155146"],"apc_list":null,"apc_paid":null,"fwci":0.6925,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.69048437,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.7628742456436157},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6598744988441467},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6501432657241821},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6258928775787354},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.584758460521698},{"id":"https://openalex.org/keywords/trap","display_name":"Trap (plumbing)","score":0.5479117631912231},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.4850234389305115},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.42727139592170715},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.41809120774269104},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3277962803840637},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1516910195350647},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07929250597953796}],"concepts":[{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.7628742456436157},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6598744988441467},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6501432657241821},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6258928775787354},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.584758460521698},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.5479117631912231},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.4850234389305115},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.42727139592170715},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.41809120774269104},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3277962803840637},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1516910195350647},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07929250597953796},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/irps.2019.8720560","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720560","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6600000262260437,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2507800947","https://openalex.org/W4240235572"],"related_works":["https://openalex.org/W2199813689","https://openalex.org/W4252447916","https://openalex.org/W2369033613","https://openalex.org/W2511880725","https://openalex.org/W2390226751","https://openalex.org/W2904116937","https://openalex.org/W2592098988","https://openalex.org/W1849638103","https://openalex.org/W2588941787","https://openalex.org/W2071775671"],"abstract_inverted_index":{"Anomalous":[0],"turn":[1],"off":[2],"(ATO)":[3],"is":[4,28,63,77,87,105,109],"observed":[5,30],"for":[6,31,79],"the":[7,24,32,48,80,83,92,95,103,112,121],"GaN-based":[8],"normally-off":[9],"Gate":[10],"injection":[11],"Transistor":[12],"(GIT)":[13],"with":[14,34],"a":[15,35,73],"threshold":[16,36,52],"voltage":[17,37],"having":[18],"smaller":[19],"than":[20,39,65],"0.7":[21,40,66],"V.":[22,41,67],"On":[23],"other":[25],"hand,":[26],"ATO":[27],"not":[29],"GIT":[33],"larger":[38,64],"The":[42],"commercialized":[43],"GITs":[44],"are":[45,54,100],"free":[46],"from":[47],"ATO,":[49,81],"because":[50,82],"their":[51],"voltages":[53],"controlled":[55],"to":[56,90],"be":[57],"1.":[58],"2":[59],"\u00b10.":[60],"3V,":[61],"which":[62],"Device":[68],"simulation":[69],"study":[70],"indicates":[71],"that":[72,99,111],"donor-type":[74,114],"hole":[75,97,115],"trap":[76],"responsible":[78],"internal":[84],"electric":[85],"field":[86],"large":[88],"enough":[89],"induce":[91],"emission":[93],"of":[94],"captured":[96],"traps":[98,116],"made":[101],"when":[102],"device":[104],"turned":[106],"off.":[107],"It":[108],"simulated":[110],"specified":[113],"influence":[117],"minor":[118],"effects":[119],"on":[120],"switching":[122],"behavior.":[123]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}