{"id":"https://openalex.org/W2946096414","doi":"https://doi.org/10.1109/irps.2019.8720549","title":"$\\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate","display_name":"$\\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2946096414","doi":"https://doi.org/10.1109/irps.2019.8720549","mag":"2946096414"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720549","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720549","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019656768","display_name":"E. Canato","orcid":null},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"E. Canato","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042867287","display_name":"F. Masin","orcid":"https://orcid.org/0000-0002-6947-1797"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"F. Masin","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041018780","display_name":"Matteo Borga","orcid":"https://orcid.org/0000-0003-3087-6612"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Borga","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002653396","display_name":"Enrico Zanoni","orcid":"https://orcid.org/0000-0001-7349-9656"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E. Zanoni","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059611177","display_name":"Matteo Meneghini","orcid":"https://orcid.org/0000-0003-2421-505X"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Meneghini","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101587480","display_name":"Gaudenzio Meneghesso","orcid":"https://orcid.org/0000-0002-6715-4827"},"institutions":[{"id":"https://openalex.org/I138689650","display_name":"University of Padua","ror":"https://ror.org/00240q980","country_code":"IT","type":"education","lineage":["https://openalex.org/I138689650"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"G. Meneghesso","raw_affiliation_strings":["Department of Information Engineering, University of Padova, Padova, Italy"],"affiliations":[{"raw_affiliation_string":"Department of Information Engineering, University of Padova, Padova, Italy","institution_ids":["https://openalex.org/I138689650"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044446554","display_name":"A. Stockman","orcid":"https://orcid.org/0000-0002-8992-4685"},"institutions":[{"id":"https://openalex.org/I4210110772","display_name":"ON Semiconductor (Belgium)","ror":"https://ror.org/0212gej90","country_code":"BE","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210110772"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"A. Stockman","raw_affiliation_strings":["ONSemiconductor, Oudenaarde, Belgium"],"affiliations":[{"raw_affiliation_string":"ONSemiconductor, Oudenaarde, Belgium","institution_ids":["https://openalex.org/I4210110772"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101438376","display_name":"Abhishek Banerjee","orcid":"https://orcid.org/0000-0002-4121-4756"},"institutions":[{"id":"https://openalex.org/I4210110772","display_name":"ON Semiconductor (Belgium)","ror":"https://ror.org/0212gej90","country_code":"BE","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210110772"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"A. Banerjee","raw_affiliation_strings":["ONSemiconductor, Oudenaarde, Belgium"],"affiliations":[{"raw_affiliation_string":"ONSemiconductor, Oudenaarde, Belgium","institution_ids":["https://openalex.org/I4210110772"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109149924","display_name":"P. Moens","orcid":"https://orcid.org/0000-0002-7799-6905"},"institutions":[{"id":"https://openalex.org/I4210110772","display_name":"ON Semiconductor (Belgium)","ror":"https://ror.org/0212gej90","country_code":"BE","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210110772"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"P. Moens","raw_affiliation_strings":["ONSemiconductor, Oudenaarde, Belgium"],"affiliations":[{"raw_affiliation_string":"ONSemiconductor, Oudenaarde, Belgium","institution_ids":["https://openalex.org/I4210110772"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5019656768"],"corresponding_institution_ids":["https://openalex.org/I138689650"],"apc_list":null,"apc_paid":null,"fwci":2.2507,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.88033894,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.859201192855835},{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.6497342586517334},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5970124006271362},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5897398591041565},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5847265124320984},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5347790718078613},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5312834978103638},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5122630000114441},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.5085049867630005},{"id":"https://openalex.org/keywords/atmospheric-temperature-range","display_name":"Atmospheric temperature range","score":0.45514562726020813},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.44015222787857056},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2813529968261719},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2581743597984314},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.18680953979492188},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.07335573434829712},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.06902053952217102},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.06568396091461182}],"concepts":[{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.859201192855835},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.6497342586517334},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5970124006271362},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5897398591041565},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5847265124320984},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5347790718078613},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5312834978103638},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5122630000114441},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.5085049867630005},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.45514562726020813},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.44015222787857056},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2813529968261719},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2581743597984314},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18680953979492188},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.07335573434829712},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.06902053952217102},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06568396091461182},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/irps.2019.8720549","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720549","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:archive.ugent.be:8617770","is_oa":false,"landing_page_url":"http://hdl.handle.net/1854/LU-8617770","pdf_url":null,"source":{"id":"https://openalex.org/S4306400478","display_name":"Ghent University Academic Bibliography (Ghent University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I32597200","host_organization_name":"Ghent University","host_organization_lineage":["https://openalex.org/I32597200"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)","raw_type":"conference"},{"id":"pmh:oai:www.research.unipd.it:11577/3305180","is_oa":false,"landing_page_url":"http://hdl.handle.net/11577/3305180","pdf_url":null,"source":{"id":"https://openalex.org/S4306402547","display_name":"Padua Research Archive (University of Padova)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I138689650","host_organization_name":"University of Padua","host_organization_lineage":["https://openalex.org/I138689650"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.44999998807907104}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2582932297","https://openalex.org/W2587900567","https://openalex.org/W2769895692","https://openalex.org/W2800507758","https://openalex.org/W2801059624","https://openalex.org/W2808463436","https://openalex.org/W2895171972","https://openalex.org/W6733167501","https://openalex.org/W6733673033"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W2972090613","https://openalex.org/W2942040471","https://openalex.org/W2573726612","https://openalex.org/W2028220610","https://openalex.org/W2088008649","https://openalex.org/W2166033074","https://openalex.org/W2036808971","https://openalex.org/W2072660350","https://openalex.org/W1549593594"],"abstract_inverted_index":{"We":[0,51],"propose":[1],"a":[2,35,46,64,75,95,109],"technique":[3],"to":[4,42,74,82,108],"evaluate":[5,30],"the":[6,9,25,31,53,69,83,88,91],"time-dependence":[7],"of":[8,48,55,85],"threshold":[10,77,113],"voltage":[11,78],"instabilities":[12],"in":[13,34,68,112],"GaN-based":[14],"normally-off":[15],"transistors":[16],"under":[17],"positive":[18,76],"gate":[19,126],"bias.":[20],"More":[21],"specifically:":[22],"(i)":[23],"for":[24,100],"first":[26,65],"time":[27,37],"we":[28],"experimentally":[29],"Vth":[32],"shift":[33,111],"wide":[36],"window":[38],"(from":[39],"10":[40],"s":[41],"100":[43,71],"s),":[44],"as":[45],"function":[47],"temperature.":[49],"(ii)":[50],"study":[52],"existence":[54],"two":[56],"dominant":[57],"trapping":[58],"processes,":[59],"having":[60],"different":[61],"time-kinetics.":[62],"(iii)":[63],"process,":[66,97],"occurring":[67,98],"initial":[70],"s,":[72],"leading":[73,107],"shift,":[79],"and":[80,122],"ascribed":[81],"injection":[84],"electrons":[86],"from":[87],"2DEG":[89],"towards":[90],"AlGaN":[92],"barrier;":[93],"(iv)":[94],"second":[96],"only":[99],"V":[101],"<sub":[102],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[103],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">GS</sub>":[104],">5":[105],"V,":[106],"negative":[110],"voltage.":[114],"This":[115],"latter":[116],"process":[117],"is":[118],"not":[119],"thermally":[120],"activated":[121],"strongly":[123],"dependent":[124],"on":[125],"leakage.":[127]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}